U921 Search Results

Contextual Info: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology RDS on = 4.0 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = -1.53 A ν Improved Gate Charge ν Extended Safe Operating Area D-PAK ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

Potentiometer 50k rotary

Abstract: b50k 10k rotary potentiometer c 50k Potentiometers rotary potentiometer
Contextual Info: 10mm Ultra Thin Micro Rotary Potentiometers 10mm 薄型旋轉式電位器 R1001N11A1 Part Number R1001N11A1 -B 50K / φ16 x 2.8 Taper Resistance value Knob Thickness 線性 阻值 旋鈕厚度 (T) Knob Diameter 旋鈕外徑 (D) Dimensions 規格尺寸 Shaft Type 軸型

Contextual Info: 10mm Ultra Thin Micro Rotary Potentiometers 10mm 薄型旋轉式電位器 R1001N11B1 Part Number R1001N11B1- B 50K / φ16 x 2.8 Taper Resistance value Knob Thickness 線性 阻值 旋鈕厚度 (T) Knob Diameter 旋鈕外徑 (D) Dimensions 規格尺寸 Shaft Type 軸型

Contextual Info: 10mm Ultra Thin Micro Rotary Potentiometers 10mm 薄型旋轉式電位器 R1001G22A1 Part Number R1001G22A1- B 50K / φ14 x 1.0 Taper Resistance value Knob Thickness 線性 阻值 旋鈕厚度 (T) Knob Diameter 旋鈕外徑 (D) Dimensions 規格尺寸 Shaft Type 軸型

Contextual Info: PD - 95027 IRFR9210PbF U9210PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U9210PbF 2 www.irf.com IRFR/U9210PbF www.irf.com 3 IRFR/U9210PbF 4 www.irf.com IRFR/U9210PbF www.irf.com 5 IRFR/U9210PbF 6 www.irf.com IRFR/U9210PbF D-Pak TO-252AA Package Outline

Contextual Info: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier

IRF 870

Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

FR9214

Contextual Info: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (U9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A

Rotary Switch bottom IC

Abstract: AC110V AC24V M80156 M80156P
Contextual Info: TEL : 0755-25636777 FAX : 0755-25622955 XMAS LIGHT 8 功能旋鈕記憶 聖誕燈串控制 IC 8 FUNCTIONS XMAS LIGHT CONTROL FEATURES 功能敘述 MODE 1 2 3 4 5 6 7 8 • 8 functions. • Rotary switch select. • Built-in PLL, 50/60 Hz auto detect. APPLICATION 產品應用

NC243

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ^ D S o n = 4.0 Q lD = -1.53 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |jA (Max.) @ VDS = -250V

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

IRF 870

Abstract: mosfet IRF 870 IRFR9214 IRFU9214
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

Contextual Info: 9mm Ultra Thin Micro Rotary Potentiometers 9mm 薄型旋轉式電位器 R09N Part Number R09N - B 50K / φ10 x 1.8 Taper Resistance Value 線性 阻值 Knob Thickness (T) 旋鈕厚度 Knob Diameter (D) 旋鈕外徑 Dimensions 規格尺寸 http://www.song-huei.com.tw

Contextual Info: 9mm Ultra Thin Micro Rotary Potentiometers 9mm 薄型旋轉式電位器 R09NP Part Number R09NP - B 50K / φ10 x 1.8 Taper Resistance Value 線性 阻值 Knob Thickness (T) 旋鈕厚度 Knob Diameter (D) 旋鈕外徑 Dimensions 規格尺寸 http://www.song-huei.com.tw

N mosfet 250v 600A

Abstract: IRFR9214 IRFU9214 IRFR P-Channel MOSFET
Contextual Info: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier

Vishay DaTE CODE

Abstract: international rectifier code EIA-541 IRFR120 IRFU120 U120
Contextual Info: PD - 95027A IRFR9210PbF U9210PbF • Lead-Free Document Number: 91281 12/14/04 www.vishay.com 1 IRFR/U9210PbF Document Number: 91281 www.vishay.com 2 IRFR/U9210PbF Document Number: 91281 www.vishay.com 3 IRFR/U9210PbF Document Number: 91281 www.vishay.com

gs 1117 ax

Abstract: W923
Contextual Info: PD - 9.1658A International lO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -2 5 0 V R D S (on) = 3 . 0 Q. ID = - 2 . 7 A

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 3 .0 ß ■ Lower Input Capacitance lD = -1.6 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @

fairchild 999

Abstract: 999 fairchild
Contextual Info: Advanced SFR/U9210 P o w e r MOSFET FEATURES B • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge V ^ D S o n l D ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -200V

U9214

Contextual Info: Advanced SFR/U9214 P o w e r MOSFET FEATURES BV dss = -250 V • A v a la n c h e R u g g e d T e c h n o lo g y ■ R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = ■ L o w e r In p u t C a p a c ita n c e ID = -1.53 A ■ Im p ro v e d G a te C h a rg e

N mosfet 250v 600A

Contextual Info: IRFR/U9214 Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs

Contextual Info: 10mm Ultra Thin Micro Rotary Potentiometers 10mm 薄型旋轉式電位器 R1001N12A1 Part Number R1001N12A1- B 50K / φ14 X 1.0 Taper Resistance value Knob Thickness 線性 阻值 旋鈕厚度 (T) Knob Diameter 旋鈕外徑 (D) Dimensions 規格尺寸 Shaft Type 軸型