UPA102B Search Results

UPA102G

Abstract: UPA102B
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded

TRANSISTOR C 2 SUB

Abstract: UPA102G UPA102B
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded

Transistor Array differential amplifier

Abstract: transistor array high speed G141C UPA102G
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

UPA102G

Abstract: transistor PACKAGE PIN DIAGRAM
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM • TW O BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE LINEARITY • TW O PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceram ic package

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

UPA101

Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
Contextual Info: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,