UVC PHOTODIODE Search Results

SG01L-C

Abstract: silicon carbide TO-39, UVC
Contextual Info: UVC-selective SiC based UV sensor SG01L-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294

TO-39, UVC

Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
Contextual Info: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294

uv sensor

Abstract: silicon carbide
Contextual Info: UVC-selective SiC based UV sensor SG01S-C Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294

SG01S-C18

Abstract: uv sensor silicon carbide SG01
Contextual Info: UVC-selective SiC based UV sensor SG01S-C18 Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294

SG01S-HT

Abstract: uv sensor silicon carbide SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •

SG01S-5

Abstract: silicon carbide SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness

uv photodiode

Abstract: uv sensor ultraviolet sensor datasheet AG28S uvb sensor uv sensor AG28S ultraviolet sensors AG38S-TO AG32S AG38S-SMD
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN

SIC01S-HT

Abstract: silicon carbide UV photodiode
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •

SG01M-C

Abstract: silicon carbide
Contextual Info: UVC-selective SiC based UV sensor SG01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294

uvc photodiode

Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
Contextual Info: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294

ultraviolet sensor

Abstract: AG28S uv sensor AG28S uvc photodiode
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN

ultraviolet sensor

Abstract: TR15 uv sensor SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor SG 01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material

SG01S

Abstract: uv sensor silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material

Contextual Info: UV-Photodiodes EPD-280-0-0.3-L* Wavelength range Type Technology Case UVA - UVC UV glass with lens SiC TO-5 Description High spectral sensitivity by lens in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC 1,2 Responsivity 1 Applications Environmental technology, analytical techniques,

ultraviolet sensor

Abstract: silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S-ISO Features • Two insulated pins • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material

Contextual Info: EPD-280-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA - UVC UV glass SiC TO-5 / TO-18 Description High spectral sensitivity in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC, excellence stability on high irradiance Environmental

ceramo paste

Abstract: uv sensor ultraviolet sensor CO Sensor
Contextual Info: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness

Contextual Info: EPD-270-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVC UV glass with filter SiC TO-5 / TO-18 Description High spectral sensitivity in the UVC range 230 nm - 285nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,

GUVB-S10GD

Abstract: AG32S
Contextual Info: Ultraviolet selective AlGaN based UV sensor GUVB-S10GD AG32S-SMD Features • UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible • Semiconductor material AlGaN • SMD package with quartz window

uv sensor

Abstract: ultraviolet sensor SUN SENSOR AG38S-SMD
Contextual Info: Ultraviolet selective GaN based UV sensor AG38S-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN

uv sensor

Abstract: ultraviolet sensor SUN SENSOR uv photodiode
Contextual Info: Ultraviolet selective GaN based UV sensor GaN-UVA-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN

silicon carbide

Contextual Info: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material

uv photodiode SIC01L-18

Abstract: SIC01L-18 cree ultraviolet uv sensor
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material

uv photodiode

Abstract: AG38S-TO ultraviolet sensor
Contextual Info: Ultraviolet selective GaN based UV sensor AG38S-TO Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for UV consumer-applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN • TO-18 metal package with 0,076 mm2 active chip area