UHF AMPLIFIRE Search Results

midium power uhf transistor

Abstract: KGF2511 marking ACP
Contextual Info: This version: Oct. 1998 Previous version: — E2Q0056-18-X1 ¡ electronic components KGF2511 ¡ electronic components KGF2511 Midium Power Amplifier for UHF band GENERAL DESCRIPTION The KGF2511 is a midium power amplifier for UHF band that features high output power, high

Amplifire

Contextual Info: HITACHI 2SC4964-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features <# • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol

2SC4966

Abstract: Amplifire
Contextual Info: HITACHI 2SC4966 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features • Low Ron and high performance for RF switch. • Capable of high density mounting. <#• Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol

Contextual Info: HITACHI 2SC4905-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter

Amplifire

Contextual Info: H ITACHI 2SC4967-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK Features 4 W' • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute M aximum Ratings Ta = 25°C Item Symbol

2SC4967

Abstract: if amplifire power amplifire
Contextual Info: 2SC4967 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C

if amplifire

Abstract: 2SC4964 transistor application Amplifire
Contextual Info: 2SC4964 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C

2SC4966

Abstract: power amplifire Amplifire
Contextual Info: 2SC4966 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C

if amplifire

Abstract: 2SC4965 Amplifire
Contextual Info: 2SC4965 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C

transistor 2SC 536

Contextual Info: HITACHI 2SC4902-Silicon NPN Bipolar Transistor Application MPAK VHF & UHF wide band amplifire Features • High gain bandwidth product f j = 6 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f= 900 MHz # 1. Emitter 2. Base

Contextual Info: H ITACHI 2SC4874-Silicon NPN Bipolar Transistor Application TO-92 VHF & UHF wide band amplifire Features • High gain bandwidth product fx = 5.8 GHz typ • High gain, low noise figure PG = 10.0 dB typ, NF = 1.8 dB typ at f = 900 MHz I 1. Base

2SC4875

Contextual Info: 2SC4875 Silicon NPN Bipolar Transistor Application TO-92 VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 11.5 dB typ, NF = 1.3 dB typ at f = 900 MHz 1. Base 2. Emitter 3. Collector

if amplifire

Abstract: 2SC4874 1203 TO-92
Contextual Info: 2SC4874 Silicon NPN Bipolar Transistor Application TO-92 VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 10.0 dB typ, NF = 1.8 dB typ at f = 900 MHz 1. Base 2. Emitter 3. Collector

transistor CD 910

Contextual Info: HITACHI 2SC4901 -Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 4 • High gain bandwidth product f-p = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Emitter 2. Base

Contextual Info: HITACHI 2SC4903-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features i • High gain bandwidth product f j = 6 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter 2. Base

Contextual Info: HITACHI 2SC5050-Silicon NFN Bipolar Transistor Application V HF & UHF wide band amplifire MPAK Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 14.0 dB typ, N F = 1.1 dB typ at f = 900 MHz 1. Emitter 2. Base

transistor zo 607

Abstract: zo 607 zo 607 MA zo 107 ZO 109 2SC4995 equivalent ZO 607 transistor zo 109 ZO 103
Contextual Info: 2SC4995 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK–4 Features 4 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

2SC4899

Abstract: H 1182 amplifir
Contextual Info: 2SC4899 Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 3 • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 14.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector

2SC4926

Abstract: 2SC5051
Contextual Info: 2SC5051 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK Features 3 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 14.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector

yl 1042

Abstract: 2SC4903 ic 0941
Contextual Info: 2SC4903 Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 3 1 • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 2 1. Emitter 2. Base 3. Collector

TRANSISTOR 2SC 635

Contextual Info: HITACHI 2SC4926-Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifire Features 2 • High gain bandwidth product 3 f-p = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz t, 4 1. Collector

transistor marking YD ghz

Abstract: 2SC4926
Contextual Info: 2SC4926 Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifire Features 2 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter

zo 607

Abstract: zo 607 MA transistor zo 607 equivalent ZO 607 ZD 103 ma 2SC5080 ZD 607 ZD 103 zo 405 TRANSISTOR pc 135
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifire MPAK–4 Features 4 • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

ZO 150 74

Abstract: 2SC4901 CMA50
Contextual Info: 2SC4901 Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 3 1 • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 2 1. Emitter 2. Base 3. Collector