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    ULTRAVIOLET LED Search Results

    ULTRAVIOLET LED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP610DI-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DC-25 Rochester Electronics LLC UV PLD, 27ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DC-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP910DI-35 Rochester Electronics LLC UV PLD, 38ns, CMOS, CDIP40, WINDOWED, CERDIP-40 Visit Rochester Electronics LLC Buy
    EP610DC-35 Rochester Electronics LLC UV PLD, 37ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy

    ULTRAVIOLET LED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUS304-CSP

    Abstract: XW41 F3UV F32-300 SUS304CSP measurement sensor illumination intensity F3UV-A30 AB-277 ab276
    Text: F3UV 2002 .FM Seite 274 Dienstag, 26. März 2002 10:57 22 Ultraviolet power monitor/illumination monitor Monitoring output state of UV (ultraviolet light)/illumination light source ce Features Optical Fiber Type Can be used as ultraviolet power monitor/illumination monitor


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    PDF SUS303) F32-300, F32-70 F39-FU1M AB-290 C3604 SUS304) SUS304-CSP XW41 F3UV F32-300 SUS304CSP measurement sensor illumination intensity F3UV-A30 AB-277 ab276

    HUVL400-510

    Abstract: HUVL400-520 HUVL400-530 530 transistor
    Text: HUVL400-5x0 Ultraviolet LEDs • Features Ultraviolet Light Emitting Diode 400nm 5mm Diameter Clear Epoxy Package Three Emission Angles Available ■ Absolute Maximum Ratings Ta = 25oC Parameter Pulsed forward current (t ≤ 10ms) Duty cycle 1/10 Forward current


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    PDF HUVL400-5x0 400nm HUVL400-510 HUVL400-520 HUVL400-530 HUVL400-510 HUVL400-520 HUVL400-530 530 transistor

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP AP3216UVC ULTRAVIOLET Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The source color devices are made with InGaN on !LOW POWER CONSUMPTION. SiC Light Emitting Diode. !WIDE VIEWING ANGLE. This device radiates intense ultraviolet UV light


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    PDF AP3216UVC DSAC0545 NOV/20/2002 AP3216UVC

    C405MB290-S0100

    Abstract: OS1600 405nm LED C400MB290-S0100 C395MB290-0103 C395MB290-0104 C395MB290-S0100 C405MB290-0103 C405MB290-0104 cree ultraviolet
    Text: G•SiC Technology MegaBright LEDs CxxxMB290-S0100 Features • Applications MegaBright LED Performance – 9.0mW min 395nm Ultraviolet – 10.0mW min (405nm) Ultraviolet • Single Wire Bond Structure • Class I ESD Rating • White LEDs • Counterfeit Bill Detection


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    PDF CxxxMB290-S0100 395nm) 405nm) specificatiS0100 MB290: CxxxMB290-S0100) CxxxMB290-01xx) C395MB290-S0100 C395MB290-0103 C405MB290-S0100 C405MB290-S0100 OS1600 405nm LED C400MB290-S0100 C395MB290-0103 C395MB290-0104 C395MB290-S0100 C405MB290-0103 C405MB290-0104 cree ultraviolet

    254 nm uv LED

    Abstract: 308-311nm UV LED 280NM UV-B LED UV-c LED UV led 280 nm peak mW UV diode 280 nm UV LED 280 nm UV led 200 nm peak uvc LED
    Text: Ultravoilet UV Products Ultraviolet Ultraviolet electromagnetic radiation, commonly known as UV, is currently employed in many industries and applications. The emerging UV LEDs will be an enabling, competitive technology that drives new and innovative applications.


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    PDF CC-0902-01 254 nm uv LED 308-311nm UV LED 280NM UV-B LED UV-c LED UV led 280 nm peak mW UV diode 280 nm UV LED 280 nm UV led 200 nm peak uvc LED

    W7104UVC

    Abstract: No abstract text available
    Text: T-1 3mm SOLID STATE LAMP W7104UVC Features lHIGH Description PERFORMANCE. l SUITABLE ULTRAVIOLET FOR AUTOMOTIVE DASHBOARD LIGHTING,WHITE LEDS AND BACKLIGHTING. The source color devices are made with InGaN on SiC Light Emitting Diode. This device radiates intense ultraviolet (UV) light when


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    PDF W7104UVC DSAD2148 APR/15/2003 W7104UVC

    C395-XB290-E400-B

    Abstract: UV led 220 nm peak silicon carbide LED cree uv LED hysol OS4000 epoxy C395-XB290-E400-A C405-XB290-E400-A C405-XB290-E400-B C460-XB290-E1000-A C460-XB290-E1000-B
    Text: G•SiC Technology XBright LEDs CXXX-XB290-EXXXX-X ® The Leader in Silicon Carbide Solid State Technology Features Applications • XBright™ • Outdoor LED Video Displays • High Performance – 16.0 mW 395nm Ultraviolet – 17.0 mW (405nm) Ultraviolet


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    PDF CXXX-XB290-EXXXX-X 395nm) 405nm) 460nm) 470nm) 505nm) 527nm) C395-XB290-E400-B UV led 220 nm peak silicon carbide LED cree uv LED hysol OS4000 epoxy C395-XB290-E400-A C405-XB290-E400-A C405-XB290-E400-B C460-XB290-E1000-A C460-XB290-E1000-B

    HUVL400-510b

    Abstract: HUVL400-520B HUVL400-530B huvl400 Hero Electronics
    Text: HUVL400-5x0B High Power Ultraviolet LEDs • Features Ultraviolet Light Emitting Diode 400nm 5mm Diameter Clear Epoxy Package Three Emission Angles Available Higher Output Power ■ Absolute Maximum Ratings Ta = 25oC Parameter Pulsed forward current (t ≤ 10ms) Duty cycle 1/10


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    PDF HUVL400-5x0B 400nm HUVL400-510B HUVL400-520B HUVL400-530B 3VL400-530B HUVL400-510b HUVL400-520B HUVL400-530B huvl400 Hero Electronics

    L-7104UVC

    Abstract: No abstract text available
    Text: T-1 3mm SOLID STATE LAMP L-7104UVC ULTRAVIOLET Features Description !HIGH The source color devices are made with InGaN on SiC PERFORMANCE. ! SUITABLE FOR AUTOMOTIVE DASHBOARD LIGHTING,WHITE LEDS AND BACKLIGHTING. Light Emitting Diode. This device radiates intense ultraviolet (UV) light when


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    PDF L-7104UVC DSAA8301 MAR/09/2003 L-7104UVC

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm ROUND LED LAMP W2523UVC ULTRAVIOLET Features Description !OUTSTANDING MATERIAL EFFICIENCY. The source color devices are made with InGaN on SiC !RELIABLE AND RUGGED. Light Emitting Diode. !I.C. COMPATIBLE. This device radiates intense ultraviolet (UV) light when


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    PDF W2523UVC DSAB0201 SEP/11/2002

    HUVL400-320B

    Abstract: HERO ELECTRONICS LIMITED HUVL400-320 ifm is 3002 diode 3002
    Text: HUVL400-320x 3mm Ultraviolet LEDs • Features Ultraviolet Light Emitting Diode 400nm 3mm Diameter Clear Epoxy Package Two Power Levels Available ■ Absolute Maximum Ratings Ta = 25oC Parameter Pulsed forward current (t ≤ 10ms) Duty cycle 1/10 Forward current


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    PDF HUVL400-320x 400nm HUVL400-320 HUVL400-320B HUVL400-320B HERO ELECTRONICS LIMITED HUVL400-320 ifm is 3002 diode 3002

    Untitled

    Abstract: No abstract text available
    Text: 1.6x0.8mm SMD CHIP LED LAMP AP1608UVC ULTRAVIOLET Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The source color devices are made with InGaN !LOW on SiC Light Emitting Diode. POWER CONSUMPTION. !WIDE VIEWING ANGLE. This device radiates intense ultraviolet UV light


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    PDF AP1608UVC DSAC1186 DEC/03/2002 AP1608UVC

    YA-UV5N30N

    Abstract: uv water purifier AL 2001 diode led uv ULTRAVIOLET LED transistor YA
    Text: YOLightTM ULTRAVIOLET LED Lamp YA-UV5N30N YolDal Y A Yolight Product Code - UV Ultraviolet Innovation Power FEATURES series 5 N 30 N Size Shape Angle 2θ ½ Stand-Off 5 mm Normal 30° No APPLICATIONS Highly Radiant Intensity Counterfeit Detection SiC Technology Chip


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    PDF YA-UV5N30N T-13/4 YA-UV5N30N uv water purifier AL 2001 diode led uv ULTRAVIOLET LED transistor YA

    C405MB290-0103

    Abstract: C395MB290-0103 C395MB290-0104 C395MB290-S0100 C405MB290-S0100 405nm LED
    Text: G•SiC Technology MegaBright LEDs Cxxx-MB290-S0100 Features • Applications MegaBright Performance – 9.0mW min 395nm Ultraviolet – 10.0mW min (405nm) Ultraviolet • Single Wire Bond Structure • Class I ESD Rating • White LEDs • Counterfeit Bill Detection


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    PDF Cxxx-MB290-S0100 395nm) 405nm) MB290: Cxxx-MB290-S0100) Cxxx-MB290-01xx) C395MB290-S0100 C395MB290-0103 C405MB290-S0100 C405MB290-0103 C395MB290-0103 C395MB290-0104 C395MB290-S0100 C405MB290-S0100 405nm LED

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm ROUND LED LAMP L2523UVC ULTRAVIOLET Features Description !OUTSTANDING MATERIAL EFFICIENCY. The source color devices are made with InGaN on SiC !RELIABLE AND RUGGED. Light Emitting Diode. !I.C. COMPATIBLE. This device radiates intense ultraviolet (UV) light when


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    PDF L2523UVC DSAB0201 SEP/11/2002

    ET100

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP AP2012UVC Features Description ! 2.0mmx1.25mm ! LOW ! WIDE SMT LED, 1.1mm THICKNESS. POWER CONSUMPTION. VIEWING ANGLE. ! PACKAGE ULTRAVIOLET The source color devices are made with InGaN on SiC Light Emitting Diode. This device radiates intense ultraviolet UV light


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    PDF AP2012UVC DSAC2300 JAN/22/2003 AP2012UVC ET100

    UV LED

    Abstract: No abstract text available
    Text: LTR REVISION - DATE RELEASED 03-10-00 APPD JCH ULTRAVIOLET LIGHT SAFETY PROCEDURE INSPECTORS AND OTHER PERSONS VIEWING ULTRAVIOLET LIGHT MUST WEAR PROPER PROTECTIVE EYEWEAR WILLSON UV GLASSES PART # F117501 ! CAUTION This UV LED during operation radiates intense UV light.


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    PDF F117501 ANSI-Y14 QA0028 8Z410 UV LED

    Untitled

    Abstract: No abstract text available
    Text: G•SiC Technology MegaBright LEDs CxxxMB290-S0100 Features • Applications MegaBright LED Performance – 9.0mW min 395nm Ultraviolet – 10.0mW min (405nm) Ultraviolet • Single Wire Bond Structure • Class I ESD Rating • White LEDs • Counterfeit Bill Detection


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    PDF CxxxMB290-S0100 395nm) 405nm) eS0100 MB290: CxxxMB290-S0100) CxxxMB290-01xx) C395MB290-S0100 C395MB290-0103 C405MB290-S0100

    HUVL370-510

    Abstract: ULTRAVIOLET LED IR 5MM LED HERO ELECTRONICS LIMITED
    Text: HUVL370-510 Ultraviolet LED • Features Ultraviolet Light Emitting Diode 370nm 5mm Diameter Clear Epoxy Package o Beam Angle θ½ TYP. ±10 ■ Absolute Maximum Ratings Ta = 25oC Parameter Pulsed forward current (t ≤ 10ms) Duty cycle 1/10 Forward current


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    PDF HUVL370-510 370nm HUVL370-510 ULTRAVIOLET LED IR 5MM LED HERO ELECTRONICS LIMITED

    K 2056 transistor

    Abstract: ccd Linear Image Sensor transistor K 2056 s11151 S11151-2048
    Text: CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region 200 nm nearly equal to back-thinned CCD. Features Applications


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    PDF S11151-2048 S11151-2048 24-pin KMPD1119E04 K 2056 transistor ccd Linear Image Sensor transistor K 2056 s11151

    ld20-11

    Abstract: TX0104 LDU-425 LDU45 LD20-02 6x22AWG LD200 Bos LD20 amphenol trimmer LD20-01
    Text: Luminescence Detectors Technical Description The working principle of the LD20 is based on the emission of visible light when luminescent material is struck by ultraviolet light. As the UD light from the LD20 strikes a luminescent object or mark, the ultraviolet


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm SOLID STATE LAMP W7113UVC Features l HIGH Description PERFORMANCE. l SUITABLE ULTRAVIOLET FOR AUTOMOTIVE DASHBOARD LIGHTING,WHITE LEDS AND BACKLIGHTING. The source color devices are made with InGaN on SiC Light Emitting Diode. This device radiates intense ultraviolet (UV) light when


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    PDF W7113UVC DSAD2149 APR/15/2003 W7113UVC

    ultraviolet led

    Abstract: 5mm high brightness ultraviolet led MVB51TK-1S
    Text: MVB51TK-1S HIGH BRIGHTNESS ULTRAVIOLET LED LAMP DESCRIPTION MVB51TK-1S is a high brightness ultraviolet LED lamp with 390-410 nm dominant wavelength encapsulated in a 5mm diameter clear transparent lens . ABSOLUTE MAXIMUM RATINGS 125mW 30mA 5V -20 to +80°C


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    PDF MVB51TK-1S MVB51TK-1S 75MAX. 125mW -20to 20nnA ultraviolet led 5mm high brightness ultraviolet led

    ultraviolet led

    Abstract: 5mm high brightness ultraviolet led
    Text: MVB51TK-1S HIGH BRIGHTNESS ULTRAVIOLET LED LAMP DESCRIPTION MVB51TK-1S is a high brightness ultraviolet LED lamp with 390-410 nm dominant wavelength encapsulated in a 5mm diametër clear transparent lens . ABSOLUTE MAXIMUM RATINGS 125mW 30mA 5V -20 to +80°C


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    PDF MVB51TK-1S 75VAX. 125mW -20to -hl00Â ultraviolet led 5mm high brightness ultraviolet led