TWS 434 PIN DIAGRAM Search Results

kopin

Abstract: cyberdisplay 480 x 640 cyberdisplay VGA TWS 434 cyberdisplay video dc restore kopin amlcd kopin 854 kopin 640 3.5 wVGA
Contextual Info: CyberDisplay WVGA LV Compact Low-Voltage, Wide-Format 16:9 , Color AMLCD Frameless Part No. KCD-KWCF-AA Framed Part No. KCD-KWCF-BA 1 General Description 1.1 Applications The CyberDisplay® WVGA LV is a color-filter active-ma- The ultra-compact, high-resolution CyberDisplay

TWS 434

Contextual Info: HM100510 Series- Preliminary 1,048,576-words x 1-Bit Random Access Memory • DESCRIPTION The Hitachi HM100510 is ECL 100k compatible, 1,048,576 words by 1 bit read/write random access memory developed for high speed systems. ■ FEATURES

TWS 434

Contextual Info: STI29080-90T 80-PIN FLASH MEMORY MODULES 2M X 32 Bits Flash Memory Module 5 V Only FEATURES GENERAL DESCRIPTION Access Time of 90ns The Simple Technology STI29080-90T is a 2M >: 32 bits flash m emory module. The Simple Technology STI29080-90T consists of sixteen 512K x 8 bits CMOS flash memory in 32-pin

TCP 8126

Contextual Info: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;

Contextual Info: O K I semiconductor MSM514101A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The M S M 514101A /A L is a new generation dynamic RAM organized as 4,194,304-w ord x 1 bit. The technology used to fabricate the M SM 514101A /A L is OKI's C M O S silicon gate

Contextual Info: O K I semiconductor M S M 5 1 4 1 0 1 A /A L 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1bit. The technology used to fabricate the MSM514101A/AL is OKI's CMOS silicon gate

LXD 44D3F-85

Abstract: 44D3F-45
Contextual Info: y n > jx iy n 434 D ig it C o u n te r/D e c o d e r/D riv e r _ General Description The Maxim ICM7224 LCD and ICM7225(LED) are high speed 416 digit counters, featuring segment decoders, leading zero blanking, store and reset inputs,

ATT7C314J

Contextual Info: iATsT Data Sheet November 1991 rMicroelectronics A TT7C 314J S ta tic , D u al-P o rt RAM 72K 8192 w ords x 9 b its Benefits Features • Full internal contention resolution transparent to the user ■ Word-size expansion capability ■ Parity bit available with 9-bit organization

Contextual Info: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran­ dom A cce ss M em ory designed to sup port high speed

Contextual Info: KM716V689 64Kx16 Synchronous SRAM 64K X 16-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM716V689 is a 1,048,576-bit Synchronous Static • 2 Stage Pipelined operation with 4 Burst Random • On-Chip Address Counter.

Contextual Info: STARTECH An ST78C36 ST78C36A Preliminary Information Printed November 12, 1996 Company ECP/EPP PARALLEL PRINTER PORT WITH 16 BYTE FIFO IOR* IOW* A1 A0 42 41 40 SLCT VCC BUSY 2 43 ACK* 3 ERROR* PE 4 1 TC 5 7 39 A2 8 38 PD7 D7 9 37 PD6 D6 10 36 PD5 D5 11 35

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The / j PD43 1232 L is 32,768 -w ord by 32 -bit synch rono us s ta tic RAM fa b rica te d w ith a d vanced C M O S te c h n o lo g y usin g N -channel m em ory cells.

HM538253BTT-6

Abstract: 538253B l2619
Contextual Info: HM538253B Series Preliminary 262,144-Word x 8-Btt Multiport CMOS Video RAM Rev. 0.0 Jun,k,M4 HITACHI The HM538253B is a 2 M -bit m ultiport video RA M equipped with a 256-kword x 8 -bit dynamic R A M and a 512-word x 8 -bit SA M full-sized SA M . Its RA M and SA M operate independently

ADSL Modem circuit diagram

Abstract: ADSL MODEM PROGRAMMING 100-pin dimm KMM330S104CT S5N8946
Contextual Info: S5N8946 ADSL/CABLE MODEM 4 SYSTEM MANAGER SYSTEM MANAGER OVERVIEW The S5N8946 ADSL/Cable Modem MCU ’s System Manager has the following functions. • To arbitrate system bus access requests from several master blocks, based on fixed priorities. • To provide the required memory control signals for external memory accesses. For example, if a master block

Contextual Info: OKI Semiconductor MSM7575 Multi-Function P C M C O D E C GENERAL DESCRIPTION The MSM7575, developed for advanced digital cordless telephone systems, is a single channel full duplex CODEC which performs mutual transcoding between the analog voice band signal

Contextual Info: FINAL COM’L: -15/20, Q-25 MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic ZI Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■

Contextual Info: PRELIMINARY DATA SHEET JEC CMOS INTEGRATED CIRCUIT juPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /1PD42S17405L, 4217405L are 4 194 304 words by 4 bits CMOS dynamic RAMs with optional hyper page

NS32201

Abstract: NS32201d NS32201-8 SPF 3030 NS32201-10 NS32201-D
Contextual Info: NS32201-6/N S32201- 8 /NS32201-10 Timing Control Units G eneral Description The NS32201 Timing Control Unit TCU is a 24-pin device fabricated on a Schottky bipolar process. It provides a twophase clock, system control logic and cycle extension logic for the Series 32000 microprocessor family. The TCU in­

TDA 3619

Abstract: Data sheet TDA 3619 TDA 8701 AN star delta FORWARD / REVERSE WIRING CONNECTION tda 9592 OA2222L TDA 810 amplifier sm 4109 TAG 8907 TDA audio power amplifier
Contextual Info: Revision History Based on Hard Copy . - 1’st Edition(V1.0) : April. 2003 • Chapter 1 : Introduction • Chapter 2 : DC Electrical Characteristics(Recommended Operating Conditions) • Chapter 3 : Primitive Cells • Chapter 5 : Compiled Memories STDL130

ZTM33

Abstract: shet
Contextual Info: SSI 32P4742/4742A cM Read Channel with 1,7 ENDEC, 4-burst Servo M M b n s ' A TDK Group/Company February 1996 DESCRIPTION FEATURES The SSI 3 2 P 4 7 4 2 /4 7 4 2 A de vice s are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a

scr controlled servo amplifier

Contextual Info: SSI 32P4742/4742A Read Channel with 1,7 ENDEC, 4-burst Servo m m sysb n s' A TDK Group/Company February 1996 DESCRIPTION FEATURES The SSI 32P4742/4742A devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a

TDA 3619

Abstract: TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841
Contextual Info: Revision History - 1’st Edition: October 2000 - 2’nd Edition: April 2003 • Chapter 1: Introduction • Chapter 2: DC Electrical Characteristics Recommended Operating Conditions • Chapter 3: Primitive Cells • Chapter 5: Complied Memories STDL131

TDA 9361 PS

Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device