U1W NPN Search Results

U1W NPN Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

U1W NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
case to-106 Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT25 Pd = 250 mW PD=200 mW @ T8 25C Case: To.106 Pd = 150 mW	OCR Scan	OT-25 200mW Ta-26 O-105 O-106 O-220 020INOM. 0J07SI case to-106 SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D	PDF
3055t Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102 Contextual Info: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50	OCR Scan	02Llb4Ã 0D00D1S 3055H 3055T O-220 2955T -TO-220 800ru O-105 O-106 2n2646 pin N2647 N-055 n055 2N2646 2N4393 RU 6102	PDF
C557A Abstract: C557B c 557b 557b npn U1W npn SG311 SG119 bc558c C558B SF104 Contextual Info: A3>VA NI O E R L I K O N / S E M IC O N D 3bE D O S b lb M ê D O O D Ü 11 b B S E L I -3 1 -1 5 SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteristics At Tj»25°C Maximum Ratings Pd T«-25*C W TYPE NPN f PNP / B C , 307 307A 307B i JBC 308 I JBC	OCR Scan	6C325P 00t31 O-105 O-106 Ot37Q U8C015) 100TP. C557A C557B c 557b 557b npn U1W npn SG311 SG119 bc558c C558B SF104	PDF
BC147B Abstract: BC148B BC147A BC149B BC148A BC149C BC148C BC148 BC157A BC158B Contextual Info: ADVANI OERLIKON/ SEMICOND / 3bE ]> B OSblbMÖ O O O O D I O M M S E LI A s i l ic o n t r a n s i s t o r s NPN ‘ PNP Po =0.25W gTa«2B°C Caso: SOT-25 JBC147 BC147A >' BC147B < BC148 BC148A £ BC148B BC148C 080149 , BC149B /•BC149C f BC157 Vr BC157A , BC157B	OCR Scan	OT-25 Te-25Â Ta-25Â O-106 BC147 EBC147 BC147A EBC147A BC147B EBC147B BC148B BC149B BC148A BC149C BC148C BC148 BC157A BC158B	PDF
ESG457 Abstract: C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1 Contextual Info: / A] VANI OERLIKON/ SEÏIICONJ) DSblbMfi DDODGDT fi H S E L I 3bE D - o SILICON DIODES T - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Pd Ta=25«C mW If Peak) mA 200 200 200 150 150 150 l - “¿ 7 - 0 \ (h) Trigger devices TYPE i - o Von Vt (Trigger Voltage) mm/max	OCR Scan	O-106 Vrb12V SX400S O-105 O-220 020INOM. 0J07SI ESG457 C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1	PDF
1n813 fairchild Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei	OCR Scan	BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog	PDF