UHF GA AS Search Results

Contextual Info: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •

Contextual Info: 2SK2685 GaAs HEMT HITACHI ADE-208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3 V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz)

2SK2856

Abstract: transistor 4809
Contextual Info: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

2SK2856

Abstract: pi1510
Contextual Info: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz • High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5319

Contextual Info: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz · High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SK2685

Abstract: Hitachi DSA002750 ADE80
Contextual Info: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. VDS = 6 or more voltage.

2SK2685

Abstract: Hitachi DSA00117
Contextual Info: 2SK2685 GaAs HEMT Application CMPAK-4 UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.

2SK2685

Abstract: Hitachi DSA002758
Contextual Info: 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.

Hitachi DSA002750

Contextual Info: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.

ADE-208-400

Abstract: ha 1758
Contextual Info: 2SK2685 GaAs HEMT HITACHI ADE-208-400 1st. E d itio n Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. • High voltage. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)

nf 922

Contextual Info: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

2SK2685

Abstract: Hitachi DSA00384
Contextual Info: 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.

gaas Mt marking code

Contextual Info: HITACHI 2SK2685 GaAs HE MT Application CMPAK-4 UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB typ. (3 V, 10 mA, 2 GHz) • High voltage. V ds = 6 or more voltage.

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5317 2Ghz amplifier
Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5322
Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)

Contextual Info: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) + 0.2 s 2 .9 - 0.3 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.3dB f=2GHz : Ga= 11.5dB (f=2GHz) s + 0.2 2 .9 - 0 .3 MAXIMUM RATINGS (Ta = 25°C)

2SC5318

Abstract: VHF-UHF Band Low Noise Amplifier
Contextual Info: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz : Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)

2SC5318

Abstract: BB34
Contextual Info: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz : Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)

2SC5323

Abstract: Toshiba if amplifier
Contextual Info: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz :Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -fr MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ±0.1, r— r - i Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)