UNITED CHEMI-CON CAPACITORS PART MARKING Search Results

United Chemi-Con capacitors part marking

Abstract: 10 mfk MFK Series CHEMICON MFK Series
Contextual Info: Ⅲ Surface Mount Ⅲ Large Capacitance Ⅲ Low Profile Horizontal Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MFK series are the standard low profile, surface mount capacitors from United Chemi- Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be

CHEMICON MFK Series

Abstract: 10 mfk MFK Series
Contextual Info: MFK LG. CAP. SURFACE MOUNT-105؇C MFK Large Capacitance Ⅲ Surface Mount Ⅲ Large Capacitance Ⅲ Low Profile Horizontal Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MFK series are the standard low profile, surface mount capacitors from United Chemi- Con.

MFK Series

Abstract: MFK16 10 mfk United CHEMI-CON
Contextual Info: Ⅲ Surface Mount Ⅲ Low Profile Horizontal Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MFK series are the standard low profile, surface mount capacitors from United Chemi- Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be

Contextual Info: Ⅲ Surface Mount Ⅲ Low Profile Horizontal Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MFK series are the standard low profile, surface mount capacitors from United Chemi- Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be

MFK50FC10RMD10TP

Abstract: 10 mfk MFK Series
Contextual Info: MFK SURFACE MOUNT-105؇C MFK Series Ⅲ Surface Mount Ⅲ Low Profile Horizontal Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MFK series are the standard low profile, surface mount capacitors from United Chemi- Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be

T491D106K010AT

Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

Contextual Info: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF5S9070N

Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

MRF377HR3

Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

845 motherboard circuit

Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

MARKING WB1

Abstract: ATC100B470JT500XT MRF9135L MRF9135LR3 T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9135LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MARKING WB1

Abstract: MRF9135LSR3 ATC100B470JT500XT MRF9135L T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L - 2 Rev. 10, 9/2008 RF Power Field Effect Transistor MRF9135LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

ATC100B160JT500XT

Abstract: ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

MRF9135LSR3

Abstract: MRF9135L MRF9135LR3 DB3-5D
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9135

Abstract: MRF9135L MRF9135LR3 MRF9135LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

020C

Abstract: A114 A115 JESD22 MRF5S9070NR1 515D107M050BB6A crcw12065603f100 MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data MRF5S9070NR1 Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with

DATUM

Abstract: MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with

Nippon capacitors

Abstract: Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Nippon capacitors

Abstract: Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF9135LR3

Abstract: MARKING WB1 MRF9135L MRF9135LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier