ULTRA LOW GATE CHARGE Search Results
ULTRA LOW GATE CHARGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MYC0409-NA-EVM | Murata Manufacturing Co Ltd | 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board |
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| LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
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| LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT |
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| LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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| LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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ULTRA LOW GATE CHARGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STS5N15M3 N-channel 150V - 45mΩ - 4.5A - SO-8 Ultra low gate charge MDmesh III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STS5N15M3 150V <0.057Ω 4.5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance |
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STS5N15M3 STS5N15M3 | |
JESD97Contextual Info: STSJ25N15M3 N-channel 150V - 45mΩ - 5A - PowerSO-8 Ultra low gate charge MDmesh™ III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STSJ25N15M3 150V <0.057Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance |
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STSJ25N15M3 JESD97 | |
MDMESH
Abstract: STS5N15M3 JESD97
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STS5N15M3 MDMESH STS5N15M3 JESD97 | |
JESD97
Abstract: STS5N15M3
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STS5N15M3 JESD97 STS5N15M3 | |
PI5101Contextual Info: PI5101 RDS on FETTM Series 360μΩ, 5V/60A N-Channel MOSFET Product Summary Features Ultra Low “micro-Ohm” RDS(on) Extremely Low Gate Charge Very Low Gate Resistance High Density, Low Profile Very Low Package Inductance Low Thermal Resistance |
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PI5101 V/60A 60ADC PI5101 PI5101-00-LGIZ | |
APT94N65B2C3
Abstract: APT94N65B2C3G APT94N65B2
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APT94N65B2C3 APT94N65B2C3G* APT94N65B2C3S O-247 APT94N65B2C3 APT94N65B2C3G APT94N65B2 | |
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Contextual Info: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated |
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APT97N65B2C6 APT97N65LC6 O-264 APT97N65B2 O-247 | |
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Contextual Info: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated |
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APTC60HM70RT3G | |
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Contextual Info: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated |
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APTC60HM70RT3G | |
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Contextual Info: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70m max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated |
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APTC60HM70RT3G | |
SIPC03N60S5Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5 |
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SIPC03N60S5 80mm2 5343N, SIPC03N60S5 | |
SIPC05N60S5Contextual Info: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5 |
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SIPC05N60S5 5313N, SIPC05N60S5 | |
SIPC03N60S5Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5 |
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SIPC03N60S5 80mm2 5343S, SIPC03N60S5 | |
SIPC14N60S5Contextual Info: Preliminary SIPC14N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60S5 |
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SIPC14N60S5 Q67050-A4093 5363S, SIPC14N60S5 | |
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sp*20n60c3
Abstract: SPD06S60
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APT20N60BC3 APT20N60SC3 O-247 O-247 Le113) sp*20n60c3 SPD06S60 | |
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Contextual Info: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D |
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APT47N60BC3 APT47N60SC3 O-247 O-247 | |
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Contextual Info: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg |
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APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* O-247 | |
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Contextual Info: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package |
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APT20N60BC3 APT20N60SC3 O-247 O-247 APT17N80BC3 | |
SIPC69N60C2Contextual Info: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2 |
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SIPC69N60C2 Q67050A4073-A001 5443-N, SIPC69N60C2 | |
SIPC26N60C2Contextual Info: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2 |
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SIPC26N60C2 Q67050A4087-A001 5433N, SIPC26N60C2 | |
SIPC10N60S5Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5 |
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SIPC10N60S5 Q67050A4072-A001 5353-N, SIPC10N60S5 | |
SIPC10N60C2Contextual Info: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2 |
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SIPC10N60C2 Q67050A4090-A001 5353P, SIPC10N60C2 | |
SIPC06N60S5
Abstract: Infineon CoolMOS
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SIPC06N60S5 5423N, SIPC06N60S5 Infineon CoolMOS | |
5423S
Abstract: SIPC06N60S5
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SIPC06N60S5 5423S, 5423S SIPC06N60S5 | |