UA 3456 Search Results

DO-213AA

Contextual Info: Zener Regulator Diodes Part Number Microsemi Division Package Outline Micmsemi Data Vz Power Type Mil i i i i i l Spec Sheet IC W I (V) (zt • |mA) n-;f Zzt (fl) Zzk (f i) IR (uA) VR (V) 1.5 2 220 280 280 280 330 330 330 330 330 330 350 800 800 370 370

lm317 so-8

Abstract: lm337 so-8 LM337 TO-92 lm350 so-8 lm317 SO-8 Datasheet DFN 3.3X3.3 SC82AB-4 sot-23-5 321 Silica Semiconductors LM337 LM317
Contextual Info: Single Output Low-Dropout Linear Regulators LDOs Device MC33761 Iout Dropout* (typ) Iq* (typ) PSRR* Absolute Max Input Voltage 80 mA 160 mV 180 A 85 dB 12 V Package(s)-pins Vout Features SOT-23-5 2.5, 2.8, 2.9, 3, 5 V Ulta Low Iq Enable, Ultra Low Noise

NCP1522

Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
Contextual Info: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging

cpn 2222

Abstract: C42CD d68a
Contextual Info: 1 2345678959ABCDE81 Surface - Mount Ambient Light Sensor 123456278 2 ‧34567285289729ABCD27E7F62765D672 ‧Low sensitivity variation across various light sources8 ‧7C8D287B7C8A7275BCD72 32852 32 ‧726A4E2548C72CD72 !"2852!"2

h7cs

Contextual Info: eorex EM42AM3284LBC Revision History Revision 0.1 Mar. 2008 - First release. Revision 0.2 (Jun. 2009). - Add Extend Temperature Grade (-25°C ~85°C) product. - Add IDD6 “PASR” Spec.(page 8) Jun. 2009 www.eorex.com 1/24 eorex EM42AM3284LBC 512Mb (4Mx4Bank×32)

EM42AM3284LBA

Abstract: EM42AM3284LBA-75F
Contextual Info: eorex EM42AM3284LBA Revision History Revision 0.1 Oct. 2006 - First release. Revision 0.2 (Oct. 2007). - Modify ball size spec from 0.5mm to 0.45mm. Revision 0.3 (Jan. 2008). - add 166/333Mhz @CL3 speed. Revision 0.4 (Mar. 2008). - Add IDD6 “PASR” Spec.(page 7)

Contextual Info: TO PIDSA HQ DELIVERY SPECIFICATIONS Orderer Customer Part Number Panasonic Global Part Number Vendor Issue Number AN41908A-VB 1203027 ORDERER (CUSTOMER) Confirmation of Security Control We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein

Contextual Info: Surface - Mount Ambient Light Sensor 12345678497ABC27DDC6EF 123456278 2 ‧34567287695A6BC74D2E52EF72FA27D72697E82 ‧BFE2E523887AE2A4525E9E2 ‧ ‧

Contextual Info: ACE8212B Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is

Contextual Info: ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is

SM16200C

Contextual Info: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

PD65625

Abstract: PD65654 V30MZC PD65808 V30MX PD65875 PD65842 PD65841 CMOS-N5 PD65802
Contextual Info: CD-ROM版セミカスタム IC CD-ROM X13769XJ2V0CD00 05−1 セミカスタム IC NECのASIC • ASICとは？（1/2） LSIは大きく，汎用LSIと特定用途向けLSI （ASIC：Application Specific IC） とに分けられます。 汎用LSIは， メーカ側で独自に設計し標準のLSIとして市販されているLSIです。各ユーザの使用量は少なくても大

SM32100C

Abstract: VM321 IS42SM32100C
Contextual Info: IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: I S42SM32100C I S42RM32100C I S42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32100C

Abstract: IS42RM32100C-75BLI IS42SM32100C
Contextual Info: IS42SM32100C IS42RM32100C IS42VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: I S42SM16200C I S42RM16200C I S42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/ VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

transistor 13001 s 6b

Contextual Info: June 12th, 2012 Automotive Grade AUIRS212 7,71,8,81 S Over Current Protected Single Channel Driver Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune

IS42RM32400G

Contextual Info: IS42SM/RM/VM32400G Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM32400G

Abstract: IS42SM32400G-75BI is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G
Contextual Info: IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM16800G

Abstract: IS42SM16800G-75BI IS42VM16800G-75BI IS42SM16800G IS42VM16800G-75BL IS42SM16800G-75BLI IS42RM16800G
Contextual Info: IS42/45SM/RM/VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

is42sm

Abstract: IS42SM16800G-75BLI IS42SM16800G IS42RM16800G
Contextual Info: IS42SM/RM/VM16800G Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM16800G

Contextual Info: I S42/ 45SM/ RM/ VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32400G

Contextual Info: I S42/ 45SM/ RM/ VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

ifr 4000

Abstract: marker beacon receiver 6041-5680-800 1002-5600-4C0 Types of Radar Antenna ion lithium battery ev Beacon ELT 406 ES 5106 V ED62 diode 1002-5600-8P0
Contextual Info: NAV/COMM Test Set IFR 4000 Operation Manual Issue-2 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign third party without the specific prior approval of the U.S. Department