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    UES1106 Price and Stock

    Microchip Technology Inc UES1106

    DIODE GEN PURP 400V 1A AXIAL
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    Microchip Technology Inc UES1106SM

    DIODE GEN PURP 400V 2A A SQ-MELF
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    Microchip Technology Inc UES1106SM 91
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    Microchip Technology Inc UES1106E3

    RECTIFIER
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    Microchip Technology Inc UES1106HR2

    DIODE GEN PURP 400V 2A A AXIAL
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    UES1106HR2 Bulk 24 Weeks 100
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    Microchip Technology Inc UES1106-TR

    DIODE GEN PURP 400V 1A
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    DigiKey UES1106-TR Reel 100
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    UES1106 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES1106 Central Semiconductor DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE Original PDF
    UES1106 BKC International 2.0 Amp Voidless Fast Switching Rectifiers Scan PDF
    UES1106 Microsemi Rectifiers, High Efficiency, 2A Scan PDF
    UES1106 Microsemi Rectifier Scan PDF
    UES1106 Unitrode International Semiconductor Data Book 1981 Scan PDF
    UES1106HR Microsemi Rectifier Scan PDF

    UES1106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    webex

    Abstract: No abstract text available
    Text: ISCFdÈŽ `çÛŽ `çÛ text/html About News Contact keyword search: UES1106SM #16647 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2 A Reverse Voltage Vrwm 400 V Max Forward Surge Current


    Original     		PDF UES1106SM 100ns) TR7\1500cntTR7 webex

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UES1104 – UES1106 HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS UES1104 - UES1106 Peak Inverse Voltage: UES1104 UES1105 UES1106 Maximum Average D.C. Output Current: IO @ TA = 25°C Free Air @ TL = 50°C, L = ⅜” Surge Current (8.3ms)


    Original     		PDF UES1104 UES1106 UES1104 UES1105

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UES1104 UES1105 UES1106 RECTIFjERS High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching


    Original     		PDF UES1104 UES1105 UES1106 UES1104 UES804HR2 MIL-STD-750 5O-60

    Untitled

    Abstract: No abstract text available
    Text: UES1106 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)0.5 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)1.0


    Original     		PDF UES1106 Voltage400 Time50n Current10u Current200u

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    1N5806

    Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
    Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


    Original     		PDF CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 22-March 1N5806 CPD17 UES1106

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIERS PA08 • PA08A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ±150mA


    Original     		PDF PA08A 546-APEX 150mA PA08MU

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: • PA08A PA08PA08 • PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION


    Original     		PDF PA08A 150mA PA08U

    1N5806

    Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
    Text: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization


    Original     		PDF CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 19-September 1N5806 mesa die CPD17 UES1106

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    Untitled

    Abstract: No abstract text available
    Text: SHF1104 & SHF1104SMS thru SHF1110 & SHF1110SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/


    Original     		PDF SHF1104 SHF1104SMS SHF1110 SHF1110SMS SHF11 10VDC, SHF1104-1106 SHF1108-1110

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS UES1104 UES1105 UES1106 High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage 1.L5V • Very Fast Recovery Times (50nSec)


    OCR Scan     		PDF UES1104 UES1105 UES1106 UES1104 50nSec)

    1104HR

    Abstract: ues1106
    Text: UES1104 UES1105 UES1106 UES1104HR UES1105HR UES1106HR RECTIFIERS High Efficiency, 2A FEATU RES D ESCR IPTIO N • • • • The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.


    OCR Scan     		PDF UES1104 UES1105 UES1106 UES1104HR UES1105HR UES1106HR 50nSec) UES1104, UES1104HR 1104HR

    BKC Semiconductors

    Abstract: DSAIH000251
    Text: 2.0 Amp Voidless Fast Applications UES1104 Switching Rectifiers thru UES1106 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where speed, higher voltage and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


    OCR Scan     		PDF UES1104 UES1106 UES1104 UES1106 BKC Semiconductors DSAIH000251

    BKC Semiconductors

    Abstract: No abstract text available
    Text: 2.0 Amp Voidless Fast Applications Switching Rectifiers UES1104 thru UES1106 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where speed, higher voltage and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


    OCR Scan     		PDF UES1104 UES1106 UES1105 LL-41 DO-213AB) BKC Semiconductors

    UES1105

    Abstract: UES1106 DO213AB package DO-213AB UES1104 BKC Semiconductors
    Text: 2.0 Amp Voidless Fast Applications Switching Rectifiers UES1104 thru UES1106 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where speed, higher voltage and small footprint are important. They are ideal for us£ in industrial, aircraft or satellite powpc supplies. :


    OCR Scan     		PDF UES1104 UES1106 UES1104 UES1105 UES1106 LL-41 DO-213AB) DO213AB package DO-213AB BKC Semiconductors

    1N6620-1N6625

    Abstract: sj0 diode 500C UES1104 UES1105 UES1106 1104HR UESI106 UES-1106
    Text: RECTIFIERS UES1104 UES1105 UES1106 High Efficiency, 2A FEATURES D E S C R IP T IO N • • • • The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz, Very Low Forward Voltage 1.15V


    OCR Scan     		PDF UES1104 UES1105 UES1106 50nSec) UES1104 UES1105 1N6620-1N6625 sj0 diode 500C UES1106 1104HR UESI106 UES-1106

    Untitled

    Abstract: No abstract text available
    Text: U ESI104 UES1105 UES1106 RECTIFIERS High Efficiency, 2A FEATU RES DESCRIPTION • • • • The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. Very Low Forward Voltage 1.15V


    OCR Scan     		PDF ESI104 UES1105 UES1106 UES1104 50nSec) UES1104 ES1106

    Untitled

    Abstract: No abstract text available
    Text: UES1104SM UES1105SM UES1106SM SURFACE M O UNT RECTIFIERS High Efficiency, 3A FEATURES DESCRIPTION • Small Convenient Surface Mount Package The UES1104SM series are surface mount power rectifiers designed for high frequency switching circuits when optimum board space and surface density constraints must be


    OCR Scan     		PDF UES1104SM UES1105SM UES1106SM UES1104SM 50nSec) UES1104SM. UES1105SM. UESU05SM

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE "t Ì CORP 9347963 UNITRODE D l f | c]3 4 7 ,ïki3 0 0 1 1 3 0 0 Ô 92D CORP 11380 UE S11 04S M UE S1 10 5S M UE S1 10 6S M SURFACE MOUNT RECTIFIERS High Efficiency, 3A r - ó y •t 5 DESC RIPTIO N FEATURES • S m a ll C o n v e n ie n t S u rfa c e M o u n t


    OCR Scan     		PDF