UTI TU Search Results

chn 734

Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

ecl84

Abstract: tube Ecl84 ecl 84 TRIODE PENTODE el 84 4VLA tube el 84
Contextual Info: PHILIPS [ËCL84 TRIODE-PENTODE with separate cathodes. Triode for use in circuits for keyed A.G.C., sync-separation, sync-amplification and noise suppression. Pentode for use as video output tute TRIODE PENTHODE avec cathodes séparées.La triode pour uti­

TMS320C25

Abstract: TMS320C30 TMS320C50
Contextual Info: L&H.smc350 by Lernout & Hauspie Speech Products Software Overview , L&H.smc350 Coder provides the ability to compress encode and decompress (decode) speech for more efficient storage and faster transmission. The product uti- lizes proprietary codebook excited linear

mci741

Abstract: AN-587 motorola motorola op amp an587 AN-587 op amp current power semiconductor 1973
Contextual Info: ANALYSIS AND DESIGN OF THE OP AMP CURRENT SOURCE Prepared by Tim Henry Applications Engineering Motorola Inc. A voltage controlled current source uti­ lizing an operational amplifier is discussed. Expressions for the transfer function and output impedances are developed using

PCC84

Abstract: schema television Philips schema MQ K1 V101U 1n 4871 SCHEMA cascode
Contextual Info: PHILIPS IPCC 84 L . _ DOUBLE TRIODE particularly designed for use as R.F. cascode amplifier in tuners for television receivers up to 220 Mc/s DOUBLE TRIODE conçue particulièrement pour être uti­ lisée comme amplificatrice H.F. en montage cascode

PCL84

Abstract: PCL-841 tube pcl84 pentode philips ll 220VHA
Contextual Info: PHILIPS PCL 84 TRIODE-PENTODE with separate cathodes. Triode for use In circuits for keyed A.G.C., sync-separation, sync-ampliflcation and noise suppression. Pentode for use as video output tube TRIODE PENTHODE avec cathodes séparées. La triode pour uti­

ltw connector 12 pin

Abstract: right angle Female m12 PCB connector ltw 8 pin nmea LTW12-PMMS-SH8 ltw 8 pin circular connector ltw 12 pin circular connector BMMA-SL8001 circular connector right angle mini USB TYPE B MALE PCB SL8001
Contextual Info: Innovation in Waterproof Sol uti on URL:www.ltw-tech .con1 Ttae!W!g System for tu_4ustry Circular Circular Sensor USB DVI Sensor USB D-SUB Power RJ Circular RJ Sensor USB DVI • D-SUB DC Jack RF D-SUB Handheld ~~ Radio Circular Sensor • Power • Sensor

4066 IC circuit diagram

Contextual Info: Revised April 1999 SEMICONDUCTOR TM 74VHC4066 Quad Analog Switch General Description These devices are digitally controlled analog switches uti­ lizing advanced silicon-gate CMOS technology. These switches have low “on” resistance and low “off” leakages.

TE5391

Abstract: TE5399
Contextual Info: ÏRANSYS TE 5391 THRU TE5399 ELECTRONICS GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER LIMITED VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES Plastic package has Underwriters Laboratory DO-15 Flammabi ty Classification 94V-0 uti zing oj.i #28 {•!

9051 7c2

Abstract: E20A J14A M14A
Contextual Info: mW i o •991 April 1991 54ACTQ/74ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description Features The 'ACTQ10 contains three, 3-input NAND gates and uti­ lizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance.

s8210

Abstract: SB2100 SB220 SB230 SB240 SB250 SB280
Contextual Info: TRANSYS SB220 THRU SB2100 ELECTRONICS 2 AMPERE SCHOTTKY BARRIER RECTIFIERS LIMITED VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Am peres DO-15 FEATURES Plastic package has Underwriters Laboratory I -I l.U MIN CM Flammabi ty Classification 94V-0 uti zing Flame Retardant Epoxy Molding Compound

E20A

Contextual Info: & Semiconductor March 1993 54ACTQ/74ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description Features The ’ACTQ10 contains three, 3-input NAND gates and uti­ lizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance.

Contextual Info: Semiconductor March 1993 54ACTQ/74ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description Features The ’ACTQ10 contains three, 3-input NAND gates and uti­ lizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance.

Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC4020 • MM74HC4040 14-Stage Binary Counter • 12-Stage Binary Counter General Description The M M 74H C 4020, M M 74H C 4040, are high speed binary ripple carry co unters. These counters are im plem ented uti­

633200

Contextual Info: October 1998 Semiconductor CLC018 8 x 8 Digital Crosspoint Switch, 1.4 Gbps National’s Comlinear CLC018 is a fully differential 8x8 digital crosspoint switch capable of operating at data rates exceed­ ing 1.4 Gbps per channel. Its non-blocking architecture uti­

Contextual Info: UCC3957 -1/-2/-3/-4 UIMITRODE PRELIMINARY Three - Four Cell Lithium-Ion Protector Circuit FEATURES DESCRIPTION • Three or Four Cell Operation The UCC3957 is a BiCMOS three or four cell lithium-ion battery pack protector designed to operate with external P-channel MOSFETs. Uti­

Contextual Info: UCC3957 -1/-2/-3/-4 y UNITRODE PRELIMINARY Three - Four Cell Lithium-Ion Protector Circuit FEATURES DESCRIPTION • Three or Four Cell Operation The UCC3957 is a BiCMOS three or four cell lithium-ion battery pack protector designed to operate with external P-channel MOSFETs. Uti­

TC51V4265

Abstract: d2539
Contextual Info: TOSHIBA TC51V4265DFIS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

Contextual Info: Semiconductor 54ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description G uaranteed sim ultaneous sw itching noise level and dynam ic threshold perform ance The ’A C TQ 10 contains three, 3 -input NAND gates and uti­ lizes NSC Q uiet Series technology to guarantee quiet output

GM7IC4100

Contextual Info: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­

Power PQFP 64

Contextual Info: CLC018 8 x 8 Digital Crosspoint Switch, 1.4 Gbps National’s Comlinear CLC018 is a fully differential 8x8 digital crosspoint switch capable of operating at data rates exceed­ ing 1.4 Gbps per channel. Its non-blocking architecture uti­ lizes eight independent 8:1 multiplexers to allow each output

Contextual Info: TOSHIBA ‘iO'iTHMÖ 00 2 Ô2 5 2 Û7D TC51V4260DFTS-60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RARA Description TheTC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4260DFTS uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

gm71g4100

Contextual Info: GM71C4100A/AL ES3GOLDSTAR GoldStar ELECTRON CO., LTD. 4,194,304 WORDS x 1 BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­

TC51V17400

Contextual Info: TOSHIBA TC51V17400BSIW70 P R E LIM IN A R Y 4,194,304 WORD X 4 BIT DYNAMIC RAM D escription The TC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­