UPC2711 Search Results

BYPASS Capacitors NEC

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 13 dB TYP. @ f = 1 GHz Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W IDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) m T> • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

am tuners

Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

UPC2708

Abstract: UPC2708T DB815 UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

low noise, hetero junction fet

Abstract: NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01
Contextual Info: DBS Receiver NEW! NEW! NE429M01 Hetero Junction FET NE76038 MESFET • 6 pin super minimold package • Available on tape and reel • Low cost plastic package • Available on tape and reel UPC2711/12TB IF Amplifiers • Now available in smaller, lower cost SOT-363 packages

pt 7313

Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
Contextual Info: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:

Contextual Info: ,r« 8 1993 NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES_ • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE

DB815

Abstract: UPC2708 UPC2708T UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

MMIC SOT 363 marking 850

Contextual Info: 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY • SUPPLY VOLTAGE: V cc = 4.5 to 5.5 V • W IDEBAND RESPONSE:

Contextual Info: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

marking c1g

Abstract: marking c1h UPC2712TB pt 7313
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W ID E FREQ UENC Y R ESPO NSE: 3 GHz • HIG H G AIN: 15 dB UPC 2708T • SA TUR ATED O U TPU T PO W ER: +10 dBm (UPC2708T) • INTERNAL CU R R EN T REG ULATIO N M INIM IZES GAIN CH ANG E O VER T EM PER A TU R E

C1H mmic

Abstract: UPC2711TB UPC2712TB-E3 mmic e3 UPC2711TB-E3 UPC2712TB c1g nec marking C1H mmic
Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • WIDE FREQUENCY RESPONSE: 3 G H z • HIGH GAIN: 15 dB U P C 2 7 0 8 T . SATURATED OUTPUT POWER: + 1 0 dBm (U P C 2 7 0 8 T ) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC2709T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The /¿PC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is packaged in minimold package.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 2 7 0 8 T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2708T is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C is packaged in minimold package.

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

U12790E

Abstract: PC2711 ID78K0-NS IE-178098-NS-EM1 IE-78K0-NS
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社