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    UHF SCHOTTKY DIODE Search Results

    UHF SCHOTTKY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    UHF SCHOTTKY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diodes ir10

    Abstract: ir10 diode MicroMetrics SCHOTTKY DIODES ir10 Logic Gates "Schottky Diodes" MGR700
    Text: Schottky Diodes Schottky Diodes: MGR 700 Series General Purpose Schottky Diodes Description The MicroMetrics MGR 700 series are general purpose Schottky Barrier diodes specially designed to achieve a high voltage breakdown. This series of diodes can be used in the UHF and


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    PDF MGR700 MGR701 MGR702 MGR703 MGR704 MGR705 diodes ir10 ir10 diode MicroMetrics SCHOTTKY DIODES ir10 Logic Gates "Schottky Diodes" MGR700

    diode 349A

    Abstract: S11 SCHOTTKY diode MMBD110T1 MMDL101T1 S1 DIODE schottky
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY


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    PDF MMDL101T1 diode 349A S11 SCHOTTKY diode MMBD110T1 MMDL101T1 S1 DIODE schottky

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    diode 349A

    Abstract: S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
    Text: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 diode 349A S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110

    MA707

    Abstract: marking GC diode GC marking diode
    Text: MA111 Schottky Barrier Diodes SBD MA707 Silicon epitaxial planer type For UHF mixer Unit : mm INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● Mini package, enabling down-sizing of the equipment and automatic


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    PDF MA111 MA707 MA707 marking GC diode GC marking diode

    MMDL770T1G

    Abstract: MMBD770T1 marking code 5H diode
    Text: MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features •     http://onsemi.com


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    PDF MMDL770T1G MMDL770T1/D MMDL770T1G MMBD770T1 marking code 5H diode

    MMBD770T1

    Abstract: MMDL770T1 MMDL770T1G marking code 5H diode
    Text: MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • http://onsemi.com


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    PDF MMDL770T1 MMDL770T1/D MMBD770T1 MMDL770T1 MMDL770T1G marking code 5H diode

    NTE555

    Abstract: NTE555 data sheet
    Text: NTE555 Silicon Pin Diode UHF/VHF Detector Description: The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features: D Schottky Barrier Construction Provides Stable Characteristics by Eliminating


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    PDF NTE555 NTE555 100ps 200nA NTE555 data sheet

    Untitled

    Abstract: No abstract text available
    Text: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15


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    PDF MA111 MA733

    MMBD110T1

    Abstract: MMBD330T1 MMBD770T1 diode schottky 4T
    Text: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF


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    PDF MMBD110T1/D MMBD110T1 MMBD330T1 MMBD770T1 323/SC OT-323/SC MMBD110T1/D* MMBD110T1 MMBD330T1 MMBD770T1 diode schottky 4T

    S4 DIODE schottky

    Abstract: S4 55 DIODE schottky DIODE marking S4 45 DIODE marking S4 57 5H MARKING MMBD770T1 MMDL770T1 marking S43 S43 diodes DIODE S4 Schottky SOD-323
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime


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    PDF MMDL770T1 S4 DIODE schottky S4 55 DIODE schottky DIODE marking S4 45 DIODE marking S4 57 5H MARKING MMBD770T1 MMDL770T1 marking S43 S43 diodes DIODE S4 Schottky SOD-323

    Untitled

    Abstract: No abstract text available
    Text: MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the


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    PDF MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G 323/SCâ 70/SOTâ MMBD330T1/D

    228DIA

    Abstract: NTE553 100MHZ DO35
    Text: NTE553 Schottky Barrier Diode Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: TA = +25°C unless otherwise specified Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35V


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    PDF NTE553 NTE553 100mA 150mW 100MHZ 250MHZ 228DIA 100MHZ DO35

    SMMBD330T1G

    Abstract: Schottky Diode Marking sc-70
    Text: MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the


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    PDF MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G OT-323/SC-70 SC-70/SOT-323 MMBD330T1/D SMMBD330T1G Schottky Diode Marking sc-70

    5082-2805

    Abstract: No abstract text available
    Text: 5082-2805 SCHOTTKY BARRIER DIODE DESCRIPTION: PACKAGE STYLE 01 The ASI 5082-2805 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. FEATURES: • Matched Quad Unconnected


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    5082-2804

    Abstract: No abstract text available
    Text: 5082-2804 SCHOTTKY BARRIER DIODE DESCRIPTION: PACKAGE STYLE 01 The ASI 5082-2804 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. FEATURES: • Unconnected matched pair


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    diode 349A

    Abstract: mmbd110 20 GHz schottky diode
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 OD-323 diode 349A mmbd110 20 GHz schottky diode

    diode 349A

    Abstract: 20 GHz schottky diode nf amplifier low voltage UHF schottky diode
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 diode 349A 20 GHz schottky diode nf amplifier low voltage UHF schottky diode

    Untitled

    Abstract: No abstract text available
    Text: MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • • • • • • Extremely Low Minority Carrier Lifetime


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    PDF MMDL770T1 MMBD770T1 MMBD770T1

    Untitled

    Abstract: No abstract text available
    Text: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available


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    PDF 1N5711

    DIODE AM MODULATOR

    Abstract: DOUBLE BALANCED MODULATOR quad schottky diode array
    Text: _PRELIMINARY SPECIFICATION NEC UHF MODULATOR DIODE QUAD ELECTRON DEVICE N D 4 8 7 R 2 -3 R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The N D 487R 2-3R is schottky barrier diode quad interconnected in ring con­


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    PDF 487R2-3R DIODE AM MODULATOR DOUBLE BALANCED MODULATOR quad schottky diode array

    nd487c2-3r

    Abstract: DIODE AM MODULATOR uhf modulator DOUBLE BALANCED MODULATOR ND487c2 UHF schottky diode
    Text: PRELIMINARY SPECIFICATION NEC UHF MODULATOR DIODE QUAD ELfCTRON DEVICE ND487C2-3R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The ND487C2-3R is schottky barrier diode quad interconnected in cross con­ figuration, especially designed fo r use in double balanced mixers, phase detec­


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    PDF ND487C2-3R ND487C2-3R DIODE AM MODULATOR uhf modulator DOUBLE BALANCED MODULATOR ND487c2 UHF schottky diode

    ND487R1-3R

    Abstract: DOUBLE BALANCED MODULATOR DIODE AM MODULATOR pj 50 diode pj diode nd487r13r
    Text: _ PRELIMINARY SPECIFICATION NEC UHF M O DULATOR DIODE Q U A D ELECTRON DEVICE N D 4 8 7 R 1 -3 R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The ND487R1-3R is schottky barrier diode quad interconnected in ring con­


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    PDF ND487R1-3R ND487R1-3R DOUBLE BALANCED MODULATOR DIODE AM MODULATOR pj 50 diode pj diode nd487r13r

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF


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    PDF MMBD110T1/D MMBD110T1 MMBD330T1 MMBD770T1 19A-02, OT-323/SC-70 110T1 330T1