U28 113 Search Results
U28 113 Price and Stock
Panasonic Electronic Components EXB-U28113JXRES ARRAY 4 RES 11K OHM 0804 |
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EXB-U28113JX | Reel | 10,000 |
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EXB-U28113JX | Reel | 18 Weeks | 10,000 |
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EXB-U28113JX |
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EXB-U28113JX | Cut Tape | 10,000 |
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EXB-U28113JX |
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TURCK Inc CSMV 12-11-2 (U-28113)CSMV 12-11-2, U-28113 |
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CSMV 12-11-2 (U-28113) | Bulk | 1 |
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U28 113 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Amphenol UNIVERSAL SERIAL BUS CONNECTORS DESCRIPTION The Amphenol U27 and U28 Series is a complete system of interconnection technology designed in accordance with Universal Serial Bus Specification Version 1.00. This type of connector is designed to replace all the various input output interfaces used on personal |
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FPQ-256
Abstract: TSC695 F User Manual transistor bra 94 TSC695 E310D bra15 FPQ-256-0 Flash SIMM 72 29F040 SPARC V7.0 ERC32
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eVAB-695 TSC695 TSC695E eVAB-695E FPQ-256 TSC695 F User Manual transistor bra 94 TSC695 E310D bra15 FPQ-256-0 Flash SIMM 72 29F040 SPARC V7.0 ERC32 | |
MT36VDDF25672GContextual Info: 1GB, 2GB x72, ECC, DR 184-Pin DDR RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module (RDIMM) |
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184-Pin MT36VDDF12872 MT36VDDF25672 184-pin, PC2100, PC2700, PC3200 09005aef80772fd2/Source: 09005aef8075ebf6 DDF36C128 MT36VDDF25672G | |
VA22 smd
Abstract: SMD .VA22 smd code va25 SMD PD18 0,68uf 50v smd SMD LD3 TG22-3506 74ACT244DW VA22 1nF 50V 1206,SMD
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MPC8260 MPC8260-TCOM MPC8260TCOM MPC8260TCOM. /XSIG745 /XSIG763 VA22 smd SMD .VA22 smd code va25 SMD PD18 0,68uf 50v smd SMD LD3 TG22-3506 74ACT244DW VA22 1nF 50V 1206,SMD | |
VA22 smd
Abstract: SMD .VA22 ATM8 VA22 VA30 RN16 freescale HALO TG22-3506ND smd code va25 CRA06S0803 100 OHM DALE SOMC
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MPC8260 MPC8260-TCOM MPC8260TCOM MPC8260TCOM. /XSIG745 /XSIG763 VA22 smd SMD .VA22 ATM8 VA22 VA30 RN16 freescale HALO TG22-3506ND smd code va25 CRA06S0803 100 OHM DALE SOMC | |
diode marking u33
Abstract: MT46V64M4 PC2100 PC2700 PC3200 256x72
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184-Pin MT36VDDF12872 MT36VDDF25672 184-pin, PC2100, PC2700, PC3200 cap68-3900 09005aef80772fd2/Source: 09005aef8075ebf6 diode marking u33 MT46V64M4 PC2100 PC2700 PC3200 256x72 | |
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM) |
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240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 DDR2-667) MT36GTF51272F power3900 | |
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM) |
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240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 DDR2-667) MT36GTF51272F power3900 | |
ps3109
Abstract: u28 201 MARKING CODE U37 marking U38 DDR2-667 MO-256 PC2-5300 DDR2 pin out marking micron ddr2 sn131
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240-Pin MT36RTF51272FY 240-pin, MO-256 09005aef82b5dfb9 rtf36c512x72fy ps3109 u28 201 MARKING CODE U37 marking U38 DDR2-667 PC2-5300 DDR2 pin out marking micron ddr2 sn131 | |
pn133
Abstract: SN123 MT36GTF51272F
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240-Pin MT36GTF51272F 100ms MO-256 MT36GTF51272F, 80here 09005aef82b5e9cc/Source: 09005aef82b5e99e GTF36C512x72F pn133 SN123 MT36GTF51272F | |
Contextual Info: Preliminary‡ 4GB x72, DR, FB, 1.55V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36RTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.50V ≤ VDD = VDDQ ≤ 1.90V for DDR2 SDRAM |
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240-Pin MT36RTF51272F MO-256 MT36RTF51272F, DDR2-667) 09005aef82b5dfb9/Source: 09005aef82b5dfec RTF36c512x72 | |
62N-0-0-1
Abstract: assembly instruction 3061 23N-50-0-30 assembly instruction 3008 assembly instruction 9006 61N-0-0-1 24N-50-3-14 assembly instruction 22542117 23n50 21N50
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N-50-0-16/133 N-50-0-33/133 62N-0-0-1 assembly instruction 3061 23N-50-0-30 assembly instruction 3008 assembly instruction 9006 61N-0-0-1 24N-50-3-14 assembly instruction 22542117 23n50 21N50 | |
U28 113
Abstract: SL72U4J64M4H-A10V
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SL72U4J64M4H-A10V SL72U4J64M4H-A10V 54-pin 400-mil 168-pin U0-U35 U28 113 | |
U28 113
Abstract: SL64U4G32M4G-A10V
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SL64U4G32M4G-A10V SL64U4G32M4G-A10V 54-pin 400-mil 168-pin U0-U31 U28 113 | |
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Contextual Info: 4GB x72, ECC, DR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT36JS(Z)F51272PZ Features Figure 1: 240-Pin RDIMM (MO-269 R/C J) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module |
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240-Pin MT36JS F51272PZ MO-269 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 | |
p3c9 -00 01
Abstract: FPQ-256 pinout socket 754 ERC32 fpq-256-0.508-01 74LV04-U34 bra15 TSC695 xx245 Flash SIMM 72 29F040
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TSC695 4139F p3c9 -00 01 FPQ-256 pinout socket 754 ERC32 fpq-256-0.508-01 74LV04-U34 bra15 TSC695 xx245 Flash SIMM 72 29F040 | |
micron SDRAM SPD table
Abstract: U26 MARKING
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240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 09005aef82b5e9cc gtf36c512x72f micron SDRAM SPD table U26 MARKING | |
marking U34 Z 201
Abstract: marking U34 marking code U6 DO 214 SS91
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240-Pin MT36RTF51272FZ 240-pin, MO-256 DDR2-667) 09005aef840d5a4c rtf36c512x72fz marking U34 Z 201 marking U34 marking code U6 DO 214 SS91 | |
MT47J256M4
Abstract: micron SDRAM SPD table MT47J256M
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240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 09005aef82b5e9cc gtf36c512x72f MT47J256M4 micron SDRAM SPD table MT47J256M | |
U28 113Contextual Info: SL72U4J64M4H-A10xV 64M X 72 Bits 512MB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (4096 cycles/64ms refresh) |
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SL72U4J64M4H-A10xV 512MB) PC100) PC100 cycles/64ms SL72U4J64M4H-A10xV U0-U35 U28 113 | |
Contextual Info: SL72U4L128M8H-A10xV 128M X 72 Bits 1GB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (8192 cycles/64ms refresh) |
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SL72U4L128M8H-A10xV PC100) PC100 cycles/64ms SL72U4L128M8H-A10xV U0-U35 | |
EZ 523
Abstract: 133NE assembly instruction 3005 assembly instruction 3015 11 tnc-50-2-112 assembly instruction 3024 assembly instruction 3008 hubersuhner 11 TNC-50-3-116 OF 23 TNC-50-0-6 16TNC-50-3-28
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TNC-50-0-1/133 TNC-0-0-1/-33 EZ 523 133NE assembly instruction 3005 assembly instruction 3015 11 tnc-50-2-112 assembly instruction 3024 assembly instruction 3008 hubersuhner 11 TNC-50-3-116 OF 23 TNC-50-0-6 16TNC-50-3-28 | |
RA11bContextual Info: SL72R4D32M4H-A10xV 32M X 72 Bits 256MB SDRAM Registered 168-Pin DIMM ECC (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 / Intel 1.0 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability |
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SL72R4D32M4H-A10xV 256MB) 168-Pin PC100) PC100 cycles/64ms SL72R4D32M4H-A10xV U36-U40 A0-A10/AP RA11b | |
MT36KSF2G72PZ-1G
Abstract: MT36KSF2G72PZ-1G6 MT36KSF2G72PZ MT41K1G4
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240-Pin MT36KSF2G72PZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef8479a029 jkf36c2gx72pz MT36KSF2G72PZ-1G MT36KSF2G72PZ-1G6 MT36KSF2G72PZ MT41K1G4 |