ULTRA LOW IDSS Search Results

ultra low igss pA

Abstract: ultra low igss LS831 LS830 LS832 LS833
Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.

ultra low igss pA mosfet

Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.

ULTRA LOW NOISE N-CHANNEL JFET

Abstract: Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"
Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1

ultra low igss pA

Abstract: LS845 LS843 LS844 MONOLITHIC DUAL N-CHANNEL JFET SSG11
Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1

ultra low igss pA

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1

LS845

Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71

Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

replacement 2sk170

Abstract: 2sk170 ultra low idss LSK170 Toshiba 2SK170 2SK170 to92 low noise low frequency JFET frequency guitar IF4500 audio mixer
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Systems replaces discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is an Ultra Low Noise Single N-Channel JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 /

Contextual Info: CSD17381F4 SLPS411C – APRIL 2013 – REVISED FEBRUARY 2014 CSD17381F4, 30 V N-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd Low Threshold Voltage Ultra-Small Footprint 0402 Case Size

Contextual Info: CSD25483F4 www.ti.com SLPS449 – OCTOBER 2013 20V, P-Channel NexFET Power MOSFETs Check for Samples: CSD25483F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size

Contextual Info: CSD25483F4 www.ti.com SLPS449 – OCTOBER 2013 20V, P-Channel NexFET Power MOSFETs Check for Samples: CSD25483F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size

Contextual Info: CSD23381F4 www.ti.com SLPS450 – OCTOBER 2013 12V, P-Channel NexFET Power MOSFETs Check for Samples: CSD23381F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size

Contextual Info: CSD25483F4 www.ti.com SLPS449 – OCTOBER 2013 20V, P-Channel NexFET Power MOSFETs Check for Samples: CSD25483F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size

Contextual Info: CSD23381F4 www.ti.com SLPS450 – OCTOBER 2013 12V, P-Channel NexFET Power MOSFETs Check for Samples: CSD23381F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size

ATF-36077-STR

Abstract: 5965-8726E
Contextual Info: Thal H E W L E T T mLEm P A C K A R D 2 -1 8 GHz Ultra Low N oise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT T echnology • Ultra-Low N o ise Figure: Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor

ATF-36077

Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
Contextual Info: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.

Contextual Info: CSD23381F4 SLPS450B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD23381F4, 12 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size

Contextual Info: CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD25483F4, 20 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size

Contextual Info: CSD25481F4 SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014 CSD25481F4, 20 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size

Contextual Info: CSD23381F4 SLPS450B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD23381F4, 12 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size

Contextual Info: CSD25483F4 SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD25483F4, 20 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size

Contextual Info: CSD25481F4 www.ti.com SLPS420 – SEPTEMBER 2013 20V, P-Channel NexFET Power MOSFETs Check for Samples: CSD25481F4 PRODUCT SUMMARY FEATURES 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size

Contextual Info: CSD25481F4 SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014 CSD25481F4, 20 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size