UJT APPLICATION Search Results

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

NTE4011B

Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
Contextual Info: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance

2N6120

Abstract: applications of ujt 2N6119 PN6119 PN6119-18R PN6120 PN6120-18R PROGRAMMABLE UJT 2N6119-2N6120
Contextual Info: Data Sheet central PN6119-18R PN6120-18R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNPN SILICON PROGRAMMABLE UJT Sem iconductor Corp. JEDEC T0-92-18R CASE (AGK) Manufacturers of World Class Discrete Semiconductors

Contextual Info: SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number Case Style Diagram Number RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <pA) lE V bb Pd •e o Intrinsic Stand Off Ratio Interbase

NTE+6402

Contextual Info: SPECIAL DEVICES SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number 6400 6400A 6401 6409 6410 Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <(lA) Ie VBB Pd •eo

UJT 2N2646

Abstract: 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt ujt timer CIRCUIT applications of ujt with circuits
Contextual Info: g .— , a . Wide Range of Sensitivities S lC S lQ D 3 L 2 W D © @ •■■ ,nPu t C haracteristics fo r M o st A pplications . Industry Standards, w ith a va riety of C ustom S pecifications available. UNIJUNCTION TRANSISTORS - UJT) Device

UJT 2N2646

Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor
Contextual Info: Silicon Unidirectional Switch - SUS Similar to 4-Layer Diodes, but has gate electrode that permits synchronization. V s V olts Nom Device Type Plastic Case 29-02 I TO-92 MUS4987 M US4988 's Min. Max. 6.0 7.5 10 9.0 jUA Max. m A M ax. ^ 1.5 0.5 500 150 Unijunction Transistors - UJT

2n2646 ujt

Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
Contextual Info: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0

SCR CONTROL BY PUT CIRCUIT

Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
Contextual Info: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.

115v 400Hz with 5V DC

Abstract: SAC1763 applications of ujt UJT specification transformer 400Hz 115v 15v SACI763S14 transformer 400Hz 115v 26v 400Hz synchro to digital converter SAC1763622 pin out diagram of UJT
Contextual Info: -. Synchro/Resolver to-LinearDCConverter ANALOG W DEVICES SAC1763 FEATURES High Dynamic Performance 27,000° /sec High Accuracy (:1:11Arc-Minutes) Internal Converter Tracking Loop Provides High Noise Immunity Low Output Ripple (Less than 5mV pop) DC Output Proportional to Input Rate

ujt trigger circuit

Abstract: ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 2N6028 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028
Contextual Info: "Öl G E SOLID STATE 3875081 G E SOLID STATE DE'] 3fl7SDfll 0D1Ö01Ö t. 01E 18018 D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: Applications: • Planar Passivated Structure

2n2646 equivalent

Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

TN41A

Abstract: TN41 Unit junction transistor UJT ujt unijunction transistor
Contextual Info: PROGRAMMABLE UNIJUNCTION TRANSISTOR TN41 A,B SILICON PLANAR TYPE THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, Unit in mm PULSER AND TIMMER APPLICATIONS. FEATURES : . Programmable Item : RßB, 9 » lv and IP . low leakage Current : [GAO= 10nA(Max.) . High Pulse Output Voltage

74LV241

Abstract: 74LV241D 74LV241N 74LV241PW
Contextual Info: Philips Semiconductors _ ^_ _ Product Specification Octal buffer/line driver; 3-state FEATURES 74LV241 QUICK REFERENCE DATA GND = 0 V ; T ^ = 25 °C; tr = %<, 2.5 ns DESCRIPTION The 74LV241 a low-voltage Si-gate CMOS device and is pin and

TN41

Abstract: TN41A
Contextual Info: TOSHIBA TN41AJN41B TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR TN41A SILICON PLANAR TYPE TNZL1R THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm APPLICATIONS ¿5.1 M AX. • Low Leakage Current : lG A O ~ l^ n^- Max. I(^Kg = 100nA (Max.)

transistor 123 DL

Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
Contextual Info: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current

TN41A

Abstract: TN-41A
Contextual Info: TN41 A,TN41 B TO SHIBA TOSHIBA PRO GA M M ABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE TN41A, TN41B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIM ER U nit in mm APPLICATIONS {¡5.1 M A X • Low Leakage Current : lQAO = 10nA Max. IGKS = lOOnA (Max.)

TO206AA

Abstract: 2N4948 ujt trigger circuit IN3911 1N3691 206-AA ujt timer CIRCUIT 2N4948 JAN motorola eb20
Contextual Info: 4bE D • b3b?254 GG^bflM b « M O T b MOTOROLA SC XSTRS/R F MIL-Qualified Products (continued) Rectifiers Fast recovery power rectifiers providing high efficiency at frequencies up to 250 kHz. R-suffix indicates reverse polarity. All are available with JAN and JTX classification.

74hc245ap

Abstract: 74HC244AP 62004p TB62701 TB62705BF ac drive circuit diagram
Contextual Info: TOSHIBA 7.3 [3 ] Explanations LED Lamp Application Circuit Since the light output of an LED lamp depends on the LED’s forward current I f , functions such as light output on/off can be implemented easily using forward current control. This section describes typical methods of light control, such as DC drive, pulse drive and

2PS0800R12KE3-2G

Contextual Info: Technical Information 2PS0800R12KE3-2G PrimeSTACK Vorläufige Daten preliminary data Key data 1x 445A AC at 400V AC, forced air fan not implemented General information for: Stacks for various inverter application. Semiconductors, heat sinks, drivers and sensors included.

2N4947

Abstract: 2N4948 2n3980 2N4949 equivalent diode for 1n457 1N457 equivalent ujt free
Contextual Info: TYPES h t 2N4947 THRU 2N4949 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T I N NO. D L-S 7 3 9 5 6 5, M A R C H 1 9 6 7 - R E V I S E D M A R C H 1973 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A W IDE RANGE OF M ILITARY, SPA C E ,A N D INDUSTRIAL APPLICATIONS:

UJT APPLICATION

Contextual Info: 8 DRAWING MADE THIS 7 4 IN TH IRD ANGLE PR O JEC TIO N DRAWING IS UNPUBLISHED COPYRIGHT 19 RELEASED BY AMP FOR LOC PUBLICATION INCORPORATED. ALL D IST AD INTERNATIO NAL RIGHTS RESERVED. REVISIO NS 25 ZONE LTR C HOUSING MA T E R I A L : POST MA T E R I A L :

Contextual Info: 8 DRAWING MADE 7 4 IN TH IRD ANGLE PR O JEC TIO N THIS DRAWING IS UNPUBLISHED COPYRIGHT 19 LOC RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL D IST AD INTERNATIO NAL RIGHTS RESERVED. REVISIONS 25 ZONE LTR D ES C R IPTIO N EC 0 5 0 4 - 0 0 5 2 - 9 6 C

2N4949

Abstract: 2N4947 2N3980 2N4948 unijunction
Contextual Info: TYPES 2N3980, IMS&l thru 2^4949 P-N PLANAR SILICON UNUUNCTION TRANSISTORS B U L L E T IN NO . D L -S 739565, M A R C H 1 9 6 7 - R E V IS E D M A R C H 1973 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF MILITARY, SPACE,AND INDUSTRIAL APPLICATIONS: