UV PHOTO DETECTOR Search Results

uv detector

Abstract: uv PHOTO detector 250nm photovoltaic photoconductive biomedical photoconductive diode UV diode datasheet uv meter NEP 250 photo diode uv
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1045 PC/PV - UV MXP1046 PC/PV - UV MXP1047 PC/PV - UV UV Enhanced Photo Detectors Features • • • • Photovoltaic / Photoconductive Ultra High Shunt Resistance Ultra Low Noise

Contextual Info: • ■ ■ i Santa AnaL Ana, C CA A_ Micmsemi m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Progresa P ow ered b y Technology MXP1045 PC/PV - UV MXP1046 PC/PV - UV MXP1047 PC/PV - UV UV Enhanced Photo Detectors Features •

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom

410nm

Contextual Info: Tops 1 Power Violet LED OSV5XAT1C1E •Features Dimension Highest Luminous Flux Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications Money Detector ● UV-Curing ● Sensor light ● Photo-catalyst ● Other Lighting

led xeon

Abstract: UV led 405 nm peak wavelength
Contextual Info: Xeon 1 Power Violet LED OSV5XME1C1E •Features ■Outline Highest Luminous Flux ● Super Energy Efficiency ● Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications ● Photo-catalyst ● Other Lighting 3.5 Sensor light

Hamamatsu S6337

Abstract: S1337-1010BQ S6337-01 SE-171 uv light PHOTO detector uv PHOTO detector
Contextual Info: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.

Contextual Info: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.

L11938

Abstract: s11850
Contextual Info: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS

spot light size photodiode

Abstract: S8382
Contextual Info: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Contextual Info: SMD - DETECTOR GaP - PHOTODIODE FP 10UV12 MADE IN GERMANY 6/99 ALL MEASUREMENTS IN mm Tol.: ±0,10 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActivArea Possible pad 1,5x1 Application

Contextual Info: SMD - DETECTOR GaP - PHOTODIODE FP 20UV48 MADE IN GERMANY 6/99 Features ALL MEASUREMENTS IN mm Tol.: ±0,10 Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActive Area Possible pad 1,5x1 Application

Contextual Info: SMD - DETECTOR GaP - PHOTODIODE FP 20UV110 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 6/99 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, Big Active Area Possible pad 1,5x1 Application

TWO COLOR DETECTOR

Abstract: two color photodiode Photodiode, TO-5 K1713 K1713-05 K1713-08 K1713-09
Contextual Info: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range

InGaAs photodiode

Abstract: photodiode InGaAs K1713 K1713-05 K1713-08 K1713-09
Contextual Info: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range

Contextual Info: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range

uv detector

Abstract: uv sensors uv PHOTO detector 340nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode

K3413-05

Abstract: K3413-08 K3413-09 pin photodiode InGaAs sensitivity InGaas PIN photodiode
Contextual Info: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler

Si photodiode, united detector

Contextual Info: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler

Contextual Info: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

S10111

Contextual Info: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speciÝcally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area

sensor BPW34 application note

Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,

Photodiodes

Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
Contextual Info: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera

S10114-1024Q

Contextual Info: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area