UM 5101 Search Results
UM 5101 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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M38510/12907BPA |
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M38510 - And Gate Based Peripheral Driver, 2 Driver, 0.5A, BIPolar, CDIP8 |
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JM38510/17203BCA |
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CMOS Quad Exclusive-OR Gate 14-CDIP -55 to 125 |
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JM38510/17003BCA |
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CMOS Triple 3-Input AND Gate 14-CDIP -55 to 125 |
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JM38510/17002BCA |
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CMOS Dual 4-Input AND Gate 14-CDIP -55 to 125 |
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JM38510/10902BCA |
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Dual Precision Timer 14-CDIP -55 to 125 |
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UM 5101 Price and Stock
Infineon Technologies AG ICL5101XUMA1LED Lighting Driver ICs High Voltage Resonant Contoller |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ICL5101XUMA1 | 2 |
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Vishay Intertechnologies UMA02040G5101BAU00MELF Resistors UMA 0204-05 0.1% AU 5K1 |
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UMA02040G5101BAU00 |
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Vishay Intertechnologies UMA02040G5101BA300MELF Resistors UMA 0204-05 0.1% AL 5K1 |
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UMA02040G5101BA300 |
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Infineon Technologies AG ICL5101LED Lighting Driver ICs High Voltage Resonant Contoller |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ICL5101 |
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United Microelectronics Corporation UM5101 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UM5101 | 66 |
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UM 5101 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings |
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ESAB33 l95t/R89 | |
h0263
Abstract: ESAB85-009 P151 T460 T930
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ESAB85-009 O-220AB SC-46 500ns, 095t/R89 Shl50 h0263 P151 T460 T930 | |
Contextual Info: TP802C0400A -4 K SCHOTTKY BARRIER DIODE Features • te V F Low VF Super high speed sw itch in g . • w a f t «14 Connection Diagram High reliability by planer design ' Applications High speed p ow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings |
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TP802C0400A) 500ns E3TS30S3^ 95t/R89 | |
ENS150-11A
Abstract: 200ih1u JIS-C-0806 ENS060-13 ENS070-13 ENS080-15 ENS120-15 ENS240-13 tb1208c
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ENS080-15 ENS150-11A 200ih1u JIS-C-0806 ENS060-13 ENS070-13 ENS080-15 ENS120-15 ENS240-13 tb1208c | |
68000 MC68681 PROGRAMMING EXAMPLE
Abstract: mcr 5102 PMX 820 M68000 M68300 MC68340 MC68341 motorola 68000 manual UM 9515 motorola 68000
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A23-A0) A31-A24) MC68341 68000 MC68681 PROGRAMMING EXAMPLE mcr 5102 PMX 820 M68000 M68300 MC68340 motorola 68000 manual UM 9515 motorola 68000 | |
Contextual Info: A - * - " MODEL SERIES 5 1 0 0 7 /8 " Diam eter Single Turn W irew ound Precision Potentiometer MODEL STYLES 5101 1/8" Shaft, 3/8" Bushing 5103 1/8" Shaft, Servo ELECTRICAL Resistance Range, Ohms 200 to 15K Standard Resistance Tolerance ±5% M inim um Practical Resistance Tolerance |
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133bblQ 133bblD 0D03334 | |
electrolytic ELITE
Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
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sh163b electrolytic ELITE electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4 | |
diode js7
Abstract: Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7
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E82988 diode js7 Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7 | |
Contextual Info: ERC20M 5A t a n t u m — K FAST RECOVERY DIODE Features Insulated package by fully m o ld in g . High voltage by mesa design. • ¡ftifs fitt Connection Diagram High reliability : Applications High speed switching. M axim um Ratings and Characteristics |
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ERC20M l95t/R89 Shl50 | |
DIODE S4 5AA
Abstract: 5962-8971001XX S7B SMD TR plji S4 5AA S78 SMD ADG526A ADG527A DG526 DG527
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ADG526A/ADG527A 100ns DG526 DG527 ADG526A ADG527A DIODE S4 5AA 5962-8971001XX S7B SMD TR plji S4 5AA S78 SMD DG527 | |
ERG75
Abstract: T151 T760 T810 A23G
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ERG75 ERG75 eBTB30Â EaT05 I95t/R89) T151 T760 T810 A23G | |
Contextual Info: E R 6 2 - 0 0 4 io a C SCHOTTKY BARRIER DIODE * Features • &vF Low VF Super high speed switching. • 7 i Connection Diagram High reliability by planer design, : Applications High speed power switching. : M axim um Ratings and Characteristics : Absolute Maximum Ratings |
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I95t/R89) | |
557 timer connections
Abstract: M68000 MC68340 MC68681
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M68SGG MC68340 557 timer connections M68000 MC68681 | |
mcr 5102
Abstract: M68000 M68300 MC68349 MC68681 pipeline synchronization 8332 memory
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M68300 CPU030 CPU32+ MC68349 mcr 5102 M68000 MC68681 pipeline synchronization 8332 memory | |
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esad92-02
Abstract: AT8N
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ESAD92-02 t95t/R89 Shl50 AT8N | |
Contextual Info: SILICON PIN DIODE MMBV3401LT1* . designed primarily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um |
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MMBV3401LT1* OT-23 O-236AB) MMBV3401LT1 | |
ESAB92-02
Abstract: A-221 T151 T460 T760
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ESAB92-02 O-22QAB SC-46 ETS30S3^ I95t/R89) A-221 T151 T460 T760 | |
ERD36MContextual Info: ERD36M 4A FA S T RECOVERY DIODE • ifrHi : Features Insulated package by fully molding Super high speed switching Low V F in turn on ■ M ttttto tfJM Connection Diagram High reliability ■ Æ iÉ : Applications • sax-f High speed switching. M axim um Ratings and Characteristics |
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ERD36M l95t/R89 | |
ESAD83-004
Abstract: LT460
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ESAD83-004 500ns LT460 | |
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 1 6367254 MOTOROLA SC DE|b3ti7254 XSTRS/R 96D 8 2 4 7 5 _ T ~ F □DÔ247T S | D ^ ? - 2 - 7 MAXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage |
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b3ti7254 7007AB MD7007F MQ7007 D7007AB MD7007 | |
LT9EContextual Info: E R D 75 2 oa "f K : O utline D raw ings FAST RECOVERY DIODE • 4$ ^ : Features • Planer chip • V 7 Y l) 1 i ' il) — Soft recovery type • Stud mounted : Applications • Switching power supplies • Free-wheel diode • Others. M axim um Ratings and Characteristics |
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50HzjE ii3Tg5fi35^ I95t/R89) LT9E | |
b35 DIODE schottky
Abstract: ERG81-004 ERG81A-004 ERG81 T151 T460 T930 ERG8VERG81
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ERG8VERG81 ERG81-004, ERG81A-004 50HzIESÂ I95t/R89) b35 DIODE schottky ERG81-004 ERG81A-004 ERG81 T151 T460 T930 | |
ENS150-11AContextual Info: ENS150-11A ' > \ u > - y - - i ¿ > y ^ ± S S A : Outline Drawings y *v - ' < SILICON SURGE ABSORBERS 8S » m 01 *r-* x,n $• > «» *) D2 sB(s¡s(íA,Ktea) P 7 I* 7.6± 0.3 ■ L 1.6d:0.3 ' 'J l: 1.6±0.3 u □ m ¿±0.1 '• Maxim um Ratings and Characteristics |
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ENS150-11A I95t/R89) ENS150-11A | |
A509
Abstract: PA886C02 SC-65 T151 T930 l4pf
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95t/R A509 PA886C02 SC-65 T151 T930 l4pf |