UBR 100 Search Results

Contextual Info: TECHNICAL DATA SHEET ADAPTOR RPC-3.50 JACK - WAVEGUIDE 03K220-UBR All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Mechanically compatible with Waveguide flange UBR 220 according to IEC 60169-23 RPC-2.92 and SMA IEC 60154 and IEC 153

avalanche photodiode noise factor

Contextual Info: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Avalanche photodiode APD

Contextual Info: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

SSO-AD-500-TO52i

Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Contextual Info: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)

TO52 package

Contextual Info: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Contextual Info: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)

Contextual Info: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

TO52

Abstract: SSO-AD-230-TO52-S1
Contextual Info: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

nir source

Contextual Info: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)

nir source

Contextual Info: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance

Avalanche photodiode APD

Contextual Info: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance

MXT4400

Abstract: MXT3010 AS4400
Contextual Info: CellMaker-622TM Release 3.2 operations and reference manual Order Number: 100516-04 December 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the

UBR220

Abstract: UBR100 flange waveguide R120 WR75 CIRCULATOR wr75 Racal UBR23 waveguide circulator 18C3041 racal isolator WR75
Contextual Info: WAVEGUIDE JU N C T IO N C IR C U L A T O R S AND ISO LA TO R S A full range of waveguide junction circulators and isolators are available covering the frequency range 3.400GHz - 65.000GHz. This range includes units manufactured from investment castings and

Photo resistor

Contextual Info: SSO-AD-230-i Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52i : Parameters: Active area 0,042 mm2 ∅ 230 µm dark current 1) (M=100) max. 1,5 nA typ. 0,6 nA Total capacitance 1)

mega161

Abstract: ne 5555 timer 005D SP15 Bit02 Baud
Contextual Info: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

waveguide R120 WR75

Abstract: UER84 ubr 100 WR112 flange wr112 UBR100 UBR84 UBR-120 WR137 flange WR90 waveguide
Contextual Info: ISO- ORS Integrating a coaxial isolator with a waveguide to coaxial transition provides a com bination which ensures optimum microwave performance. Custom designs are available on request. WAVEGUIDE DESIGNATION British Stand IEC RETMA SPECIFICATION TYPE NO.

CELLMAKER-622

Abstract: CRC10 MXT3010
Contextual Info: CellMaker-622TM Release 2.1 operations and reference manual Order Number: 100113-15 December 1998 Copyright c 1998 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the

Cu80

Abstract: diode 4148 specification diode 4148 in 4148 78min UBR100
Contextual Info: Technical specification Page 1 Pages 2 Chip for silicon switching diode Type: 1N 4148 chip size 0,28 х 0,28 mm Diameter of wafer Sizes of chip F/2 100 mm 0,28 х 0,28 mm А B 170 ± 10 µm C 50 ± 5 µm D 140 ± 20 µm Metallization of planar side V - Ag

005D

Abstract: SP15
Contextual Info: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

Contextual Info: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

005D

Abstract: SP15
Contextual Info: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

005D

Abstract: SP15 LCD FREQUENCY COUNTER MODULE
Contextual Info: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

nir source

Abstract: apd 400- 700 nm
Contextual Info: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm