UPC1658C Search Results

Contextual Info: N E C ELECT RO NI C S INC 7 5 D e J b42752S 0000713 Ì D ¿¿PC1658A 1658C SILICON M O N O L IT H IC BIPOLAR INTEGRATED C IR C U IT LOW NOISE W ID E -B A N D AMPLIFIER A b s o lu te M a x im u m R atings UPC1658A UPC1658C 12 12 V 40 40 mA 750 600 mW Vcc XQ3

Contextual Info: NEC UPC1658A UPC1658C UPC1658G LOW NOISE WIDE-BAND SILICON MMIC AMPLFIER FEATURES DESCRIPTION AND APPLICATIONS • LO W NO ISE FIGURE: < 3 dB The UPC1658 is a low noise, w ide band, S ilicon MMIC A m pli­ fier that operates from 10-1000 MHz in a variety o f configura­

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

PC1658G

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT jUPC1658 LOW-NOISE HIGH-FREQUENCY AMPLIFIER SiMMIC FEATURES INTERNAL EQUIVALENT CIRCUIT • Low noise figure: < 3 dB • High gain is available by external resistor. N arrow band: > 40 dB Wide band : > 18 dB •

mmic a08

Abstract: UPC1658C UPC1658A upc1658 UPC1658G A08 mmic UPG1658
Contextual Info: NEC LOW NOISE WIDE-BAND I □ £ £ ] ! ! ! £ SILICON MMIC AMPLFIER ¿JJ^gggQ FEATURES DESCRIPTION AND APPLICATIONS • LO W NO ISE FIGURE: < 3 dB The UPC1658 is a low noise, w ide band, S ilicon MMIC A m pli­ fier that operates from 10-1000 MHz in a variety o f configura­