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    UGN3177 HALF EFFECT SENSOR Search Results

    UGN3177 HALF EFFECT SENSOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    UGN3177 HALF EFFECT SENSOR Datasheets Context Search

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    ACS756

    Abstract: em 235 stepper em 499 stepper motor ACS712 A3930 A3986 stepper motor em 235 A3931 ACS714 UGN3177 HALF EFFECT SENSOR
    Text: Avnet Memec – The Source of Innovation www.avnet-memec.eu ALLEGRO PRODUCT SELECTOR GUIDE 2008 04/2008 www.allegromicro.com CREATE INNOVATE ACCELERATE CURRENT SENSORS ALLEGRO‘S UNI- OR BIDIRECTIONAL CURRENT SENSORS OFFER A UNIQUE SOLUTION KEY FEATURES • Very smal package size


    Original     		PDF 150Khz D-59439 PL-41-800 TR-34742 ACS756 em 235 stepper em 499 stepper motor ACS712 A3930 A3986 stepper motor em 235 A3931 ACS714 UGN3177 HALF EFFECT SENSOR