UM 54 DIODE Search Results

C4351

Abstract: ic 74 hc 10
Contextual Info: New D a ta . C D 54/74H C 4351, C D 54/74H C T4351 C D 54/74H C 4352, C D 54/74H C T4352 C D 54/74H C 4353, C D 54/74H C T4353 HARRIS SECTOR File N um b er 27E D 2145 4303271 ODlflaSb 2 Analog Multiplexers/Demultiplexers With Latch Type Features: • Wide analog in p u t voltage range: ± 5 V max,

74HC126

Contextual Info: Technical Data CD54/74HC126 CD54/74HCT126 File N um b er 1772 High-Speed CMOS Logic Quad Buffer, 3-State ?>- Type Features: • Separate o u tp u t enable inputs ■ 3-state ou tputs FUNCTIONAL DIAGRAM Th e RC A C D 54/74H C 126 an d C D 54/74H C T126 con tain

SG5T

Abstract: EM - 400 RM2C SG-5FR Sg 1b
Contextual Info: Absolute M axim um Ratings Type No. Elee. Char, at 25°C V rm lo I fsm Vf Ir V (A) (A) Max. @ I, (m A) (V) SFPM-52 200 0.9 30 1.0 1.0 45 0.98 (A) Absolute M axim um Ratings Type No. V rm lo If s m (V ) (A) (A) Max 100 RM 4Z 200 RM 4 400 SFPM-54 400 200 SFPM-64

Contextual Info: Technica! Data CD54/74HC126 CD54/74HCT126 File N um b er 1772 High-Speed CMOS Logic Quad Buffer; 3-State Type Features: • Separate o u tp u t enable inpu ts ■ 3-state ou tputs FUNCTIONAL DIAGRAM The RCA C D 54/74H C 126 and C D 54/74H C T126 contain fo u r independent 3-state buffers, each having its ow n o u t­

Contextual Info: Technical Data CD54/74HC688 CD54/74HCT688 File N um ber 1646 High-Speed CMOS Logic 8-Bit Magnitude Comparator Type Features: • Cascadable 9 2 C S -3 8 4 I5 FUNCTIONAL DIAGRAM The R C A -C D 54/74H C 688 and C D 54/74H C T688 are 8-b it m a gnitude c om para tors designed fo r use in c o m p u te r and

74HC125

Abstract: 74HCT125
Contextual Info: Technical Data File N um b er CD54/74HC125 CD54/74HCT125 1771 High-Speed CMOS Logic Quad Buffer; 3-State Type Features: • S eparate o u tp u t enable inputs ■ 3-state o u tp u ts The R C A-C D 54/74H C 125 and C D 54/74H C T125 con tain 4 in d e p e n d e n t 3-state buffers, each having its ow n o u tp u t

Contextual Info: Technical Data File N um ber CD54/74HC93 CD54/74HCT93 1849 High-Speed CMOS Logic 4-Bit Binary Ripple Counter Type Features: • Can be c o n fig u re d to divide by 2, 8, and 16 ■ A sy n c h ro n o u s M aster Reset F U N C T IO N A L D IA G R A M The R C A-C D 54/74H C 93 and the C D 54/74H C T93 are h ig h ­

L40205

Contextual Info: ML 4000 SERIES SILICON SCHOTTKY DETECTOR DIODES These low barrier diodes are suitable for use in waveguide, coaxial and stripline applications. They feature high sensitivity, and low I/F noise. These diodes are listed by increasing frequency, grouped by package style and T„. Other

MA4E931D

Abstract: Detectors - Diode ODS-990 MA4E932C ma4e928
Contextual Info: Zero Bias Detector Diodes Features • CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS AND BEAM LEADS Description Applications This fam ily of Zero Bias D etector ZBD diodes is designed

Contextual Info: Bulletin 12120 rev. A 07/97 International M R Rectifier SAFEIR Series io e t s . INPUT RECTIFIER DIODE VF < 1.1V@ 10A ' fsm = 200A I Description/Features I The 10ETS. rectifier S A F E IR series has been optimized for very low forward voltage drop, VRRM800 to 1600V

Diode BYW 56

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­

6fm8

Abstract: DIODE RK 69 rs tube general electric
Contextual Info: 6FM8 6FM8 ET-T1519 Page 1 2-59 f h 0 nic ^TUBES DUPLEX-DIODE TRIODE F0R DETECTOR A N D AF VOLTAGE-AMPLIFIER APPLICATIONS DESCRIPTION A N D RATING = T h e 6 F M 8 is a du p lex-d io d e, h ig h - m u trio d e w ith separate ca th o d e s fo r each o f the d io d e se ctio n s a n d the trio d e section. T h e tu b e is d e sign e d p r im a r ily fo r

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 792 nm, 60 W cw JDL-BAB-30-19-792-TE-60-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers

Contextual Info: SbE D 3D 3 D b 0 q Ü G G 1 S 1 7 13fl * V C T GaAIAs Infrared Emitting Diodes V T E 1 1 6 3 , 66, 68 TO-46 Lensed Package — 880 nm T-41-I3 E G 8. G VACTE C PACKAGE DIMENSIONS inch mm til CASE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE:.01 S 'x .01 S'

Contextual Info: Technische Information / technical information FD600R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 976 nm, 80 W cw JDL-BAB-20-19-976-TE-80-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 976 nm, 80 W cw JDL-BAB-50-47-976-TE-80-1.5 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 60 W cw JDL-BAB-30-19-808-TE-60-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers

MA47079

Abstract: MA47077 MA-47077 MA-47075 MA47051 MA47084 MA-47081 MA47075 47075
Contextual Info: PACKAGED CONTROL DIODES 27 PACKAGED PIN DIODES FOR LOW, MEDIUM AND HIGH POWER APPLICATIONS PIN control diodes from M/A-COM Silicon Products, Inc. employ hard glass passivation techniques, with careful process control to insure optim um , highly reproducible devices. These devices are designed for

1N4532

Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Contextual Info: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic

BZY91

Abstract: BZY91-C75 BZY91-C75R BZY91C BZY91-C7V5 BZY91-C7V5R R6472 BS9305-F052 43c56 82C11
Contextual Info: MAINTENANCE TYPE SCOISI BZY91 SERIES REGULATOR DIODES Also available to BS9305— F052 A range o f diffused silicon diodes in DO-5 metal envelopes, intended fo r use as voltage regulator and transient suppressor diodes in power stabilization and transient suppression circuits.

philips zener diode c24

Abstract: SOD-18 philips bzx70 zener diode c43 BZX70 philips zener diode c12 BZX70-C7V5 DIODE BZX70 BZX70-C75 c22 zener philips 43c56
Contextual Info: BZX70 SERIES MAINTENANCE TYPE P H IL IP S J ib E _ p INTERNATIONAL • 711D6Sb 0 am b 7 b ^ h37 M P H I N T - O h l3 REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.

ic 7483 BCD adder

Abstract: Multiplexer IC 7483 4 bit bcd adder using ic 7483 IC 74196 82S62 82583 adder transistor equivalent table of IC 7483 used in 4-bit binary adder IC 7483 BINARY ADDER SN29312
Contextual Info: 82S OPTIMIZED SCHOTTKY MSI Series 82S optimized Schottky MSI circuits are implemented with Schottky-barrier-Diode SBD clamping to achieve ultrahigh speed previously only attainable with em itter-coupled logic and in addition low current PNP inputs provide numerous

diode a4p

Abstract: MA4P504-30 MA4P506-258 ODS-30 MA4P303-30 MA4P709-150 ma4p MA4P505-30 4P604 MA4P604-30
Contextual Info: Packaged Silicon PIN Diodes Features • HIGH POWER PIN DIODES ■ FAST SPEED PIN DIODES ■ VOLTAGE RATINGS TO 2000 VOLTS ■ LONG CARRIER LIFETIME DESIGNS ■ WIDE VARIETY OF HERMETIC PACKAGES ■ HIGH RELIABILITY FOR SPACE/MILITARY APPLICATIONS Description