UPG107P Search Results

UPG107B

Abstract: mmic s3 UPG1078 BF08 UPG107P
Contextual Info: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT uPG107P S-BAND SPDT SWITCH CHIP DESCRIPTION T h e ¿¡PG107P is a G a A s m o n o lith ic in te g ra te d c irc u it d e s ig n e d as a S -B a n d S P D T (S in g le P ole D o ub le T hrow ) sw itch and the d e v ic e is a v a ila b le in chip form .

uPG107B

Contextual Info: S-BAND SPDT MMIC SWITCH FEATURES ^ 107B UPG107P IN - OUT 1 INSERTION LOSS VS. FREQUENCY ~- • WIDE OPERATING FREQUENCY BAND: DC to 3.4 GHz • SWITCHING SPEED 5 ns TYPICAL

UPG107B

Abstract: BF08 UPG107P
Contextual Info: 1 E C/ CALIFORNIA NEC 5bE D DDDS73S TOT « N E C C “ 5 M I UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION T Units in mm O UTLINE BF08 U P G 1 0 7 B is an S -B a n d S P D T (Single P o le D ou ble Throw) G a A s F E T sw itch w h ich w a s d evelo p e d for radar application.

Contextual Info: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

IC 2453

Abstract: IC-2453
Contextual Info: DATA SHEET NEC GaAs INTEGRATED CIRCUIT _ ¿¿PG107P S-BAND SPDT SWITCH CHIP DESCRIPTION The /¿PG107P is a GaAs m onolithic integrated circuit designed as a S-Band SPDT (Single Pole Double Throw) switch and the device is available in chip form. The /¿PG107P can be used from DC to 3.4 GHz and is suitable for S-band satellite com m unication system or a

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V