V 292 Search Results

Contextual Info: BR213-260 Thyristors Dual Bidirectional Breakover Diode V BO Min. (V) V(BO) Max. (V)292 I(S) Max. (A)1.0 I(TRM) Max. (A)40 @ t(w) (s) (Test Condition)320u I(TSM) Max. (A)30 @ t(w) (s)10m V(R) Max. (V)228 I(H) Max. (A) Holding Current150m V(TM) Max. (V)2.5

Contextual Info: SEMIKRON SKiiP 292 GD 170 - 372 WT Absolute Maximum Ratings Symbol |Conditions1 V a lu e s Units 1700 1200 250 500 - 5 5 . . . + 150 4000 230 500 2160 23,4 V V A A °C V A A A kA2S 18 30 75 - 2 5 . . . + 85 V V kV/|xs °C IGBT & Inverse Diode V ces V c c 101

4a2d

Abstract: M608 4b2a H-17 TM90RZ-24 TM90RZ-2H TM90RZ-M XF MR 50hz M-219
Contextual Info: — 292 — V 4 y X ? •ï i î i - TM 90RZ-M , o » « A -H • «M H 2000V; r °? H 5 1 M ÎÎ1 Î iid l « l ■?' V*SM T M 90RZ-M T.M 90RZ H 460 960 ^ a t * ;H'I & V ¡K RM T, =125°C, £ ft À i' ' V’p — V r rm # mA m.A V rhm 400 800 V IliHM T j =125°C.

AH0126

Abstract: DG126 DG126A DG126B F25V10
Contextual Info: - 292 D G 126, 129, 140 dpst j f e t O F F T - f V U — y a > - R l, 7 ì - d ^ • 7,-f fa7JU (o o ^) • ÌR t ì< )4 # t Ì (D G 126) Siliconi) ( V + = 1 2 V , V - = — 1 8 V , V r = 0V , T a = 2 5 °C ) i l fri-' ■m. Equivalere " O F F " Circuit

2N3397

Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

2N2712 advanced

Abstract: 2N2926 equivalent 2N3405 2N2924 equivalent 2N2925 equivalent 2N3404 2N3416 equivalent n3860 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

Contextual Info: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces

Contextual Info: <zSs.ml-Con.du.etoi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N442 Silicon Rectifier V(RRM)(V) Rep.Pk.Rev. Voltage=300 I(RM) Max.(A) Reverse Current=1.0u @V(R) (V)(Test Condition)=300

2N3643

Abstract: 2N3844 transistor 2N3 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390

Contextual Info: <Ss.rn.L- Conducto% ZPioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 PN4091 Type No. Case Styto BVQSS 'GSS BVQDO *'DGO (nA) 'rxoff) Vos VGS (V) @ IG <"*> @ VOQ Max (V) (V) Min 0*A) Max (V)

2N3855

Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926

Hitachi DSA00164

Contextual Info: HD74AVC16835 ] 18-bit Universal Bus Driver with 3-state Outputs ADE-205-292 Z Preliminary 1st. Edition May 1999 Description The HD74AVC16835 is a 18-bit universal bus driver is operational at 1.2 V to 3.6 V VCC, but designed specifically for 1.65 V to 3.6 V VCC operation.

2n3901 equivalent

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390

AC1F3P

Abstract: AAIF4M AD1F3P 7K10 AAIA4M AA1A4M AAIL4M AC1L2N ANIF4M M1A4
Contextual Info: - 292 - m Ta=25‘ C, *EP(ÍTc=25'C fj % H £ m VcBO Pc* IcBO (max) ( u A) M ft tt (T a = 2 5 V ) • t VcB (V) (min) (max) Vc e (V) [tEPÍátypffi i (max) (V) I c/ I e (V) / le (A) Ib (A) 50 35 100 5 0.005 0.2 0.005 0. 00025 50 0.1 0. 25 0.1 50 35 100 5

transistor k450

Contextual Info: , L/ne. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2063A Transistor, Bipolar, CE PNP Power Military/High-Rel : N V(BR)CEO (V) : 20 V(BR)CBO (V) : 40 i MAX. n U-.87S -J I(C) M a x . (A) : 5.0

2n3901 equivalent

Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN

Contextual Info: PRELIMINARY V048F020T080 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response • High density – 292 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2

2N2926

Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN

Contextual Info: PRELIMINARY V048F020T080 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response • High density – 292 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2

Contextual Info: AT25C01/02/04 Features • • • • • • • • • • Serial Peripheral Interface SPI Compatible Low Voltage and Standard Voltage Operation 5.0 V (Vcc = 4.5 V to 5.5 V) 3.0 V (Vcc = 2.7 V to 5.5 V) 2.5 V (Vcc = 2.5 V to 5.5 V) 2.0 V (Vcc = 1.8 V to 5.5 V)

r8200

Abstract: CR-M024AC4 cr-m024dc CR-M024DC4 CR-M024DC3L CR-M125DC4 R8300 CR-M230AC2 CR-M024DC2 CR-M230AC4L
Contextual Info: Pluggable interface relays CR-M Miniature relays 2CDC 293 035 F0004 Data sheet 1 2 4 3 5 Features ½ Standard miniature relays with mechanical status indication ½ 12 different supply voltages: DC versions: 12 V, 24 V, 48 V, 60 V, 110 V, 125 V, 220 V AC versions: 24 V, 48 V, 110 V, 120 V, 230 V

2N3662

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

data by 476 diode

Contextual Info: SEMIKRON SKiiP 292 GDL 170 - 476 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1700 V IGBT & Inverse Diode V cE S V c c 9> O perating DC link voltage 1200 V lc Theatsink — 25 250 A Tj 3> °C IGBT & Diode Visol 4> AC, 1 min. If = 25 °C

Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 23.6 125 113.6 Max Rating Config. Page No. NTB125N02R