ULTRA LOW NOISE NPN TRANSISTOR Search Results

2SC5741

Abstract: 09 18 514 7813 2SC5741-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5741 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION

2SC5675

Abstract: 2SC5675-T1 APPLICATION OF IC 7492
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5675 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION

2SC5599

Abstract: 2SC5599-T1 marking TV transistor 2SC5599
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package t = 0.75 mm

marking NEC rf transistor

Abstract: nec npn rf
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over

nec 14308

Abstract: 2SC5736 2FB100 2SC5736-T1 c 2579 power transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package

IC 7414 in capacitance meter

Abstract: 2SC5676 2SC5676-T1 NEC 2532
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package

transistor nec 8772

Abstract: nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package

nec 14305

Abstract: 2SC5745-T1 2SC5745 24 6407 052 021 888
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5745 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package

2SC5737

Abstract: 2SC5737-T1 nec 2501 852 c 5929 transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for VCO applications • Flat-lead 3-pin thin-type ultra super minimold package

NESG210719

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

2SC5606

Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold

2SC5606

Abstract: 2SC5606-T1 ic ta 7698
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold

NEC semiconductor

Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

NESG210719

Abstract: NESG210719-T1
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

nec 2741

Abstract: nec a 634 2SC5007 2SC5433 2SC5433-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package

2SC5010

Abstract: 2SC5435 2SC5435-T1 marking tk
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

2SC5186

Abstract: 2SC5436 2SC5436-T1 nec 7440
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package

2SC5432-T1

Abstract: 2SC5006 2SC5432
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package

ic 4074

Abstract: 2SC5437 2SC5195 2SC5437-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5195 • Flat-lead 3-pin thin-type ultra super minimold package

Contextual Info: NPN SILICON RF TRANSISTOR NE68719 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

NE68719

Abstract: NE68719-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE68719 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

pu102

Abstract: 2SC5186-T1 RF NPN POWER TRANSISTOR 3 GHZ 2SC5186 nec microwave marking 86
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —