TUNER KU BAND Search Results

ata03010

Abstract: AKD12000 ADC20010
Contextual Info: ANADIG ICS PRODUCT INDEX ♦ DBS TUNER IC ADC20010 - 950 Ku-BAND DBS DOWNCONVERTERS ♦ AKD12000- (

BAT15-090D

Abstract: tuner ku band BAT14-110D BAT15-110D bat14-110s
Contextual Info: Microwave, RF & Tuner Diodes L7^<*3- 0 ¡ For complete package outlines, refer to pages PO-1 through PO-6 Beam Lead Medium Barrier Type Frequency Band GHz BAT14-020 S BAT14-020 D BAT14-020 R BAT14-050 S BAT14-050 D BAT 14-050 R BAT14-090 S BAT 14-090 D BAT14-090 R

BAT14-115S

Abstract: BAT15-115 BAT14-115D BAT14-115 BAT14-112 BAT32 BAT14 BAT14-099R
Contextual Info: Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 through PO-6 Beam Lead Technology in Ceramic Package Medium Barrier Type Frequency M axim um Band Ratings GHz BAT 14-022 R BAT 14-025 S BAT 14-025 D BAT 14-025 R BAT 14-052 R

sanyo tv tuner volt

Abstract: LA7920
Contextual Info: Ordering num ber : EN 9 5 4 E Monolithic Linear 1C LA7920 N0.954E SA\YO TV Tuner Band Selector i X '•5- .Mà, The LA7920 is a tuner band selector IC intended for use ipi ^lectibn%^^uning\£ype TV sets. It outputs supply voltages to the tuner unit 2“inpu€ ¿¿uid

Contextual Info: SIEMENS A KTI ENGESELLS CHA F bGE D • ÛB3SbGS ÜÜ4S43Ü T73 « S I E G Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 through PO-6 RF Diodes Schottky Diodes For Professional Applications Medium Barrier Type Frequency Band

UPC1401CA

Abstract: M51307SP LA3400N LA3400 LA7212 sanyo la3400 BA7004
Contextual Info: /a w KBR Special Series Ceramic Resonators i<yoŒRa kHz Band Ceramic Resonators SPECIAL RESONATORS Application Model No. Oscillation Variable Resonant Anti-resonant Temperature Dimensions Frequency Frequency Range Impedance Impedance Characteristics page 7

Contextual Info: irdering number : EN 9 5 4 E M o n o lithic Linear IC LA7920 N0.954E TV Tuner Band Selector i The LA7920 i s a t u n e r b a n d s e l e c t o r IC in te n d e d f o r u s e i n e l e c t r o n i c tu n in g ty p e TV s e t s . I t o u tp u ts s u p p ly v o lt a g e s t o th e t u n e r u n i t a c c o r d in g t o 2 - i n p u t b a n d

Contextual Info: Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 throu gh PO-6 Beam Lead Medium Barrier Type BAT14-020 S BAT 14-020 D BAT 14-020 R BAT 14-050 S BAT 14-050 D BAT 14-050 R BAT14-090 S BAT 14-090 D BAT14-090 R BAT 14-110 S BAT14-110 D

HMF-06100

Abstract: HMF06100
Contextual Info: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates

BB204B

Contextual Info: Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 through PO-6 Varactor Tuning Diodes 1 T yp e M a x im u m Ratings VRM V BB112 BB204G BB204B BB304 CD at mA 12 32 32 32 pF 50 50 50 50 Case Characteristics (TA= 2 5 C ) CD pF

HMF06100

Abstract: "Harris microwave"
Contextual Info: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

tda 2400

Abstract: 6180X
Contextual Info: SIEMENS QPSK Demodulator for DVB TDA 6180X Overview Features • Input frequency range of 300 to 600 MHz • Automatic gain control AGC with integrated peak AGC amplifier • Output for adjustable delayed tuner AGC • Integrated low noise VCO circuitry

2SK543

Abstract: J93A W10T 1791-V4
Contextual Info: Ordering n u m b e r:E N 1 7 9 1 C 2SK543 N 0.179 IC N-Channel MOS Silicon FET SANYO i FM Tuner, VHF-Band Amp Applications Features . Low noise. NF=1.8dB typ f=100MHz . High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance, c rss =0.035pF(VDS=10V,f=1MHz)

Contextual Info: rZ J * 7Æ. S G S -T H O M S O N IWlllEM im iCTIsOTinES STV8223A1 MULTISTANDARD VIDEO AND SOUND IF SYSTEM WITH AUDIO AND VIDEO SWITCHES • VIDEO PLL DEMODULATION ■ SOUND IPLL DEMODULATION ■ NEGATIVE MODULATION ■ AGC FOR ALL STANDARDS ■ AUDIO SWITCH

la7910

Contextual Info: jrdering number : EN 920E M onolithic Linear 1C LA7910 No. 920E TV Tuner Band Selector The LA7910 i s an IC f o r t u n e r b a n d s e l e c t i o n o f e l e c t r o n i c tu n in g ty p e t e l e v i ­ s io n s e t . T h is IC i s u s e d f o r p r o d u c in g th e VHF c h a n n e l "L" b a n d p ow er s u p p ly /

varactor diode for Colpitts oscillator

Abstract: Colpitts circuit design TT 2188 transistor VCO circuit diagram frequency stability analysis colpitts oscillator colpitts oscillator 27 mhz Colpitts VCO Colpitts VCO design colpitts oscillator loop gain of Colpitts VCO design
Contextual Info: Application Note A Colpitts VCO for Wideband 0.95–2.15 GHz Set-Top TV Tuner Applications APN1006 Introduction Modern set-top DBS TV tuners require high performance, broadband voltage control oscillator (VCO) designs at a competitive cost. To meet these goals, design engineers

Contextual Info: 19-1256: Rev J; 7/97 V M /X IA 1 Dì ree t-Con version Tim er 1C fa r D ig ita l DBS A pplications The MAX2102 d irectly tunes L-band signals to base­ band using a broadband IIQ downconverter. Operating fre q u e n c y ra n g e s p a n s fro m at le a s t 9 5 0 M H z to

CR10-330J-T

Abstract: poon varactor diode capacitance measurement NE68119 reverse biasing a varactor diode TOKO Catalogue SMV1265 CR10-121J-T APN1005 x band varactor diode
Contextual Info: Application Note A Balanced Wideband VCO for Set-Top TV Tuner Applications APN1005 Introduction Modern set-top TV DBS tuner systems require more channel coverage, while maintaining competitive prices. This situation creates tough design goals: to improve performance and simplify design.

Contextual Info: T O SH IB A TC9314F-017 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9314F-01 7 SINGLE CHIP DIGITAL TUNING SYSTEM FOR CD RADIO CASSETTE TC9314F-017 is a CMOS LSI designed for a PLL frequency synthesizer radio system corresponded to the requirement

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

Mc44306

Abstract: AGC MOTOROLA GPSK modulator motorola application note amplifier GPSK motorola application note amplifier power TM04-1
Contextual Info: Order this document by MC44306/D MC44306 Advance Information Demodulator The MC44306 is an IF amplifier and mixer circuit intended for demodulation of QAM, VSB or GPSK digitally modulated signals. Great care was applied to this design to provide the best possible linearity, bandwidth.

capacitor 152j

Abstract: HF Colpitts VCO VCO circuit diagram HP8564E TOKO Catalogue TOKO Coils APN1007 varactor diode for Colpitts oscillator TOKO INDUCTORS spice CR10-101J-T
Contextual Info: Application Note Switchable Dual-Band 170/420 MHz VCO for Handset Cellular Applications APN1007 Introduction Modern multiband cellular handsets use multiple voltage control oscillator VCO functions to accommodate the many down/up conversions in the intermediate frequency

A7910

Contextual Info: Ordering number : EN 1 194C M o n olith ic Linear IC LA7911 N0.1194C TV Tuner Controller T h e L A 7911 i s a t u n e r c o n t r o l l e r IC h a v i n g s u c h f u n c t i o n s a s b a n d s w i t c h , i n v e r t e r , l o w - p a s s f i l t e r , 33V r e f e r e n c e Z e n e r .

MAXIM 1535 CE

Contextual Info: S M F -06100 ELECTRONICS Samsung M icrow ave Sem iconductor G ain O ptim ized G aAs FET 2 -2 0 GHz Description Features The SMF-06100 is a 600 xm n-channel MESFET with 0.5 urn gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and