UT141 Search Results

Contextual Info: www.teleqqertner.com Anschlußmaße nach IEC 1 6 9 -1 5 / K. Gärtner GmbH D—71144 Steinenbronn LerchenstraBe 35 Germany Phone: +49 7157 125-0 Fax: +49 7157 125-120 mating face accoring to IEC 1 6 9 -1 5 Innenleiter / inner conductor CuZn39Pb3 Cu1 Ni2Au1.27

IEC 60169 4

Abstract: IEC 60169 5 j01121a0044
Contextual Info: www.teleqqertner.com Anschlussmaße nach IEC 60169-4 / mating face according to IEC 60169— 4 LerchenstraBe 35 Germany Phone: +49 7157 125-0 Fax: +49 7157 125-120 38.3 m it Transportschutzkappe aus Kunststoff / with plastic protective cover for transport ?

Capacitor 1000uF

Abstract: ut-141 M102 SD1565
Contextual Info: SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 500 WATTS @ 250µSec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

UT-141C-25-TP

Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

Contextual Info: Coaxial Line Stretchers DC to 10.0 GHz Coaxial Line Stretchers HLS Series These coaxial line stretchers maintain an impedance of 50Ω while changing the length of the coaxial tube and adjusting the phase. One type is locked after the adjustment and another type can be used in

Contextual Info: Coaxial Line Stretchers DC to 10.0 GHz Coaxial Line Stretchers HLS Series These coaxial line stretchers maintain an impedance of 50ø while changing the length of the coaxial tube and adjusting the phase. One type is locked after the adjustment and another type can be used in

Contextual Info: H R M s e r ie s IN FO R M A T IO N RFco•AXIAL CONNECTORS The H R M Hirose R ad io Miniature series are connectors o f the S M A (Sub-M iniature T y p e A ) type, prescribed in M IL -C -3 9 0 1 2 . We developed them in 1967, fo r the first tim e in Japan, thanks to our co m pan y's outstanding technology. Since then, their

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

PDM-LR-PC-CF

Abstract: UT141A UT-141A PDM-LP-141-SO-CF 85UT
Contextual Info: プッシュオンタイプ セミリジット＆セミフレキ ケーブル用同軸コネクタ PDM Series 特性インピーダンス 50 Ω 概 要 PHS携帯電話基地局用セミリジットケーブル、 セミフレキケーブル等に対応したコネクタです。

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

TB223

Abstract: amidon BN-61-202
Contextual Info: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A

Z25 transistor

Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from

Contextual Info: S M A -K a b e le in b a u b u ch se SMA Bulkhead Jack 16.5 max. 3 r n SW 8 / Bestell-Nr. Kabelgruppe; Kabel Order Nr. Cable group; cable J01151A006* J01151A0911 8 SW 11/ M o n ta g e Einbaum aB Assembly Mount, dim. C18 C18 G11 UT-85 G10 (UT-141) Z27 Z27

c2316

Contextual Info: MCX-Steckverbindungen nach CECC 22220 M CX Connectors according to CECC 22220 Serie MCX Series MCX Die Serie M C X um faBt kleine H F-Steckverbindungen mit Schnappverbindung. Diese Steckverbindungen konnen bis zu einer Frequenz von 2 G H z eingesetzt w erden. Die Serie M C X w ird in der A u sfu h ru n g m it 50 O hm W ellenw iderstand

C2706

Abstract: IEC-169-15 standard
Contextual Info: SMA-Steckverbindungen nach IEC Publ. 169-15 SM A Connectors according to IEC Publ. 169-15 Serie SMA Series S M A The SM A series is a very popular screw coupling coax connector and can be used up to frequencies of over 18 GHz depending on type . The impedance is controlled at 50 ohms. Connector styles are available for flexible, conformable and semi-rigid cable

UT-141A-TP

Abstract: ut141atp
Contextual Info: TECHNICAL DATA SHEET RPC-2.92 02S141-272E4 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Mechanically compatible with RPC-3.50 and SMA Documents Assembly instruction 02 A7 Material and plating RF_35/12.04/3.0 Connector parts

RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
Contextual Info: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

UT141

Contextual Info: Telefon 07157/125-0 Telefax 07157/125-120 Anschlußmaße nach IEC 169-17 / mating face according to IEC 169-17 Lerchenstrasse 35 Kabelzuschnitt 6 ±0.2 3 Montagebohrung / panel piercing 2.5±0.1 CO oE o Außenleiter / outer conductor CuZn39Pb3 CuSnZn3 Innenleiter / inner conductor

Adams-Russell

Abstract: 070256-0000 ecs 310801 tensolite* connec raychem termination kit PRICE k182 90004000 ECS-310801 K 644 ECS-311201
Contextual Info: BKAD/E/F ARINC 600 • • Low insertion force contacts. Both environmental and non-environmental versions. Rack and Panel • Polarizing posts that are removable from the mating face . • Field replaceable in serts for size 22 and power contacts. • •

MSA-0520

Abstract: MSA-1023 UT85 COAXIAL CABLE UT85 coax MSA0520 S007 UT141 UT85 2 watt carbon resistor avago mmic frequency divider
Contextual Info: Using the MSA-0520 and MSA-1023 Medium-Power MODAMP Silicon MMIC Amplifiers Application Note S007 Introduction This application note describes the use of mediumpower MODAMP silicon MMIC amplifiers at frequencies up to 3 GHz. Single-ended, in-phase parallel and pushpull designs are discussed using models MSA-0520 and

8D-13

Abstract: GHz-26 J01150A0151
Contextual Info: www.telegaertner.com Phone: +49 7157/125-0 10,9 6,35 a 9 Fax: +49 7157/125-120 d b hex 8 d 13,1 D-71144 Steinenbronn Lerchenstrasse 35 Germany 16,8 K.Gärtner GmbH Alle Rechte vorbehalten / all rights reserved Telegärtner Mechanical characteristics Mechanische Eigenschaften