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    ULTRA HIGH VOLTAGE HEXFETS Search Results

    ULTRA HIGH VOLTAGE HEXFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA HIGH VOLTAGE HEXFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL2505

    Abstract: IRL2505 equivalent IRFI840G IRLI2505 EQUIVALENT OF IRL2505
    Text: Previous Datasheet Index Next Data Sheet PD - _ IRLI2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm


    Original     		PDF IRLI2505 IRL2505 IRL2505 equivalent IRFI840G IRLI2505 EQUIVALENT OF IRL2505

    irf3205 DRIVER

    Abstract: IRF3205 equivalent IRFI3205 IRF3205 IRFI840G b 1370
    Text: Previous Datasheet Index Next Data Sheet PD 9.1374 IRFI3205 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    Original     		PDF IRFI3205 O-220 irf3205 DRIVER IRF3205 equivalent IRFI3205 IRF3205 IRFI840G b 1370

    IRFI1310G

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature


    Original     		PDF IRFI1310G O-220 IRFI1310G

    IRFI1310G

    Abstract: No abstract text available
    Text: PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature VDSS = 100V RDS on = 0.04Ω


    Original     		PDF IRFI1310G O-220 IRFI1310G

    IRL2910

    Abstract: IRLI2910 IRL2910 equivalent
    Text: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description


    Original     		PDF 1384B IRLI2910 IRL2910 IRLI2910 IRL2910 equivalent

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description


    Original     		PDF 1384B IRLI2910

    IRL2910

    Abstract: IRLI2910 yb 27 BR MOSFET
    Text: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description


    Original     		PDF 1384B IRLI2910 IRL2910 IRLI2910 yb 27 BR MOSFET

    IRLI2203G

    Abstract: tip 37a
    Text: PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS on Specified at VGS=5.0V & 10V VDSS = 30V RDS(on) = 0.010Ω


    Original     		PDF IRLI2203G O-220 IRLI2203G tip 37a

    IRF3710

    Abstract: IRFI3710 irf3710 equivalent
    Text: Previous Datasheet Index Next Data Sheet PD 9.1387 PRELIMINARY IRFI3710 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated


    Original     		PDF IRFI3710 IRF3710 IRFI3710 irf3710 equivalent

    IRLI2203G

    Abstract: tip 37a
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS on Specified at VGS=5.0V & 10V


    Original     		PDF IRLI2203G O-220 IRLI2203G tip 37a

    IRF3205 equivalent

    Abstract: driver for IRF3205 IRF3205 irf3205 data Ultra High Voltage Hexfets
    Text: PD - 95040 IRFI3205PbF Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V


    Original     		PDF IRFI3205PbF O-220 IRF3205 equivalent driver for IRF3205 IRF3205 irf3205 data Ultra High Voltage Hexfets

    irf3205 DRIVER

    Abstract: No abstract text available
    Text: PD - 95040A IRFI3205PbF Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V


    Original     		PDF 5040A IRFI3205PbF O-220 irf3205 DRIVER

    IRF3205 equivalent

    Abstract: IRF3205 irf3205 DRIVER IRF3205 TO-220 Ultra High Voltage Hexfets
    Text: PD - 95040 IRFI3205PbF Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V


    Original     		PDF IRFI3205PbF O-220 IRF3205 equivalent IRF3205 irf3205 DRIVER IRF3205 TO-220 Ultra High Voltage Hexfets

    IRF 042

    Abstract: irf 540 mosfet IRL3803 IRLI3803
    Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		PDF 1320B IRLI3803 O-220 IRF 042 irf 540 mosfet IRL3803 IRLI3803

    IRFZ48V

    Abstract: No abstract text available
    Text: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V


    Original     		PDF PD-94834 IRFIZ48VPbF O-220 IRFZ48V

    k d718

    Abstract: d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC
    Text: PD-9.1208 International [mîr] Rectifier IRFI840GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated


    OCR Scan     		PDF IRFI840GLC D-6380 k d718 d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC

    IRF3205 IR

    Abstract: No abstract text available
    Text: PD - 9.1374B International IG R Rectifier IRFI3205 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1320B International IG R Rectifier IRLI3803 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated


    OCR Scan     		PDF IRFIBC40GLC D-6380

    IRF3205 equivalent

    Abstract: No abstract text available
    Text: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    OCR Scan     		PDF IRFI3205 0D2454T IRF3205 equivalent

    Untitled

    Abstract: No abstract text available
    Text: International [ragRectifier PD — IRLI2505 PRELIMINARY H EXFET^ Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm


    OCR Scan     		PDF IRLI2505

    IOR 336

    Abstract: marking code AAAE IRFI740GLC IRFI840G marking AAAE
    Text: PD-9.1209 International S Rectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


    OCR Scan     		PDF IRFI740GLC D-6380 6172-3706a IOR 336 marking code AAAE IRFI740GLC IRFI840G marking AAAE

    sd55a

    Abstract: No abstract text available
    Text: International leg Rectifier PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive PDS on Specified at VGs = 5 0 V & 10V


    OCR Scan     		PDF IRLI2203G 52ACD 10-02Tan 0316Tel: sd55a

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1209 International J3R R ectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


    OCR Scan     		PDF IRFI740GLC D-6380