UV B LAMP Search Results

opa 275

Abstract: opa 220 JEC0.1
Contextual Info: SiC - Photodiode JEC 0,3* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,22 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps

opa 275

Abstract: JEC 200 JEC1C JEC 400 JEC1B 1bc2
Contextual Info: SiC - Photodiode JEC 1* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 1 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps

opa 275

Abstract: photodiode flame JEC 400 340nm
Contextual Info: SiC - Photodiode JEC 0,1* characteristics : i i i i SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,055 mm2 TO 5-package applications : i i i i UV-measurement only control of sterilization lamps flame detection

Contextual Info: GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring UV-A Lamp Monitoring

Contextual Info: GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring UV-A Lamp Monitoring

Contextual Info: Hauptübersicht | Index Main Overview | Index Nichia LED – UV Ultra Violet UV (Ultra Violet) The highest output UV-LED with long life-time and high efficiency Features Surface-mounted LEDs or Lamp Type LEDs: High Power, Ø 5 Type and Can-type A C B A C

27c32

Abstract: NMC27CP1280 NMC27C256 27c16 eprom 27C16 27C256 27C512 27C64 NMC27CP128Q200
Contextual Info: NMC27CP128 NATL SEMICOND {MEMORY} IDE D | b S Q H E b - _- OOt.l4fl4 □ | f_46-13-29 National Semiconductor NMC27CP128 131,072-Bit 16k x 8 UV Erasable CMOS PROM ) . General Description Features The NMC27CP128 is a high-speed 128k UV erasable and

uv detector

Abstract: uv sensors uv PHOTO detector 340nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode

Contextual Info: AGILENT HLMP-EJ37-R0PDD T-1 ¾ 5mm Precision Optical Performance AlInGaP LED Lamp Data Sheet The high maximum LED junction temperature limit of +130°C enables high temperature operation in bright sunlight conditions. The package epoxy contains both uv-a and uv-b

GUVB-S11SD

Contextual Info: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring

Contextual Info: GUVA-S22ED TECHNICAL DATA UV-B Sensor Features • • • • • Applications • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring Absolute Maximum Ratings

Contextual Info: NMC27C32B N A TL SEM ICO ND -CnEHORY> ID E D I b s o i i a t o o b m 3 b J2Ü National æ æ Semiconductor □ I PRELIMINARY NMC27C32B 32,768-Bit 4k x 8 High Speed Version UV Erasable CMOS PROM General Description Features The NMC27C32B is a high-speed 32k UV erasable and

nmc27c256

Abstract: NMC27C256Q NMC27C256Q250 NMC27C256QE NMC27C256Q25 national semiconductor 27c32 NMC27C256Q200 NMC27C256Q20 J28A NMC27C256Q 200
Contextual Info: NAT L S E MI C O N D MEMORY 31E b 5 G l 1 2 h Gü b 3 3 7 3 D T NMC27C256 National Semiconductor NMC27C256 262,144-Bit (32k x 8) UV Erasable CMOS PROM General Description Features The NMC27C256 is a high-speed 256k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

Contextual Info: FUJITSU CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY MBM 27C512-20 MBM 27C512-25 MBM 27C512-30 Septem ber 1986 E d itio n 2.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 b it static CMOS erasable

MBM27C512-15

Abstract: Fujitsu 27c512-15 27C512B
Contextual Info: F U JIT SU CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY M B M 2 7 C 5 1 2 - 1 5 M B M 2 7 C 5 1 2 - 1 7 October 1987 E d itio n 1.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fu jitsu MBM 27C 512 is a high speed 524,288 bit static CM OS erasable

MBM27C512-25

Abstract: 27C512-20
Contextual Info: CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY MBM 27C512-20-W MBM27C512-25-W August 1988 Edition 1.0 CMOS524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 b it static CMOS erasable and e lectrically reprogrammable read only memory EPROM}. It is especially

27C64 ROM

Contextual Info: NMC27C128C NATL SEfllCOND {MEMORY} ID E D | bS0112t. OOblSIS 1 | PRELIMINARY J 3 1 National Jl m Sem iconductor - r - e f b - n - 'd t f NMC27C128C 131,072-Bit 16k x 8 UV Erasable CMOS PROM (Very High Speed Version) General Description Features The NMC27C128C is a high-speed 128k, UV erasable and

NMC27C256

Contextual Info: NATL SENICOND -CHEMORY} IDE D | bSOllEb O D b l S M 1! S | ZWA National 3 ' Semiconductor p r e l im in a r y x NMC27C256C 262,144-Bit 32k x 8 UV Erasable CMOS PROM (Very High Speed Version) General Description Features The NMC27C256C is a high-speed 256k, UV erasable and

27c64-25

Contextual Info: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is

MBM27C1000-20

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 374=!7b2 OOCHEIO b 23E D CMOai.048,576.BI UV ERASABLE REAI ONLY MEMOR MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C1000 EPROM Is a high speed read-only static mem ory th a t Is

27256 block diagram

Abstract: EPROM 27256 27256-25 27256 eprom fujitsu uv erasable eprom Vpp of 27256 eprom
Contextual Info: 020101000000020101000000010102029091 FU JITSU UV ERASABLE 262144-BIT READ ONLY MEMORY MOS 262144 B IT UV ERASABLE A N D ELEC TR IC A LLY PROGRAMMABLE READ O N L Y M EM O RY The Fujitsu MBM 27256 is a high speed 262,144-bit static NMOS erasable and electrically reprogrammable read only memory EPROM . It is especially well

Contextual Info: FORM 0 3 2 4 0 5 - 1 B LTR REVISION DATE APPD c 021 6 1 1-GP01: ADD P/N: DEC-G15E1 2 - H I W - 120A 02-16-11 GR COM PLIANT 20 02/95/E C REVISION NOTES: NOTIFICATION I I PMA 1. LENS MATERIAL: UV STABILIZED POLYCARBONATE □ UL 2. SLEEVE MATERIAL: UV STABILIZED POLYCARBONATE

Fujitsu 27C64

Abstract: 27c64-30
Contextual Info: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is

MBM27C4001

Contextual Info: APR i 5993 March 1993 Edition 1.0 FUJITSU DATA S H EET M B M 2 7 C 4 0 0 1- 12-X/-15-X CMOS 4M-BIT U V EPROM \ CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY The Fujitsu MBM27C4001 EPROM is a high speed read-only memory that is UV-erasable and electrically programmable. The device contains 4,194,304 programmable or reprogrammable