U 6516 Search Results

Contextual Info: Specifications HM-6516-2/HM-B516-9 ABSOLUTE M A XIM U M RATINGS S u p p ly V o lta g e V C C - G N D OPERATING RANGE -0 .3 to 8 .0 V In p u t o r O u tp u t V o lta g e A p p lie d O p e ra tin g S u p p ly V o lta g e M ilita r y (-2 ) In d u s tria l ( -9 )

VEB mikroelektronik

Abstract: UL6516 UL6516DG15 U6516D Funkamateur FUNKAMATEUR-Bauelementeinformation MIKROELEKTRONIK ERFURT 2716 U6516dg radio fernsehen elektronik
Contextual Info: FUNKAMATEUR-Bauelementeinformation 16-Kbit-sRAM statischer Schreib/Lese-Speicherschaltkreis Industrietypen und Amateurversion U 6516 DG U 6516 DA S 1 H e rs te lle r: VEB F o rs c h u n g s z e n tru m M ik ro e le k tro n ik D resden VEB M ik ro e le k tro n ik „K a rl M a rx " E rfu rt ab 1989

Contextual Info: 30 ChipInductors- 1008LSSeries 2520 T h e s e fe rrite c o re s u rfa c e m o u n t in d u c to rs h a v e lo w e r R D C a n d h ig h e r c u rr e n t ra tin g s th a n o u r 10 0 8 C S S e rie s . T h e y 're a v a ila b le w ith in d u c ta n c e v a lu e s fro m 1.2 to 10 pH .

Contextual Info: 4bE D HARRIS SEMICON» SECTOR ÌH H U S E M I C O N D U C T O R U A R R IS • 43Q2271 0D3T1SG T W H A S H M - 6 5 1 6 2 'T -4 U j-Z .'5 - | 2 . . 2K x 8 Asynchronous CMOS Static RAM January 1992 Features Description • Fast Access T im e. . 7<V90nsMax

Contextual Info: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max.

0805CS-080XMBC

Contextual Info: 5 ChipInductois-0805CS Series 2012 T h e s e u ltr a - c o m p a c t in d u c to r s p r o v id e e x c e p tio n a l Q v a lu e s , e v e n a t h ig h fr e q u e n c ie s . T h e y h a v e a P art N um ber In d u c ta n c e 1 nH c e r a m ic b o d y a n d w ir e w o u n d c o n s tr u c tio n to p r o ­

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

Contextual Info: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns

Contextual Info: Custom Power O peratin g in p artn ersh ip w ith V icor C orporation, North Am erican Vicor Integration Architects VIAs and International Value Added Resellers (VARs), design and m a n u fa ctu re tu rn k ey cu stom power sy stem s, sp ecializin g in the u n iq u e requ irem ents of electronic equipm en t m a n u fa ctu rers in the m ilitary

Contextual Info: 22 ChipInductors-1008HQSeries 2520 T h e 1 0 0 8 H Q S e rie s o ffe rs the h ig h e s t Q fa c to rs of a n y C o ilc ra ft chip in d u cto r fa m ily, ro u g h ly 2 0 % h ig h e r th a n o u r p o p u la r 1 0 0 8 C S and H S parts. In a d d itio n , c u rre n t h a n d lin g has a lso been im p ro ve d

Contextual Info: 9 ChipInductors-0805HTSeries 2012 A t ju s t .0 3 5 " high, th e se a re o u r lo w e st profile su rfa ce m o u n t inductors. T h e ir w ire w o u n d ce ra m ic P art N um ber In d u c ta n c e 1 nH design provid e s tig h t to le ra n ce s, e xce ption al Q

HM-6516-9

Abstract: HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9
Contextual Info: m U v HM-6516 H A R R IS S E M I C O N D U C T O R 2K January 1992 8 CMOS RAM X Features Description • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use ot complementary MOS design techniques. This low power is further

Contextual Info: MPS-093011-85/-86 800 to 1000 M H z Linear Amplifier Features • +45 dBm Typical IP3 • +30 dBm Typical P1dB • 1 6 dB Typical Gain • Single Positive Bias • Available in Surface M ount or Half Flange Package Description The MPS-093011 is a m o d u la r a m p lifie r designed to m eet the u ltra -lin e a r tra n sm itte r o u tp u t requirem ents fo r m any

Contextual Info: •‘H Y U M D I U -* H Y 5 7 V 6 5 1 6 1 0 A 2 Banks x 2 U x 16 B tt Synchronous DRAM DESCRIPTION The Hyundai HY57V651610A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651610A is organized as 2banks of

BECKMAN helipot potentiometer

Abstract: BECKMAN helipot Helipot POTENTIOMETER clarostat POTENTIOMETER TYPE EJ sangamo capacitor type 500 sangamo capacitor Helipot inverter circuit diagram electra helipot 10 turn beckman instruments sangamo "current transformer"
Contextual Info: I N D U S T R I A L AND ANÂLOG N U C L E A R I N S T R U M E N T S COMPUTERS BECKMAN INSTRUMENTS, INC. 22 00 WRI GHT AVE., RI CHMOND, CALIF. TELEPHO N E. LANDSCAPE 6 -773 0 / WARNING Do not attempt to operate this instrument until you have read the Instruction Manual.

Contextual Info: 8 ChipInductors- 0402CS Series 1005 C o ilc ra ft is in tro d u c in g th e in d u s try ’s firs t 0 4 0 2 w ire w o u n d in d u c to r. tig h t in d u c ta n c e to le ra n c e s ; a n d e x c e lle n t b a tc h -to -b a tc h c o n s is te n c y . T h is n e w s e rie s s h a re s all o f th e c h a ra c te ris tic s o f

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

Contextual Info: 18 ChipInductors-0805HTSeries 2012 A t ju s t .0 3 5 " high, th e s e are o n e o f o u r lo w e st p ro file su rfa c e m o u n t in d u cto rs. T h e ir w ire w o u n d c e ra m ic d e sig n p ro vid e s tig h t to le ra n ce s, e xce p tio na l Q a nd high S R F va lu es.

Contextual Info: 12 ChipInductors-0805CS Series 2012 T h e s e u ltra -c o m p a c t in d u c to rs p ro v id e e x c e p tio n a l Q va lu e s, e ven at high fre q u e n cie s. T h e y h ave a c e ra m ic b o d y and w ire w o u n d co n stru ctio n to p ro vid e th e h ig h e s t S R F s a va ila b le in 0 80 5 size.

CERAMIC LEADLESS CHIP CARRIER

Abstract: 82C82 HM-6516 HM-92570 HM-92570-5 HM-92570-8 HM-92570-9 417-200
Contextual Info: Features P in o u t • • • • • • • • • T O P V IE W Lo w S ta n d b y C u rre n t . 600^lA /3.5m A Fast Access T im e . 250ns

SPRU011

Abstract: TIMING DIAGRAM OF MCBSP SPRU052 TMDX326006201 SPRU273 5P17
Contextual Info: TMS320C6211 FIXED-POINT DIGITAL SIGNAL PROCESSOR S P R S 073-A U G U S T 1998 VelociTI Advanced Very Long Instruction Word VLIW ’C6200 CPU Core - Eight Highly Independent Functional Units: - Six ALUs (32-/40-Bit) - Two 16-Bit Multipliers (32-Bit Results)

Contextual Info: N I C H I A ’s I n t e l l e c t u a l P r o p e r t y i n S e m i c o n d u c t o r T e c h n o l o g y N I C H I A ’s I n t e l l e c t u a l P r o p e r t y i n S e m i c o n d u c t o r T e c h n o l o g y ［半導体知的財産一覧表］ JAPAN

D5039

Abstract: 267839
Contextual Info: N I C H I A ’s I n t e l l e c t u a l P r o p e r t y i n S e m i c o n d u c t o r T e c h n o l o g y N I C H I A ’s I n t e l l e c t u a l P r o p e r t y i n S e m i c o n d u c t o r T e c h n o l o g y ［半導体知的財産一覧表］ JAPAN

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A