TUNNELING MAGNETORESISTANCE Search Results

Angle sensor magnetoresistance

Abstract: SB-00-024 AAT001-10E TMR Sensor AAT001 nve magnetoresistance Tunneling Magnetoresistance Position Sensors
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available

nve magnetoresistance

Abstract: AAT001-10E position sensor SB-00-024 TMR Sensor AAT001 angle position sensors
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available

Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection

Tunneling Magnetoresistance

Abstract: AAT001-10E
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection

AG930-07

Abstract: AAT001-10E
Contextual Info: AG930-07E Angle Sensor Evaluation Kit SN12425A NVE Corporation 800 467-7141 sensor-apps@nve.com www.nve.com Kit Overview Evaluation Kit Features • AAT001-10E Angle Sensor • Part # 12426 Split-Pole Alnico 5 Round Horseshoe Magnet • Unity-Gain Buffer Amplifier

gaussmeter

Abstract: Tunneling Magnetoresistance MR2A16A
Contextual Info: Technical Guide MRAM Overview Freescale’s magnetoresistive random access memory MRAM technology combines a magnetic device with standard silicon-based microelectronics to obtain the collective attributes of non-volatility, high-speed operation and unlimited read and write endurance, a

FLUXGATE

Abstract: search-coil GIANT "METAL DETECTOR" APS520 magnetodiode HS07 squid Magneto-inductive Displacement Sensors schematic inductive proximity sensor DE-710 Hall sensors Siemens
Contextual Info: A New Perspective on Magnetic Field Sensing Michael J. Caruso Tamara Bratland Honeywell, SSEC 12001 State Highway 55 Plymouth, MN 55441 Dr. Carl H. Smith Robert Schneider Nonvolatile Electronics, Inc. 11409 Valley View Road Eden Prairie, MN 55344 <www.ssec.honeywell.com>

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s

HXNV01600

Contextual Info: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day

honeywell mram

Abstract: silicon on insulator
Contextual Info: HMXNV0100 h HXNV0100 64K x 16 Non-Volatile Magnetic RAM Advanced Information The 64K x 16 radiation hardened low power nonvolatile Integrated Power Up and Power Down circuitry controls Magnetic RAM MRAM is a high performance 65,536 the condition of the device during power transitions.

HXNV0100

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

HXNV01600

Contextual Info: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness

HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

Contextual Info: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s

Keithley

Abstract: Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER NONLINEAR MODEL LDMOS keithley 192 Multimeter service manual 1016w AL 2425 dv battery charger schematic diagram apc back-UPS es 550
Contextual Info: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 www.keithley.com Visit us at www.TestEquipmentDepot.com research n nanotechnology n semiconductor n wireless n electronic components research n nanotechnology n semiconductor