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    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    UPB585B

    Abstract: UPB585G BF08 UPB585 UPB585P VLN 2003 pm 532 "power supply"
    Contextual Info: NEC/ 5bE T> CALIFORNIA NEC b427414 QGGEbOG ÔCH H N E C C ' UPB585B UPB585G UPB585P 2.5 GHz DIVIDE-BY-4 PRESCALER OUTLINE DIMENSIONS FEATURES 'T * 4 S - \0 i- i3 Units in mm OUTLINE BF08 • H IG H FREQ UENC Y OPERATION: 2.5 GHz • W ID E BAND APPLICATION: 0.5 to 2.5 GHz


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    b427414 UPB585B UPB585G UPB585P UPB585 UPB585B) UPB585G) UPB585P) 4274m UPB585B, BF08 UPB585P VLN 2003 pm 532 "power supply" PDF

    UPB585G

    Contextual Info: NEC UPB585B UPB585G UPB585P 2.5 GHz DIVIDE-BY-4 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE BF08 • HIGH FREQUENCY OPERATION: 2.5 GHz • WIDE BAND APPLICATION: 0.5 to 2.5 GHz • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% DESCRIPTION AND APPLICATIONS


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    UPB585B UPB585G UPB585P UPB585 UPB585B) UPB585G) UPB585P) UPB585B, UPB585G, UPB585G PDF