UD DIODE Search Results
UD DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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UD DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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UDN2950Z
Abstract: UDN2935Z UDN2936W UDN2936W-120
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UDN2935Z UDN2950Z UDN2935Z UDN2936W/W-120 UDN2936W) UDN2936W-120) UDN2950Z UDN2936W UDN2936W-120 | |
XC3030A-5PL84C
Abstract: UD10 UD09 ud02 EPM7128 XC3030 UD Series UD27 ulc xc3030 matra universal logic circuit
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65-mm standb27 300-mil 150-mil XC3030A-5PL84C UD10 UD09 ud02 EPM7128 XC3030 UD Series UD27 ulc xc3030 matra universal logic circuit | |
Contextual Info: SK 55 D SEMITOP 2 SK 55 D COOQH C=OQ N= R LL S <6477 %0+4)*.%0T C VBB @MBB C VBB @MBB <U- R VB W$T PX LL = BV PX LL = @M @ABB @ABB PX LL = @A Symbol Conditions Values Units N= U- R VB W$ LL S N= U- R @BB W$ YL S NZPQ UD[ R ML W$¥ @B &UD[ R @LB W$¥ @B &UD[ R ML W$¥ VHKIII@B &- |
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2SK2870-01LContextual Info: This material and he Information herein la the proparty of PwJI Electric Co.Ud. They shell ba neither reproduced, copied, lent, or disclosed In any way whatsoever lor the use of any third parly nor used for the manufacturing purposes without the eqiress written consent of Ftfl Electric Co.,Ud. |
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2SK2870-01L | |
2SK2871-01Contextual Info: Thl» material and the Information herein 1« the properly of Fuji Electric Co.,Ud. They »hall ba neither reproduced, copied, lent, or disclosed In any way whatsoever tor the use of any third parly nor used for the manufacturing purpose» without the aspre» written consent of Fvjl Cedric Co.,Ud. |
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2SK2871-01 2SK2871-01 O-220 H04-0Ã | |
mosfet 4502
Abstract: 2SK2874-01L
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2SK2874-Q1LS 2SK2874-01L mosfet 4502 | |
ESJA04-02AContextual Info: This m a te ria l and Ina Inform alion herein Is lie property of Fuji Electric Co.,Ud. They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of nny third parly nor used for the m anufacturing purposes w ith o u t Ihe express wrlllen consent of Fuji Electric Co .Ud. |
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ESJA04-Q2 ESJA04-02A ESJA04-DQA | |
IC udn 2981
Abstract: UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A
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29310E UDN2981A UDN2984A IC udn 2981 UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2982A UDN2982LW UDN2983A | |
UDN2983A equivalent
Abstract: A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW
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29310E UDN2981A UDN2984A UDN2983A equivalent A2982SLW A2984SLW UDN2980A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW | |
DBA20GContextual Info: Property http://sem con.sanyo. com/en/search/property.php?clcd=149&prod=DBA20G Sa n y o semiconductor Co., Ud. S A \Y O Rectifying D io des— Single-Phase Bridge Rectifying Diodes □ sp lay a list Discrete Devices Prod uct Information Type No. DBA20G Category |
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DBA20G DBA20G | |
Contextual Info: £ Z J SGS-THOMSON UD SI3 [ilLE©T^®iDiSi TMM5712 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break down voltage, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection |
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TMM5712 75T7S | |
fs100vs-03Contextual Info: MITSUBISHI Neh POWER MOSFET FS100VS-03 HIGH-SPEED SWITCHING USE FS100VS-03 OUTLINE DRAWING Dimensions in mm - 1 . 1- UD J 2} 0-2.54 3. t ö CM GATE DRAIN SOURCE DRAIN • 10V DRIVE [ • VDSS .30V |
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FS100VS-03 100ns O-220S fs100vs-03 | |
PIC Microcontroller GSM Modem
Abstract: laser diode kss GSM based home appliance control system creative sound blaster live D link adsl modem board interfacing AC motor to pic audio video uhf transmitter circuit csr LPT 2 SPI FM STEREO CODER common base mixer circuit analysis
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UDN2961W
Abstract: UDN2961B printhead
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UDN2961B/W UDN2961B PP-035 UDN2961W PP-036 FP-019 UDN2961W UDN2961B printhead | |
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1N62Contextual Info: B K C INTERNATIONAL Ü3E D | 117^ 0 3 UD oooflD ~T^ 0 1 - 0 7 •=] | Type No. 1 N62 _ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 |
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MIL-S-19500, 1N62 | |
Contextual Info: Property http://sem con.sanyo. com/en/search/property.php?clcd=149&prod=DBA40G Sa n y o semiconductor Co., Ud. S A \Y O Rectifying D io des— Single-Phase Bridge Rectifying Diodes □ sp lay a list Discrete Devices Prod uct Information Type No. DBA40G Category |
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DBA40G DBA40G | |
UDN2998W
Abstract: motor driver full bridge 20A UDN2993B 2998w UDN-2998W W108 UDN2993 3A, 50V BRIDGE UDN-2993B W-10
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UDN-2998W UDN-2998W UDN2998W motor driver full bridge 20A UDN2993B 2998w W108 UDN2993 3A, 50V BRIDGE UDN-2993B W-10 | |
SLTNWW35066NDAUSSS
Abstract: DC90 GLAR94001
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LEDRR-09006377 SLTNWW35066NDAUSSS SLTNWW35066NDAUSSS) SLTNWW35066NDAUSSS DC90 GLAR94001 | |
Contextual Info: UD DATA CSM700 Single Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem perature range of -55°C to +125°C e.g. military applications . Devices supplied have completed rigorous |
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CSM700 BS9000 1294/M) CECC20000 M/1084/ BS9000 680i2, 50Vp-p, | |
RQ1E050RPContextual Info: 4V Drive Pch MOSFET RQ1E050RP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (1) (2) (3) (4) Abbreviated symbol :UD Application Switching Inner circuit |
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RQ1E050RP R1010A RQ1E050RP | |
Contextual Info: UD D ili CD750 Dual Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler BS9000, together with CECC, is a preferred standard for use in European military projects. Consequently, Isocom Ltd’s approved devices are listed in the CECC “ MUAHAG” preferred |
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CD750 BS9400. BS9000 1294/M) BS9000, | |
Contextual Info: 4V Drive Pch MOSFET RT1E050RP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package. 3) 4V drive. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :UD Application Switching Packaging specifications |
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RT1E050RP R1010A | |
RT1E050RPContextual Info: 4V Drive Pch MOSFET RT1E050RP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package. 3) 4V drive. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :UD Application Switching Packaging specifications |
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RT1E050RP R1010A RT1E050RP | |
UDN-2954W
Abstract: UDN2954W 2954W 2953B UDN-2953B udn2953b 1.5V Voltage suppression diode rc servo motor torque s 026 stepper
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UDN-2953B UDN-2954W UDN-2954W UDN2954W 2954W 2953B udn2953b 1.5V Voltage suppression diode rc servo motor torque s 026 stepper |