UMT1N APPLICATIONS Search Results

transistor t1a

Abstract: t1A Transistor MARKING marking code t1a t1a transistor transistor t1A 25 SMT T1A transistor T1n
Contextual Info: UMT1N IMT1A Transistor, dual, PNP Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages • package marking: U M T1N and IMT1 A; T1 UMT1N (UMT6) g .0 i0 .2 Fr^Ÿl >±0.1 (2) JBHHf IS 0.65 I • package contains two independent

A.4 SOT363 MARKING

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMT1N Features x x x • • • Two 2SA1037AK chips in a package Mounting possible with SOT-363 automatic mounting machines.

umt1n applications

Abstract: "dual TRANSISTORs" sot363
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMT1N Features x x x Two 2SA1037AK chips in a package Mounting possible with SOT-363 automatic mounting machines.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMT1N Features • x x x • • • Halogen free available upon request by adding suffix "-HF" Two 2SA1037AK chips in a package

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMT1N Features • x x x • • • Halogen free available upon request by adding suffix "-HF" Two 2SA1037AK chips in a package

wifi 5 watt amplifier circuit

Abstract: wifi schematic wifi amplifier circuit RF TRANSISTOR 1.5 GHZ dual gate 120 ap4 resistor 8.2 k wifi 2 watt amplifier circuit
Contextual Info: The Communications Edge TM Application Note Product Information 5.25 GHz AP4 Application Circuit AP4 Application Circuit for IEEE 802.11a W-LAN Preliminary Summary: This application note details the operation and schematic of an application circuit using a WJ Communications’ AP4 device

WJ transistor

Abstract: FP2189 THEORY FP1189 FP31QF two transistors matched transistors
Contextual Info: Application Note The Communications Edge TM Active-Bias Constant-Current Source Recommended for WJ HFET devices An optional active-bias current mirror is recommended for use with the application circuits shown in WJ’s FP1189 and FP2189 datasheets. All WJ HFET’s require a negative gate voltage with a positive drain voltage.

B647

Abstract: DTA144EK DI-74 DTA114EK transistor marking B9
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

Contextual Info: FP31QF The Communications Edge TM Advanced Product Information 23 22 21 GND 20 GND GATE / 3 RF IN 19 DRAIN / RF OUT 16 GND GND 7 15 GND 8 9 10 11 12 13 14 GND 17 GND GND 6 GND 18 GND GND 5 GND GND 4 Function Gate / RF Input Drain / RF Output Pin No. 3 19 All other pins &

jd 1803

Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,

fp21g

Abstract: fp2189-G FP2189G fp21-g fp-21g FP2189 4604 dual fet TriQuint SOT-89 TAPE AND REEL RF 435 sot89 Marking code fp21g
Contextual Info: FP2189 1-Watt HFET Product Features Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years • • • • • • Applications •

power supply 1000 watt

Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description

fp21g

Abstract: fp21-g FP2189-G sot89 Marking code fp21g
Contextual Info: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •

fp21g

Abstract: fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM
Contextual Info: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •

Contextual Info: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

SOT89 MARKING CODE 8G

Abstract: g4bc fp2189-G fp21-g marking code 85Z Fp2189 wj model marking code FP2189 FP21G transistor C1000 Y MARKING C14 85Z
Contextual Info: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features x x x x x x 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Applications

transistor 4287 AB

Abstract: ML200DSS k 3116 transistor fet Rohm part marking Z7 Fp2189
Contextual Info: FP2189 The Communications Edge TM 1-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description Functional Diagram

fp31ff

Abstract: transistor C1000 FP31QF-F RF amplifier IDC-12 c1000 transistor FP-31F-F TQP7M9104
Contextual Info: FP31QF 2-Watt HFET Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain

FP1189

Abstract: 8893 application diagram
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package

FP31QF-F

Abstract: FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 FP31QF schematic diagram 500 watt power amplifier free d schematic diagram 800 watt power amplifier free d transistor C1000 Y
Contextual Info: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications x x x x x x RF Parameter 2 Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain Output P1dB Output IP3 (3) Noise Figure GND GND 25 GND GND GND 26 24 23 22

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

RFID ID-20

Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

RFID ID-20

Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

rds035

Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Contextual Info: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW