TY 1016 SCR Search Results

RETICON R5609

Contextual Info: XR-1015/1016 1B T E X A R Seventh Order Elliptic Low Pass Filters PIN ASSIG NM ENT G EN ERA L DESCRIPTION T he X R -1 0 1 5 and X R -1016 a re seven pole and six zero elliptic low pass switched capacitor filters. The posi­ tion o f the passband of the filter is set by the frequency

MIL-C-39012 Type N

Contextual Info: CGN-30-G Series_ DUAL DIRECTIONAL COUPLERS 0.7 to 8 GHz / Very Low Insertion Loss / 500 W CW Failsafe / 30 dB Coupling to Both Ports / Ntype PRINCIPAL SPECIFICATIONS Frequency Coupling Coupling Directivity, Model Range, Value, Flatness, dB, Number_ GHz_ dB_ dB

PSR 57

Abstract: pmi op80 ph meter PSR57
Contextual Info: OP-80 ULTIMA-LOW BIA S CURRENT OPERATIONAL AM PLIFIER •»■Liiinni.iiiiuiuui.il • Ultra-Low Bias Current: 150 femtoamps T y p . at +25°C 300 femtoamps T y p .at +85°C

Contextual Info: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ A ll m o d u lato rs, d em od ulators an d filte rs w ith c o m p ro m ise eq u alizers o n chip □ C all p ro g ress m od e, tone gen­ erato rs for D TM F, V .22 guard and callin g tones □ Sin gle 5 V p o w er sup ply w ith

DML-2B-10G

Contextual Info: DML-2B-10G_ DOUBLE BALANCED MIXER 2 to 18 GHz /+ 7 to 10 dBm LO / Low Corn. Loss / Wideband IF / hlermetic Pkg with Removable SMA PRINCIPAL SPECIFICATIONS RF/LO LO Drive IF Model Frequency, Range, Range, Number GHz dBm, Norn. GHz DML-2B-10G 3 - 1 8 +7 t o +10

TY 1016

Contextual Info: DML-6 B-10G_ •m Pl£BALANCH?M IXm 2to18CHz/+ 10to+13 dBmLD/Low Gcm.Loss/ WideterdlF/ HermeticFkgwith F&m/ableSMA PRINCIPAL SPECIFICATIONS RF/LO LO Drive IF Model Frequency, Range, Range, Number GHz dBm, Nom. GHz DML-6B-10G 2-18 Conversion Loss, SSB, dB,

SC11016CV

Contextual Info: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ □ □ All m od u lato rs, dem od u lators an d filters w ith co m p ro m ise equ alizers on chip Call p rog ress m od e, to n e gen ­ erators for D TM F, V .22 gu ard and calling tones Single 5 V p o w e r sup ply with

T6KB

Contextual Info: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ A ll m o d u lato rs, d em od ulators and filte rs w ith c o m p ro m ise eq u alizers on chip □ C a ll prog ress m ode, tone gen ­ erato rs for D T M F , V .22 guard and callin g tones □ Sin gle 5 V p ow er sup p ly w ith

Contextual Info: 42E D NICROPAC INDUSTRIES INC B U112U40 0000^2? 1 B MPI M L N 10 0 0 O S C IL L A T O R S E R IE S N A R R O W B A N D LO W N O IS E , L I N E A R T U N IN G V C O s PRELIMINARY’ VOLTAGE & TEMPERATURE STABILIZED OSCILLATOR SUBSYSTEM FEATURES: • Dramatically improved performance over

STK 2028

Abstract: stk 2029 STK+2028 mallory capacitor 1500 uF
Contextual Info: • Type TBS All-Tantalum Button Formerly W13 Wet Tantalum Capacitors W e! T a n ta lu m C a p a c ito rs High AC and Surge Currents All T antalum Construction Qualified toM IL-C- 83500 3 Volt Reverse Voltage To125°C 100% Burn In Custom Designs Available

Contextual Info: OP-80 PMÌ UITRA-LOW BIAS CURRENT OPERAHONAL AMPLMER Precision M onolithics Inc. FE A T U R ES high com m on-m ode and differential input im pedan ces. Incor­ porating a novel input protection design, the O P -8 0 achieves ove r 7 00V of E S D protection while m aintaining very low input

Contextual Info: BRIGHT LED ELECTRONICS CORP. BFRX-1001/H6 SINCE 1981 ● Features: ● Package Dimensions 1. Uni-directional data transmission using plastic fiber. 2. High speed signal transmission. 3. Operating voltage:4.7 to 5. 5V. 4. TTL and high speed C-MOS logic compatible.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BFRX-1001/H4D SINCE 1981 ● Features: ● Package Dimensions 1. Uni-directional data transmission using plastic fiber. 2. High speed signal transmission. 3. Operating voltage:4.7 to 5. 5V. 4. TTL and high speed C-MOS logic compatible.

30.494.0010.0

Contextual Info: Bus Bars and Accessories 122 With these parts, entire bus bar systems can be mounted in com pliance with VDE 0100 and VDE 0108. The widths of the terminals have been selected such that a clear-cut assignment of the termi­ nals of the individual circuits can be easily recognized and that they fit the pitch ratio of the automatic

IC P 531

Abstract: TOSLINK cable
Contextual Info: BRIGHT LED ELECTRONICS CORP. BFTX-2002/HS SINCE 1981 ● Features: ● Package Dimensions 1. Unit-directional data transmission using plastic fiber. 2. High speed signal transmission. 3. Operating voltage:2.7 to 5.5V. 4. TTL and high speed C-MOS logic compatible.

NDT3055L

Abstract: 6SS4 NDT3055
Contextual Info: S e ptem be r 1996 N ational f Semiconductor"' i N D T3055L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancem ent m ode field effect transistors are produced using National's proprietary, high cell density, DMOS

Contextual Info: REF-02 PMi + 5 V PRECISION VOLTAGE REFERENCE/TEMPERATURE TRANSDUCER L is io n M o n o lith its I FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The REF-02 precision voltage reference provides a stable + 5V output which can be adjusted over a ±6% range with

Contextual Info: ri •S- D D C i MEM-84000 ILC DATA DEVICE CORPORATION_ 64K x 16 STATIC RAM FEATURES APPRO X. Vz ACTUAL S IZE DESCRIPTION The M E M -84 00 0 is a 64K x 16 static RAM organized as four 32K x 8 blocks. Features of this hybrid include TTL com­ patible inputs and outputs, external or

NDT3055

Contextual Info: t* September 1996 National Semiconductor" N D T3055 N-Channel Enhancement M ode Field Effect Transistor General Description Features P ow er SO T N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's

LAL 2.25

Abstract: NDT451 NDT451AN TRANSISTOR b72
Contextual Info: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's

34B SOT

Abstract: NDT452P c3 sot223
Contextual Info: September 1996 National f i Semiconductor"' N D T452P P-Channel Enhancement M ode Field Effect Transistor G eneral Description Features P ow er SO T P-Channel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n sisto rs are pro d u ce d using N a tio n a l's

NDT2955 SOT223

Abstract: NDT2955 E125
Contextual Info: September 1996 National Semiconductor" N D T2955 P-Channel Enhancement M ode Field Effect Transistor General Description Pow er SOT P -C h a n n e l Features power • -2 .5 A , -6 0 V . RDS 0N = 0 .3 £ i @ V GS = -1 0V. fie ld e ffe c t tr a n s is to r s a re p ro d u c e d u s in g N a tio n a l's

pmi op80

Abstract: OP80EJ ph meter circuit AD549 electrometer opa128
Contextual Info: OP-80 PMÏ ULTRA-LOW BIAS CURRENT OPERATIONAL AMPLIFIER M o n o l i t h i c s In c high com m on-m ode and differential input im pedances. Incor­ porating a novel input protection design, the O P-80 achieves over 700V of ESD protection w hile m aintaining very low input

M55302 60

Abstract: Litton G 58 sj 2519 4cx 2500 55ao litton male sf 8636 MIL-C-55302/59
Contextual Info: MIL-C-55302 — Table Of Contents Description Specifications Materials and finishes UMR-FF Series 1 MIL-C-55302/55 Straight through socket connector without mounting ears. Ma:es with U M R -M Series. M IL-C -55302/56 U M R-M M Series 2 MIL-C-55302/56 Straight throuqh male connector without mounting ears.