U 1RF Search Results

Contextual Info: D 1RFRD006 REVISION RECORD REV ECO DESCRIPTION DRFT CHKD 21.5 ln _ o +i to ro to u tj I _Q _ o CD il u ^ u u u n u u u : _Q _ _Q _ 2 .5 4 - 3u 2- -15u" 4—30u” _Q _ 11.43 2.54 , 8 . 8 9 ± 0.2 54.61 6u” -5 0 u ” FRONT PEG 4.57 FRONT PEG 4.57,WITH

irf9220

Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
Contextual Info: 7 T ti 4 m E DUUÌ4 Jj 4 ü IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 Preliminary Specification SAMSUNG S POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i - 2 0 0 Volt, 1.5 Ohm SFET DE | T T b m M E o u iv n v iM n i RoS on •d

Contextual Info: HN3C18FT TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M í f 1RFT • ■ u m MF ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super

1RF820

Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

IRF 850

Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF340 IRF350 IRF440 IRF450 IRF740
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

VN64GA

Abstract: 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740 IRF440
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220 Siliconix

65ZB

Contextual Info: TOSHIBA TENTATIVE HN9C05FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M Q f Í 1RFT • ■ ■ V MT ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS TWO devices are built in to the super-thin and ultra super mini ^ f i m '- n o i ^n a/ u< -v»ulrua gc rcv*

1rf830

Abstract: 5002A VN64GA ibf830 IRF432 IRF340 IRF350 IRF440 IRF450 IRF740
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide * 2 0 0 ° C RATING I i Packages: u BV qss Volts 450-500 TO-3 TO-220

EYSF2SsXX

Contextual Info: Class 2 USB Full Module RM+C+BC EYSF2SSXX 7 □ y ^ElBlock Diagram fôUFeatures • f l* it i* 4 d B ( C la s s 2 ) • V ' J U v 'J & U -f U □ "j • R F v - J U K&JÍ5 • t e ìS M * • - f > í ~ 7 i ' f 7 .E Y S F 2 S S X X (USB) • H C I 7 7 - A 1) i 7 r t

irf3245

Abstract: irf d10 diode B253 B256 F9423XC ffs 642
Contextual Info: F9423 FIFO Buffer Memory FA IRCHILD A S chlum berger Com pany M ic ro p ro c e s s o r P ro d u ct Description Device O rganization The F a irc h ild F9423 is an e x p a n d a b le fa ll-th ro u g h -ty p e h igh -spe ed firs t-in , firs t-o u t FIFO b u ffe r m e m o ry th a t is

hcl laptop MOTHERBOARD CIRCUIT diagram

Abstract: ward leonard tubular resistors laptop cq 42 MOTHERBOARD VOLTAGE diagram casio tv 1400 hsp43168 CY7C510 om 25fs electronic tubes harris "device marking conventions" AUDIO DELAY CIRCUIT DIAGRAM instrument echo rever
Contextual Info: fH HARRIS U U S E M I C O N D U C T O R HARRIS SEMICONDUCTOR DSP PRODUCTS T his Digital Signal Processing databook represents the full line o f H arris S em iconductor DSP products for com m ercial and m ilitary applications and supersedes previously published DSP m aterial under the Harris, G E,

IRFK4H350

Abstract: IRFK4J350 E27106
Contextual Info: Bulletin E27106 international î^iKectitier iririv^mou,iniriv^ü^ou inri/üi inrn m r"i/ /i irtrn Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • U in h i i P n r r ' û n t P o r\ < 3 h ilî4 \ i v /a |ja u u iiÿ . • UL recognised E78996.

F433

Contextual Info: 433 54F/74F433 First-In First-Out FIFO Buffer Memory Connection Diagrams Donription J n y P u t o f i an expandable fall-through type high-speed first-in first-o u t * I F O )Jm ijm J*WLory tha t is op tim ize d fo r high-speed d isk o r tape c o n trc M e y iy K m a fc u n ic a tio n b u ffe r ap plicatio ns. It is organized as 64

ifu320

Abstract: fu320 IFR321 fr320
Contextual Info: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated

Contextual Info: Panasonic ICs for CD/CD-ROM Player AN8808SB Three-Beam Method Head Amplifier 1C for CD supporting the hologram pick-up • Overview The A N 8808S B is a head am plifier 1C supporting the d ig ita l s e rv o (s u p p o rtin g th e v o lta g e o u tp u t ho lo g ra m

7137A

Abstract: 7a77 WH ae 3S16 rj-dc x28b JUPD17135ACT-XXX uPD17135A ZFX-3 U71 nec PUT
Contextual Info: ~r — $ • v — I' M O S * f iE lS § iM v i vOS r ò iIntegrated i iic y i a ic u o iiu u ii Circuit r iiPD 17135 A, 17137 A , 17137 A A 'J 'S !3 U S 4 t i"J K • V > ? V l h a - 7 /¿PD17135A, 17137A, 17137A (A) l±, 8 fcfy h A /D = l> A -£ (4 *•+ * ;! ' ) , £ <

Contextual Info: M IN IA T U R E A L U M IN U M E L E C T R O L Y T IC C A P A C lT O P S MH5 S/'J-X SERIES 105°C ra$5mmop 105°C 5mm Height. SPECIFICATIONS is a Items- Ch_ —40’— H05°C Operating Ti Æ t& * Rated Voltag ft m sties Œ Vi « # Hr tel & 6 .3 -5 0 V .D C

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

siemens 3ld 25

Abstract: TA5C HYB3116405BT
Contextual Info: r i E u r f t k c j i ç m ç r a j INFORMATION NOTE F o u rth G e n e r a t io n 16M - D R A M s C h a ra c te risa tio n D ata 3 .3 V p ro d u cts "f n c I r^ C J mftjT0M11.DOC SiEM ENS _ 3,3V lé M - D H A M s

Contextual Info: 15.4 m «? «* Ln Ebene - Level 3 25 H - -I I I I I-I t I I I ^1 max I I I 1max 50max Beslueckungsplan - contact layout 25242322212019 « 1 7 16 B U B 1211 109 8 7 6 5 4 3 2 1 FF FF! rFF FF1 rFF FF 1'FF FF 1rFFF h H k W tld H H KK KB KK KK !$ KK KK KK KK ! u<K!l > KK KK KK KK $< KK KK KK KK << KK KK KK

VN3S00D

Abstract: VN64GA IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M iv ia iv iv ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w i C A lA A ^ / \r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I Packages: B V qss Volts 450-500 TO-3 TO-220 Siliconix

h213

Contextual Info: HMC213MS8 / 213MS8E v02.0505 GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.5 - 4.5 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC213MS8 / HMC213MS8E is ideal for: Ultra Small Package: MSOP8 • Base Stations Conversion Loss: 8.5 dB

LA 7821

Abstract: LM 7821 str wg 753 pj 0266 lu 7821 YCR02 p46ad F7821 NEC 7924 PD78213
Contextual Info: J. 8 I I ih Y N E C ^ M os M O S In te g ra te d C ir c u it //PD78212 A ,78213 (A),78214 (A) t f -y h • is > V iV j- 7 7°* v > r ^ P = i V b 0 zL — ^ ¿iPD78212(A), 78213(A), 78214(A) tt, 78K/II -> U- X ' W i S T t . 78K/II v 'J - X l i , ^ Î Æ â R H J : U 1M

VN64GA

Abstract: irf840 TD4A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 VNP002A
Contextual Info: Ü Ü A C D ^ U / C D M i v i a D r/\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 450-500 TO-3 TO-220 Siliconix