TT 66 N 12 Search Results

EUPEC TT 66

Abstract: EUPEC tt 66 N 16 EUPEC TT 66 n 12 TT66N powerblock TT 66 N 16
Contextual Info: EUPEC blE V m 3 4 0 3 ^ 7 OODlObb 3QT H U P E C TT 66 N, TD 66 N, D T 6 6 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

78 mo 5

Contextual Info: G T A B LE t Ä tt* « m ra t ttS T S E A L S PART NO. PA R T NAME MATERIAL & FINISH 'S HEADER HOUSING 66- f j n ifc UL94V-0 66 NYLON GLASS FILLED CT1 : UL LEVEL2, 250~399V 7fÑ°Xh PO ST CO N TACT E: 1. «S*H8:1 0 8 - 5 4 5 9 2. mmmm» : 1. 6 t 3. y ^ a i s o v y ? •. 9 1 7 6 8 7

Contextual Info: TT W S32K32-XHX M/HITE /M IC R O E LE C TR O N IC S 32Kx32 SRAM MODULE Commercial, Industrial and M ilitary Temperature Ranges TTL Compatible Inputs and Outputs FEA T U R ES 5 Volt Power Supply • Access Times of 25nS to 120nS Low Power CMOS ■ 66 pin, PGA Type, 1.185 inch square, Hermetic Ceramic

DHO 165 DV 414

Abstract: ID500A-030 TA8250 TAE 1102 USM6J44 H-17 H-18 H-19 USM6G44
Contextual Info: - 157 — Z * TT- 1 4 1 3 - 7 E 2 A U S M 6 r G, J j 4 4 C ^ ') n 0 % £ i¡t > • 7 'U — -j-fiï 6A ( Tn = 25°C Ì I drm Id TT USM 6J44 USM 6G44 V d sm Vdrm /T i RMS) I tsm I 2-I P gm Pc,( a v > VCM ÍCM 400 6 i r r =68°C ) 60/66 (50H z/60H z, 1

CR20EY

Abstract: CM16VE CM16VG CM16VJ CN16VC CN16VE CN16VG CN16VJ EGN24-06 EGN24-08
Contextual Info: - 66 - s 35 £ tt « vrsh V CM 16 VE CM16VG CM16VJ CN16VC C N 16VE CN16VG CN16VJ EGN24-06 EGN24-08 EGN26-08 EGP26-13A EGP26-13B CRlOCY-iO CR IO C Y — 12 CR10CY-2 CR10CY-4 C RIOCY— 6 C RIOCY— 8 C R20EY— 10 C R20EY— 12 CR20EY-14 C R20EY— 16 CR20EY-2

XPS-AC

Abstract: H-17 H-18 SM6GZ47 SM6GZ47A SM6JZ47 SM6JZ47A 2-80D2A 1C33A
Contextual Info: 142 — 2 * •fl-M## TT-7 13-1OH1A SM6rG, JjZ47 C 6 A T n = 25°C) 10V//ÌS OifÊStfllit ( A C 1 5 0 0 V , {-%^9'i-f) ¡Hi) I M ) ■ « * £ * & i£ SM6GZ47 Vd = Vd r m Vtm It m = SM6JZ47 I n RMS) 6 I t s .» 60/66 P J f f * * - KI I 2 ‘t 18 PGM 5 III

Contextual Info: 15.3 8 .2 IT Ce.6 N X in N 8 .3 MAX. 0.8 *) TT TPTTRn W o - H=3—$—+ Ü ï D t CE r C3.15) FIG . CIRCUIT HO. ) 5*0.1 1 1 .5 5 * 0 .1 «1 TABLE PART HEADER 2. H O U SIN G M A T E R IA L 66^ 6 N YLON & FIN ISH CU L 9 4 V - 0 3 GLASS FILLE D fflnSb'O cty& M ait.

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

KB-362

Abstract: M8513 KB-265 KB-365 KB-369 M8513A-O HV23G MA27-C MA26W MA27-B
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

MB81C71-55

Abstract: LH5161-25 MCM6287-35 mcm6287 KHB165L-35 KM6165-45 KM6165L-25 KME165-35 M5M5187AP-25 MB81C71
Contextual Info: - 66 - 4 K X m £ ît * CC TAAC max ns) TCAC (ns) TOE max (ns) CMOS y A f- > TOH rain (ns) TOD max (ns) S t a t i c ;/ TWP min (ns) RAM ( 6 5 5 3 6 x 1 ) tt n < TDS min (ns) TDH (ns) TWD nin (ns) TWF max (ns) V D D or V C C (V) 22PIN 1DD max <mA) 6287 À

30g 123

Abstract: M8513A-0 KB-262C4 1S1212 1S1300 1S464 1S467 607D DS430 HSK23
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-362

Abstract: 1S1300 1S1212 M8513A-0 MA27B KB-362M HV23G DS430 KB-162 KB-262C4
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-362

Abstract: HV23G 1S467 KB-265 MA26W M8513A-0 KB-365 1S464 m8513a-r 1S1300
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-262C4

Abstract: 1S1212 KB-362 1S1300 KB-262 HV23G KB-265 M8513A-0 MA27-B HV123G
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

Contextual Info: i ¿ h* CO rrCh i o 8.2 9.a O cc hLü S i n tt« « * p Pp p S - ^ PA R T NO. <2> 2 PA R T NAM E M A T ER IA L & FINISH H EA D ER H O U SIN G 6 6 - i- 'f P > ^ ^ a H k U L 9 4 V - 0 66 NYLON GLASS FILLED CTI : UL LEVEL2. 250~399V 7ts°Xh PO ST CONTACT

Contextual Info: 10 a ts c o is 0 ^ -9-9- 66 - <|? § - _ < -9-9- sfc 9 9 Ln:j O O c\r 6 6 — I0 .2 MAX. 2 .5 4 MB 0 .6 w X & O CO 1. O X J\~ : I5X A D PBTP U L 9 4 V - 0 , M tT V = M M . V X X D 0 .6 3 5 : 5320 v ' J - A 2. 3. 5 34 2 - N • A’- A A A / I - T "

Contextual Info: TT WS512K32-XXX WHITE /M IC R O E L E C T R O N IC S 512Kx32 SRAM MODULE P R E L IM IN A R Y * FEATURES • A c c e s s T im e s o f 17, 20, 25, 35, 45, 5 5nS ■ P a cka g in g • 66 pin, PGA T ype, 1 .38 5 inch sq u a re , H e r m e tic C e ra m ic HIP P a ck a g e 402 , S M D N u m b e r 5 9 6 2 - 9 4 6 1 1

TD1501

Abstract: TD B6 HK 95 N pt118 t510s byv 25-1 T188F KFC7 bz plug TT 80 N 1200
Contextual Info: Outlines c ath o d e c ath o d e E-Cu-lead 25 mm E-Cu lead 25 silicon tu be red E-Cu-lead 0 5 m m ' silicon lead yellow I anode , anode - - case B T 72 h I 80 F. T 102 F, T 120 F, T 86 N, T 130 N, T 160 N, T 210 N case E 2 T 130 N, T 160 N K K ; i A ' -T-M

2N6292

Abstract: 2N3055 ta8662 2N6178 2N5781 2N5954 2N6107 2N6248 2N6372 2N6472
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. Py - 40 W max. V E R S A W ATT

RCA TO-5

Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT

2SA988

Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )

jb 5531

Abstract: 2SA915 T108 T460 2SC1940
Contextual Info: = r— ^ • 5 /— h SEC Iïf/\f7 « '> ij a h =7 > i > 7 . 9 > Silicon T ra n sisto r 2SA915 a W O Jr — T U ¿ r T > 7 <7 7') Ï ^ mm 7.0M AX. o 2SC19401 ^ > 7° >J y > ? >J T'fêffl T ê t t 0 <, S S i f E - f t o P T = 1.0 W, V GEo = -120 V ( T a =

Contextual Info: I 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 ALL RIGHTS RESERVED. D C n •j / X \, f+ + 4 - L B \T-/ #■$- A AMP 1471-9 REV 11JUN97 i_21 -OCT-98 12:53:09 amp37315 /home/amp37315/edmniod y:+\ T / j LOC DF

GP501

Abstract: GR560 standex 5mm reed switch GP100 GP560 GR501 TR100 MC 4538 "TR560" Standex Electronics
Contextual Info: M ilit a r y / # I Standex Electronics a* Con tents & # f c ? ¡a* a - 01-02 GR501 03 GP501 04 G R560 05 G P560 06 G R100 07 G P100 08 N L126 09 PR560 10 PR126 11 VR126 12 1 3 -1 4 TS501 15 TR501 16 TS560 17 TR560 18 TS100 19 TR100 20 21 22 23 23 * « * * * « «