TUNNEL DIODE 6 PIN Search Results

tunnel diode

Abstract: coaxial limiter
Contextual Info: jtà i M a n A M P c< o m p a n y Limiter Tunnel Diode Detectors 0.1 -18.0 GHz ML 7718-0000 Series V2.00 Description Typical Performance This series of limiter-detectors offers similar performance advantages to the standard tunnel diode detectors but with extended RF input pow er range. A silicon PIN

TUNNEL DIODE

Contextual Info: 10 Bit Programmable 60 dB Attenuator 0.5 GHz to 18.0 GHz 4.5 dB IL 0.06 dB Step 15 dBm P1dB TECHNICAL DATA SHEET PE70A6000 The PE70A6000 is a Non-Reflective 10 Bit Programmable 60 dB Pin Diode Attenuator with Step Resolution as Low as 0.06 dB over the Operating Frequency Range from 0.5 GHz to 18 GHz. The PE70A6000 is offered in a slim line housing measuring

TUNNEL DIODE

Contextual Info: 30 dB With 10 Bit Programmable TTL Controlled Attenuator, 2.4mm Female To 2.4mm Female, 0.03 dB Steps From 18 GHz To 40 GHz TECHNICAL DATA SHEET PE70A6001 The PE70A6001 is 10 Bit Programmable 30 dB Pin Diode Attenuator with Step Resolution as Low as 0.03 dB over the

tunnel diode

Contextual Info: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

tunnel diode

Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Contextual Info: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise

tunnel junction diode

Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.

tunnel diode high frequency

Abstract: MTD0208 MTD0208-M23 tunnel detector tunnel MTD-0218 MTD0218-M23
Contextual Info: BROADBAND TUNNEL DIODE DETECTORS metelics m CORPORATION The MTD Series of Broadband Tunnel Detectors offers high sensitivity and low VSWR. These detectors are available in several standard packages. Special packages and opposite polarities are available upon request. These are designed and m anufac­

tunnel diode high frequency

Abstract: 0818C L0218C GE "TUNNEL DIODE"
Contextual Info: MICAS00016 0* Mica Microwave’s standard detector product line includes a broad range of proven designs that ex­ tend from 5 0 0 MHz to 26.5 GHz. These detectors are offered with three different device types; tunnel, biased Schottky, and zero bias Schottky. All models

tunnel diode high frequency

Abstract: 320 5400 capacitor DATASHEET TUNNEL DIODE tunnel diode ACTM-1137 GND-Pin10 ACTM-1130NM47
Contextual Info: SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to

tunnel detector

Abstract: ACTM-1130 tunnel diode high frequency tunnel diode 6 pin Tunnel Diode ACTM1130
Contextual Info: SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to

Contextual Info: Advanced Control Components SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to

ACTM-1137

Contextual Info: SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to

H48SA

Contextual Info: FEATURES Š High efficiency: 94.2% @ 54V/ 10.2A Š Standard footprint: 58.4x61.0x11.2mm 2.30”x2.40”x0.44” (without heat spreader) 58.4x61.0x12.7mm (2.30”x2.40”x0.50”) (with heat spreader) Š Industry standard pin out Š Monotonic startup into normal and pre-bias

H48SA53010NNFH

Contextual Info: FEATURES Š High efficiency: 94.2% @ 54V/ 10.2A Š Standard footprint: 58.4x61.0x11.2mm 2.30”x2.40”x0.44” (without heat spreader) 58.4x61.0x12.7mm (2.30”x2.40”x0.50”) (with heat spreader) Š Industry standard pin out Š Monotonic startup into normal and pre-bias

back Tunnel diode

Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
Contextual Info: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,

schematic diagram of energy saving device

Abstract: scr inverter schematic circuit Power INVERTER schematic circuit circuit diagram of energy saving device dc to ac inverter by scr SCR Inverter datasheet Tunnel diode schematic diagram of power inverter SCR gate Control IC back Tunnel diode
Contextual Info: Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which do not have the same density constraints of memory devices. The basic characteristics of the EE

spice model Tunnel diode

Abstract: dpsN TUNNEL DIODE spice model
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

back Tunnel diode

Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Contextual Info: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth

DIM3R3300

Abstract: HLDP ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY back Tunnel diode TUNNEL DIODE
Contextual Info: FEATURES Š High efficiency 98% @ 48Vin, 300W Š Size: 70.6x36.8x12.7mm 2.78”x1.45”x0.5” Š Standard footprint Š Industry standard pin out Š Input OVP, UVLO, Output OCP, OVP, OTP 8W (3.3Vdc or 5.0Vdc) of isolated Š management power for module self or other

tps59610

Abstract: thermistor d503 TP218 IC TPS59124
Contextual Info: User's Guide SLUU465 – November 2010 An 8-V to 14-V Vin 2010 Atom E6xx Tunnel Creek Power System The TPS59610EVM-634 evaluation module EVM is a complete solution for the 2010 Atom™ E6xx Tunnel Creek Power System from a 12-V input bus. The EVM uses the TPS59610 for Atom CPU and

kEJ capacitor

Abstract: back Tunnel diode
Contextual Info: Inside Vantis' EE CMOS PLD Technology 'V BEYOND PERFORMANCE TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which

798v

Abstract: PICMG 3.0 vrtn back Tunnel diode bf 333 transistor DATASHEET
Contextual Info: FEATURES Š High efficiency 98% @ 48Vin, 300W Š Size: 70.6x36.8x12.7mm 2.78”x1.45”x0.5” Š Standard footprint Š Industry standard pin out Š Input OVP, UVLO, Output OCP, OVP, OTP 8W (3.3Vdc or 5.0Vdc) of isolated Š management power for module self or other