Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BFRX-1001/H6 SINCE 1981 ● Features: ● Package Dimensions 1. Uni-directional data transmission using plastic fiber. 2. High speed signal transmission. 3. Operating voltage:4.7 to 5. 5V. 4. TTL and high speed C-MOS logic compatible.
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BFRX-1001/H6
BFRX-1001/H6
-24dBm
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BFRX-1001/H4D SINCE 1981 ● Features: ● Package Dimensions 1. Uni-directional data transmission using plastic fiber. 2. High speed signal transmission. 3. Operating voltage:4.7 to 5. 5V. 4. TTL and high speed C-MOS logic compatible.
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BFRX-1001/H4D
BFRX-1001/H4D
-24dBm
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IC P 531
Abstract: TOSLINK cable
Text: BRIGHT LED ELECTRONICS CORP. BFTX-2002/HS SINCE 1981 ● Features: ● Package Dimensions 1. Unit-directional data transmission using plastic fiber. 2. High speed signal transmission. 3. Operating voltage:2.7 to 5.5V. 4. TTL and high speed C-MOS logic compatible.
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BFTX-2002/HS
-23dBm
-15dBm
IC P 531
TOSLINK cable
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RETICON R5609
Abstract: No abstract text available
Text: XR-1015/1016 1B T E X A R Seventh Order Elliptic Low Pass Filters PIN ASSIG NM ENT G EN ERA L DESCRIPTION T he X R -1 0 1 5 and X R -1016 a re seven pole and six zero elliptic low pass switched capacitor filters. The posi tion o f the passband of the filter is set by the frequency
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XR-1015/1016
XR-1015
XR-1016
XR-1015
XR-1016CD
RETICON R5609
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MIL-C-39012 Type N
Abstract: No abstract text available
Text: CGN-30-G Series_ DUAL DIRECTIONAL COUPLERS 0.7 to 8 GHz / Very Low Insertion Loss / 500 W CW Failsafe / 30 dB Coupling to Both Ports / Ntype PRINCIPAL SPECIFICATIONS Frequency Coupling Coupling Directivity, Model Range, Value, Flatness, dB, Number_ GHz_ dB_ dB
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CGN-30-G
CGN-30-0
CGN-30-1G
CGN-30-1
CGN-30-3G
CGN-30-3
CGN-30-6G
MIL-C-39012
MIL-C-39012 Type N
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PSR 57
Abstract: pmi op80 ph meter PSR57
Text: OP-80 ULTIMA-LOW BIA S CURRENT OPERATIONAL AM PLIFIER •»■Liiinni.iiiiuiuui.il • Ultra-Low Bias Current: 150 femtoamps T y p . at +25°C 300 femtoamps T y p .at +85°C
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OP-80
AD549
OPA128
PSR 57
pmi op80
ph meter
PSR57
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Untitled
Abstract: No abstract text available
Text: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ A ll m o d u lato rs, d em od ulators an d filte rs w ith c o m p ro m ise eq u alizers o n chip □ C all p ro g ress m od e, tone gen erato rs for D TM F, V .22 guard and callin g tones □ Sin gle 5 V p o w er sup ply w ith
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SC11016
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DML-2B-10G
Abstract: No abstract text available
Text: DML-2B-10G_ DOUBLE BALANCED MIXER 2 to 18 GHz /+ 7 to 10 dBm LO / Low Corn. Loss / Wideband IF / hlermetic Pkg with Removable SMA PRINCIPAL SPECIFICATIONS RF/LO LO Drive IF Model Frequency, Range, Range, Number GHz dBm, Norn. GHz DML-2B-10G 3 - 1 8 +7 t o +10
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DML-2B-10G_
DML-2B-10G
50system,
MIL-M-28837
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TY 1016
Abstract: No abstract text available
Text: DML-6 B-10G_ •m Pl£BALANCH?M IXm 2to18CHz/+ 10to+13 dBmLD/Low Gcm.Loss/ WideterdlF/ HermeticFkgwith F&m/ableSMA PRINCIPAL SPECIFICATIONS RF/LO LO Drive IF Model Frequency, Range, Range, Number GHz dBm, Nom. GHz DML-6B-10G 2-18 Conversion Loss, SSB, dB,
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B-10G_
2to18CHz/+
DML-6B-10G
23Feb96
AC/41
201-575-1300/FAX201-575-0531
TY 1016
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SC11016CV
Abstract: No abstract text available
Text: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ □ □ All m od u lato rs, dem od u lators an d filters w ith co m p ro m ise equ alizers on chip Call p rog ress m od e, to n e gen erators for D TM F, V .22 gu ard and calling tones Single 5 V p o w e r sup ply with
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SC11016
SC11016CV
SC11016CN
SC11016CV
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T6KB
Abstract: No abstract text available
Text: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ A ll m o d u lato rs, d em od ulators and filte rs w ith c o m p ro m ise eq u alizers on chip □ C a ll prog ress m ode, tone gen erato rs for D T M F , V .22 guard and callin g tones □ Sin gle 5 V p ow er sup p ly w ith
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SC11015
T6KB
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Untitled
Abstract: No abstract text available
Text: 42E D NICROPAC INDUSTRIES INC B U112U40 0000^2? 1 B MPI M L N 10 0 0 O S C IL L A T O R S E R IE S N A R R O W B A N D LO W N O IS E , L I N E A R T U N IN G V C O s PRELIMINARY’ VOLTAGE & TEMPERATURE STABILIZED OSCILLATOR SUBSYSTEM FEATURES: • Dramatically improved performance over
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U112U40
dBc/Hz/100
50-OHM
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STK 2028
Abstract: stk 2029 STK+2028 mallory capacitor 1500 uF
Text: • Type TBS All-Tantalum Button Formerly W13 Wet Tantalum Capacitors W e! T a n ta lu m C a p a c ito rs High AC and Surge Currents All T antalum Construction Qualified toM IL-C- 83500 3 Volt Reverse Voltage To125°C 100% Burn In Custom Designs Available
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To125Â
40kHz
TBS0088M00B0*
TBSQ680MQ015*
TBS062QM0015*
TB80476M0026*
TBS0047M0075*
TBS0390M0049*
TB80220M0060*
TBS0150M0075*
STK 2028
stk 2029
STK+2028
mallory capacitor 1500 uF
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Untitled
Abstract: No abstract text available
Text: OP-80 PMÌ UITRA-LOW BIAS CURRENT OPERAHONAL AMPLMER Precision M onolithics Inc. FE A T U R ES high com m on-m ode and differential input im pedan ces. Incor porating a novel input protection design, the O P -8 0 achieves ove r 7 00V of E S D protection while m aintaining very low input
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OP-80
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NDT451N
Abstract: No abstract text available
Text: S e ptem be r 1996 National Semiconductor" N D T451N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT451N
NDT451N
OT-223
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NDT3055L
Abstract: 6SS4 NDT3055
Text: S e ptem be r 1996 N ational f Semiconductor"' i N D T3055L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancem ent m ode field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDT3055L
NDT3055L
OT-223
6SS4
NDT3055
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Untitled
Abstract: No abstract text available
Text: REF-02 PMi + 5 V PRECISION VOLTAGE REFERENCE/TEMPERATURE TRANSDUCER L is io n M o n o lith its I FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The REF-02 precision voltage reference provides a stable + 5V output which can be adjusted over a ±6% range with
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REF-02
REF-02
OP-02E
20ppm
350MO
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Untitled
Abstract: No abstract text available
Text: ri •S- D D C i MEM-84000 ILC DATA DEVICE CORPORATION_ 64K x 16 STATIC RAM FEATURES APPRO X. Vz ACTUAL S IZE DESCRIPTION The M E M -84 00 0 is a 64K x 16 static RAM organized as four 32K x 8 blocks. Features of this hybrid include TTL com patible inputs and outputs, external or
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NDT3055
Abstract: No abstract text available
Text: t* September 1996 National Semiconductor" N D T3055 N-Channel Enhancement M ode Field Effect Transistor General Description Features P ow er SO T N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's
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NDT3055
NDT3055
OT-223
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LAL 2.25
Abstract: NDT451 NDT451AN TRANSISTOR b72
Text: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's
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NDT451
NDT451AN
OT-223
LAL 2.25
TRANSISTOR b72
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34B SOT
Abstract: NDT452P c3 sot223
Text: September 1996 National f i Semiconductor"' N D T452P P-Channel Enhancement M ode Field Effect Transistor G eneral Description Features P ow er SO T P-Channel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n sisto rs are pro d u ce d using N a tio n a l's
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NDT452P
OT-223.
NDT452P
OT-223
34B SOT
c3 sot223
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NDT2955 SOT223
Abstract: NDT2955 E125
Text: September 1996 National Semiconductor" N D T2955 P-Channel Enhancement M ode Field Effect Transistor General Description Pow er SOT P -C h a n n e l Features power • -2 .5 A , -6 0 V . RDS 0N = 0 .3 £ i @ V GS = -1 0V. fie ld e ffe c t tr a n s is to r s a re p ro d u c e d u s in g N a tio n a l's
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NDT2955
OT-22rrent
NDT2955
OT-223
NDT2955 SOT223
E125
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pmi op80
Abstract: OP80EJ ph meter circuit AD549 electrometer opa128
Text: OP-80 PMÏ ULTRA-LOW BIAS CURRENT OPERATIONAL AMPLIFIER M o n o l i t h i c s In c high com m on-m ode and differential input im pedances. Incor porating a novel input protection design, the O P-80 achieves over 700V of ESD protection w hile m aintaining very low input
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OP-80
AD549
OPA128
pmi op80
OP80EJ
ph meter circuit
electrometer opa128
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M55302 60
Abstract: Litton G 58 sj 2519 4cx 2500 55ao litton male sf 8636 MIL-C-55302/59
Text: MIL-C-55302 — Table Of Contents Description Specifications Materials and finishes UMR-FF Series 1 MIL-C-55302/55 Straight through socket connector without mounting ears. Ma:es with U M R -M Series. M IL-C -55302/56 U M R-M M Series 2 MIL-C-55302/56 Straight throuqh male connector without mounting ears.
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MIL-C-55302
MIL-C-55302/55
MIL-C-55302/56
MIL-C-55302/55
MIL-C-55302/57
MIL-C-55302/58
MIL-C-55302/57/61;
55302/63-B(
M55302/63-CO
M55302/63-D
M55302 60
Litton G 58
sj 2519
4cx 2500
55ao
litton male
sf 8636
MIL-C-55302/59
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