USSR DIODE Search Results

Contextual Info: International USSR Rectifier po-mois IRFBC40S/L PRELIMINARY HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching

ga200ts60u

Contextual Info: International USSR Rectifier p re lim in a ry "HALF-BRIDGE" IGBT INT-A-PAK PD'5058 G A 200TS60U Ultra-Fast Speed IGBT Features V qes = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

TRIODE 6H13C

Abstract: Triode 6h7c 6H13C TUBE 6j1 V148T TRIODE 6C4C "Receiving Tubes" book 6H7C 6H16B 6H9c triode
Contextual Info: nPHEMHO-yCHJIHTEJIbHblE ilAMflbl RECEIVING TUBES v\n/y B /O „ M A U in P M B O P H H T O P r“ CCCP M OCKBA nPHEMHO-yCMJlMTEnbHblE riAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALUnPMBOPMHTOPr“ CCCP MOCKBA V/O “ MASHPRIBORINTORG” USSR M O SCO W

6h2n

Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P
Contextual Info: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH

finder timer type 15.21

Abstract: D78243 RTL 8198 POWER COMMAND HM 1211 power controler RTL 8189 finder type 81.11 ussr a51 sf hen nec uPD78220 200QH
Contextual Info: u s e r ’s m a n u a l /¿PD78244 S U B -S E R IE S 8-B IT SINGLE-CHIP MICROCOMPUTER HARDWARE 078243 / P D 7 Q a 4 4 D ocu „, No. |EU_ , 3 6 e •D. No. /EU—747p) P m t e d UbllRhed m JapanA p ril 1 994 P USSR’S MANUAL uPD78244 S U B -S E R IE S

6j1 tube

Abstract: 6N16B 6N1P TUBE 6j1 TRIODE 6C4C 6H13C 6c8c tube 6H7C 6n1p-ew 6N24P
Contextual Info: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH

gallium phosphide band structure

Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Contextual Info: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays

IRG4BC30KD-S

Contextual Info: International IG R Rectifier euminaw 4 IR G B C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 30 PD9,594A K D -S Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tjc = 1 0 ms , @360V Vce start , T j = 125°C,

IRFIP250

Abstract: TO-247 FULLPAK Package 9746 AN972
Contextual Info: International ioR Rectifier PD-9.746 IRFIP250 HEXFET Power MOSFET • • • • • • • Isolated Package DC Package solation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm Dynamic dv/dt Rating

DP6035L

Abstract: FDP6035L FDB6035L
Contextual Info: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm F DP6035L/FD B6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

c235 diode

Contextual Info: PD - 9.1261D International IQ R Rectifier IRF7601 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching Vdss =

Contextual Info: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

IRG4PC30UD

Contextual Info: International I R Rectifier P D 9.1462A IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TR A N SIST O R WITH ULTRAFAST SO FT R E C O V E R Y DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

FDB6035AL

Abstract: FDP6035AL
Contextual Info: July 1998 FAIRCHILD MICDNDUCTDR- FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET Features General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

IRFZ34

Abstract: IRFZ34 mosfet HI POWER 30A MOSFET
Contextual Info: PD-9.509B International IrêËI Rectifier IRFZ34 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V pss _ 60V ^D S on - 0 - 0 5 0 n 30A Description

T1N2

Abstract: diode j10v J10V FDB6670AL FDP6670AL
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r J u ly 1 9 9 8 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC

FDN338P

Abstract: SOIC-16 FDN338P T R
Contextual Info: March 1998 FAIRCHILD ì m ic o n d u c t o r FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

B7030

Abstract: FDP7030BL B7030BL DB7030BL FDB7030BL B703 zener diode reverse breakdown voltage 4.5V
Contextual Info: FAIRCHILD s e m ic o n d u c t o r J u ly 1 9 9 8 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC

385H

Abstract: IRFD120
Contextual Info: PD-9.385H International [rag Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Description

NDS351N

Contextual Info: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This

FDC633N

Abstract: SOIC-16
Contextual Info: FAIRCHILD ìm ic d n d u c t o M arch 1998 - r FDC633N N-Channel Enhancement Mode Field Effect Transistor Features General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

fdb fairchild

Abstract: FDB6030L FDP6030L
Contextual Info: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

CD 1517

Abstract: IRFIBE20G
Contextual Info: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =