2SC5741
Abstract: 09 18 514 7813 2SC5741-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5741 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION
|
Original
|
PDF
|
2SC5741
2SC5741-T1
2SC5741
09 18 514 7813
2SC5741-T1
|
2SC5675
Abstract: 2SC5675-T1 APPLICATION OF IC 7492
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5675 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION
|
Original
|
PDF
|
2SC5675
2SC5675-T1
2SC5675
2SC5675-T1
APPLICATION OF IC 7492
|
2SC5599
Abstract: 2SC5599-T1 marking TV transistor 2SC5599
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package t = 0.75 mm
|
Original
|
PDF
|
2SC5599
2SC5599-T1
2SC5599
2SC5599-T1
marking TV
transistor 2SC5599
|
marking NEC rf transistor
Abstract: nec npn rf
Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over
|
Original
|
PDF
|
NE662M03
NE662M03
NE662M03-T1
marking NEC rf transistor
nec npn rf
|
nec 14308
Abstract: 2SC5736 2FB100 2SC5736-T1 c 2579 power transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5736
2SC5736-T1
nec 14308
2SC5736
2FB100
2SC5736-T1
c 2579 power transistor
|
IC 7414 in capacitance meter
Abstract: 2SC5676 2SC5676-T1 NEC 2532
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5676
2SC5676-T1
IC 7414 in capacitance meter
2SC5676
2SC5676-T1
NEC 2532
|
transistor nec 8772
Abstract: nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5800
2SC5800-T1
transistor nec 8772
nec 8772 transistor
NEC transistor 8772
2SC5800
nec 8772
transistor zo 607
2SC5800-T1
nec 2035 728
8772 nec transistor
|
nec 14305
Abstract: 2SC5745-T1 2SC5745 24 6407 052 021 888
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5745 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5745
2SC5745-T1
nec 14305
2SC5745-T1
2SC5745
24 6407 052 021 888
|
2SC5737
Abstract: 2SC5737-T1 nec 2501 852 c 5929 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for VCO applications • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5737
2SC5737-T1
2SC5737
2SC5737-T1
nec 2501 852
c 5929 transistor
|
NESG210719
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
|
Original
|
PDF
|
NESG210719
NESG210719
NESG210719-A
NESG210719-T1
NESG210719-T1-A
PU10419EJ03V0DS
|
2SC5606
Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
|
Original
|
PDF
|
2SC5606
2SC5606-T1
2SC5606
transistor 3504 nec
2SC5606-T1
NEC JAPAN 3504
|
2SC5606
Abstract: 2SC5606-T1 ic ta 7698
Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
|
Original
|
PDF
|
2SC5606
2SC5606-T1
2SC5606
2SC5606-T1
ic ta 7698
|
NEC semiconductor
Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
|
Original
|
PDF
|
NESG210719
NESG210719-T1-A
NESG210719-T1
NESG210719-A
NEC semiconductor
NEC JAPAN
marking NEC rf transistor
nec npn rf
NESG210719
NESG210719-T1
transistor RF S-parameters
NEC D7
|
NESG210719
Abstract: NESG210719-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
|
Original
|
PDF
|
NESG210719
NESG210719-A
NESG210719-T1-A
NESG210719-T1
NESG210719
NESG210719-T1
|
|
|
nec 2741
Abstract: nec a 634 2SC5007 2SC5433 2SC5433-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5433
2SC5007
2SC5433-T1
nec 2741
nec a 634
2SC5007
2SC5433
2SC5433-T1
|
2SC5010
Abstract: 2SC5435 2SC5435-T1 marking tk
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5435
2SC5010
2SC5435-T1
2SC5010
2SC5435
2SC5435-T1
marking tk
|
2SC5186
Abstract: 2SC5436 2SC5436-T1 nec 7440
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5436
2SC5186
2SC5436-T1
2SC5186
2SC5436
2SC5436-T1
nec 7440
|
2SC5432-T1
Abstract: 2SC5006 2SC5432
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5432
2SC5006
2SC5432-T1
2SC5432-T1
2SC5006
2SC5432
|
ic 4074
Abstract: 2SC5437 2SC5195 2SC5437-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5195 • Flat-lead 3-pin thin-type ultra super minimold package
|
Original
|
PDF
|
2SC5437
2SC5195
2SC5437-T1
ic 4074
2SC5437
2SC5195
2SC5437-T1
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON RF TRANSISTOR NE68719 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
|
Original
|
PDF
|
NE68719
NE68719-A
NE68719-T1-A
PU10213EJ01V0DS
|
NE68719
Abstract: NE68719-T1-A
Text: NPN SILICON RF TRANSISTOR NE68719 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
|
Original
|
PDF
|
NE68719
NE68719-A
NE68719-T1-A
NE68719
|
pu102
Abstract: 2SC5186-T1 RF NPN POWER TRANSISTOR 3 GHZ 2SC5186 nec microwave marking 86
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
|
Original
|
PDF
|
2SC5186
2SC5186-T1
pu102
2SC5186-T1
RF NPN POWER TRANSISTOR 3 GHZ
2SC5186
nec microwave
marking 86
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
|
Original
|
PDF
|
NESG204619
NESG204619-A
NESG204619-T1-A
PU10465EJ01V0DS
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —
|
OCR Scan
|
PDF
|
MRF587
MRF587
|
