TWZ C7 Search Results

HB66A2568A25

Abstract: HB66A2568A
Contextual Info: HB66A2568A Series 262,144-word x 8-bit High Speed Static RAM Module The HB66A2568A is a high speed 256k × 8 Static RAM module, mounted 8 pieces of 256-kbit SRAM HM6207HJP sealed in SOJ package. An outline of the HB66A2568A is 60-pin zigzag inline package. Therefore, the HB66A2568A makes

ba508

Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Contextual Info: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary

MB81C79

Abstract: mb81c79b-35
Contextual Info: October 1989 Edition 1.0 — FUJITSU D A TA S H EE T , MB81C79B-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random accasa memory

s29ws128n

Abstract: S71WS-Nx0 S29WS-N S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512ND0 S71WS-N TSD084 UtRAM Density
Contextual Info: S71WS-Nx0 Based MCPs Stacked Multi-Chip Product MCP 128/256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

AS7C31026C

Abstract: AS7C31026C-12JIN 1026B AS7C31026C-12TIN AS7C31026C-12
Contextual Info: September 2006 Advance Information AS7C31026C 3.3 V 64K X 16 CMOS SRAM Features • Industrial -40o to 85oC temperature • Organization: 65,536 words x 16 bits • Center power and ground pins for low noise • High speed - 12 ns address access time

UPD4361

Abstract: PD4361K-40
Contextual Info: NEC /¿PD4361 6 5 ,5 3 6 x 1-B IT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configurations The ;uPD4361 is a 65,536-word by 1-bit static random access memory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri­

MB81C79A

Abstract: MB81C79A-35 mb81c79 MB81C79A-45 N0-22 MB81C79A-45-W 3741B
Contextual Info: FUJITSU MICROELECTRONICS 47E D 3 7 4 T ? h 2 1 • T Ì 4 6 - 2 3 April 1990 Edition 3.0 FUjflSU DATA SHEET M B 8 1 C 79A -35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79A is a 8,192 words x 9 bits static random access memory

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

71WS512ND

Abstract: 4136P
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Distinctive Characteristics

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

P4C1026

Abstract: P4C1258
Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: NEC NEC Electronics Inc. //PD4362 16,384 X 4-BIT STATIC MIX-MOS RAM A p ril 1988 Pin Configuration Description The /L/PD4362 is a 16,384-word by 4-bit static RAM fabricated with a short-channel, siiicon-gate M ix-M O S process. Its unique circuitry, using N-channel memory

MB81C79

Contextual Info: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

cea h12

Abstract: IDT70P5258ML 5681
Contextual Info: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML Active: 450mW (typ.)

LZ23132

Abstract: H213 B 61 C7 electronic sensor twz c7 EDH1
Contextual Info: LZ23132 LZ23132 1/3 type Color CCD Area Sensor for NTSC DESCRIPTION FEATURES ● Number of pixels : 512 H x 492 (V) ● ● ● ● ● ● ● ● ● ✌✍ ✎ E ✎✎ ❑ PIN CONNECTIONS LZ23132 is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and

o12p3

Abstract: cea h12
Contextual Info: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML Active: 450mW (typ.)

O12p3

Abstract: a7p3 IDT70P5258ML cea h12
Contextual Info: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features u High-speed access u TriPort architecture allows simultaneous access to the – Industrial: 55ns max. u Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.)

O12P3

Contextual Info: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML Active: 450mW (typ.)

MB81C78A-35

Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Contextual Info: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory

70V27

Abstract: A14L IDT70V27 IDT70V27S
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM IDT70V27S/L Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.)

Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.)

IDT70V27PF

Abstract: BF144-1
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.) Low-power operation