ULTRA HIGH VOLTAGE HEXFETS Search Results

IRL2505

Abstract: IRL2505 equivalent IRFI840G IRLI2505 EQUIVALENT OF IRL2505
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLI2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm

irf3205 DRIVER

Abstract: IRF3205 equivalent IRFI3205 IRF3205 IRFI840G b 1370
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1374 IRFI3205 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

IRFI1310G

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature

k d718

Abstract: d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC
Contextual Info: PD-9.1208 International [mîr] Rectifier IRFI840GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated

IRFI1310G

Contextual Info: PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature VDSS = 100V RDS on = 0.04Ω

IRF3205 IR

Contextual Info: PD - 9.1374B International IG R Rectifier IRFI3205 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

IRL2910

Abstract: IRLI2910 IRL2910 equivalent
Contextual Info: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description

Contextual Info: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description

IRL2910

Abstract: IRLI2910 yb 27 BR MOSFET
Contextual Info: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description

Contextual Info: PD - 9.1320B International IG R Rectifier IRLI3803 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm

Contextual Info: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated

IRF3205 equivalent

Contextual Info: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: International [ragRectifier PD — IRLI2505 PRELIMINARY H EXFET^ Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

IRLI2203G

Abstract: tip 37a
Contextual Info: PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS on Specified at VGS=5.0V & 10V VDSS = 30V RDS(on) = 0.010Ω

IRLI2203G

Abstract: tip 37a
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS on Specified at VGS=5.0V & 10V

IRF3205 equivalent

Abstract: driver for IRF3205 IRF3205 irf3205 data Ultra High Voltage Hexfets
Contextual Info: PD - 95040 IRFI3205PbF Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V

irf3205 DRIVER

Contextual Info: PD - 95040A IRFI3205PbF Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V

IRF3205 equivalent

Abstract: IRF3205 irf3205 DRIVER IRF3205 TO-220 Ultra High Voltage Hexfets
Contextual Info: PD - 95040 IRFI3205PbF Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V

IRF 042

Abstract: irf 540 mosfet IRL3803 IRLI3803
Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IOR 336

Abstract: marking code AAAE IRFI740GLC IRFI840G marking AAAE
Contextual Info: PD-9.1209 International S Rectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

sd55a

Contextual Info: International leg Rectifier PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive PDS on Specified at VGs = 5 0 V & 10V

Contextual Info: PD-9.1209 International J3R R ectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

Equivalent IRF 44

Abstract: ultra low igss pA IRL2505 IRLI2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IRFZ48V

Contextual Info: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V