ULTRA LOW POWER MOSFET FAST SWITCHING Search Results

SHD225623

Abstract: max3090
Contextual Info: SHD225623 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4144, REV. - HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS ON FEATURES: œ 200 Volt, 0.03 Ohm, 90A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Ultra Low RDS (on) MAXIMUM RATINGS

SHD225623

Contextual Info: SHD225623 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4144, REV. - HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS ON FEATURES: œ 200 Volt, 0.03 Ohm, 90A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Ultra Low RDS (on) MAXIMUM RATINGS

AF8958C

Abstract: P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET
Contextual Info: AF8958C N and P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low Gate Charge - Fast Switching Speed - RoHS Compliant The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

4935p

Contextual Info: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

4910n

Abstract: PN channel MOSFET 10A
Contextual Info: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

4920n

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
Contextual Info: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

PN channel MOSFET 10A

Abstract: 4910N AF4910N
Contextual Info: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

4935P

Abstract: AF4935P
Contextual Info: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1  FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )

9945n

Abstract: 9945n mosfet
Contextual Info: AF9945N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Single Drive Requirement - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

9945n

Abstract: 9945n mosfet AF9945N If 9945n
Contextual Info: AF9945N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Single Drive Requirement - Surface Mount Package The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

UT2302

Abstract: 114 c
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

UT2309L

Abstract: UT2309-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2306 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

UT2306

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2306 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

UT2302

Abstract: UT2302-AE3-R UT2302L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell,. with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2309A Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309A is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

list of n channel power mosfet

Abstract: UT2308 UY SOT-23 ultra low power mosfet fast switching UT2308L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2308 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ 1 DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.