TYPES OF TRANSISTER Search Results

fuji step motor

Contextual Info: High Performance Multifunctional Inverters Maximum Engineering for Global Advantage FUJI INVERTERS With the flexibility and functionality to support a wide range of applications on all types of mechanical equipment, the FRENIC-MEGA takes core capability, responsiveness, environmental awareness, and

smd transistor marking 12W

Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
Contextual Info: 8. P r e c a u t io n s in H a n d l i n g s urfa c e m o u n t d e v ic e s S M D types of surface m ount transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor’s envelope is com­ parable to those of the TO-236 and SOT-23

an5296

Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A
Contextual Info: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

Contextual Info: CA3146, CA3146A, CA3183, CA3183A HARRIS S E M I C O N D U C T O R August 1996 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors - V qe M atch. ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)

CA3183

Abstract: AN5296 application note ca3146 AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183
Contextual Info: îSî h a r r i s ou semiconductor CA3146, CA3146A, CA3183, CA3183A High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - V b e M a tc h .±5m V Max

an5296

Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
Contextual Info: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)

AN5296 Application of the CA3018 Integrated

Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
Contextual Info: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

bluetooth advantages and disadvantages

Abstract: japanese transistor manual substitution verilog code for speech recognition japanese transistor substitution 29LV160 29lv200 transister 117 29lv400 apex20k400 K52 Package
Contextual Info: PF1084-05 S1C33 Family Data Sheets • S1C33 Family • S1C33000 Core • S1C33209 • S1C33T01 • S1C33L01 • S1C33S01 • S1C33221/222 • S1C33240 • S1C33210 • S1C33205/225/226/245 • S1C33L03 • S1C33 Family Development Environment • S1C33 Family Middleware and Firmware

R5F21134FP

Abstract: R5F21134 failure test report PULSE MODE CURRENT SOURCE IC endurance test report
Contextual Info: Report No. MSR-04-1035 Date:Oct 25, 2004 RENESAS SEMICONDUCTOR RELIABILITY REPORT DEVICE: R5F21134FP APPLICATION: Single chip microcomputer for consumer Reported by Y.Shimizu Confirmed by Y.Iwamoto Approved by T. Matsunaga MCU Quality Assurance Dept. Quality Assurance Div.

thyristor Q 720

Abstract: gate stacks Device Name 23 330 FDS3500 FDS602T
Contextual Info: STA C K •R E C TIFIER DIODE STACKS Mitsubishi stacks come in a variety of connection modes and voltage and current ratings so that they can be used in all kinds of DC and AC applications. Mitsubishi stacks include rectifier diode stacks, thyristor stacks, and stacks

transistor MJ 13003

Abstract: transistor bd 711 step-down sot-23-5 input DIL M50 coil pin diagram of 8355 shindengen MC mj 13003
Contextual Info: Rev.1.2-11 ULTRA-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM

transistor MJ 13003

Abstract: mj 13003
Contextual Info: Rev.1.2 ULTRA-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM

CMOS op-amp

Contextual Info: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY

USI6000

Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
Contextual Info: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer

2SK1365

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance

serdes hdmi optical fibre

Abstract: camera-link to hd-SDI converter RS-485 spice camera-link to HDMI converter 10G BERT 40 pin lvds laptop connector camera-link to 3G-SDI converter hd-SDI deserializer LVDS HDMI cat5 specifications of tdr
Contextual Info: LVDS Owner’s Manual Including High-Speed CML and Signal Conditioning Fourth Edition 2008 High-Speed Interface Technologies Overview. 9-13 Network Topology. 15-17 SerDes Architectures. 19-29 Termination and Translation.31-38

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2030 Field Effect Transistor Silicon N Channel MOSType c-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - r ds (ON) = 0 .1 0Q (Typ.) • High Forward Transfer Admittance

Contextual Info: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6

Hyperstone

Abstract: ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135
Contextual Info: Jun. 29, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2216 GMS30C2232 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may

d2166

Abstract: Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n
Contextual Info: Jun 13, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2116 GMS30C2132 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may serve

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)

rs flip-flop IC 7400

Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
Contextual Info: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper­ ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)