US 945 MOSFET Search Results

MRF9030

Abstract: MRF9030LSR1 MRF9030R1
Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

us 945 mosfet

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

MRF181

Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
Contextual Info: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

93F2975

Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

motorola MOSFET 935

Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S
Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030L

Abstract: motorola MOSFET 935 MRF9030 MRF9030LR1 MRF9030LSR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9060L

Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

RF-35-0300

Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9060

Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent
Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030

Abstract: MRF9030R1 MRF9030SR1
Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

93F2975

Abstract: transistor WB1
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

mrf9045l

Contextual Info: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

A113

Abstract: MRF9045MBR1 MRF9045MR1
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.

MRF9045

Abstract: MRF9045S MRF9045SR1
Contextual Info: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9045R1

Abstract: MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit
Contextual Info: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184S MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF9045MBR1

Abstract: MRF9045MR1 6020G
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

RF3-50

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

motorola MOSFET 935

Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices