V 3700 BGA Search Results

DDR3-1066

Abstract: DDR3-1333 PC3-10600 VL33B5663F
Contextual Info: Product Specifications PART NO: REV: VL33B5663F-K9M-F8M-E7M 1.1 General Information 2GB 256MX72 DDR3 SDRAM ULP ECC RDIMM 240 PIN Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

Contextual Info: Product Specifications PART NO: REV: VL33B5663F-K9M-F8M-E7M 1.1 General Information 2GB 256MX72 DDR3 SDRAM ULP ECC RDIMM 240 PIN Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

HMC1023

Abstract: circuit diagram water level sensor magnetic sensor circuit diagram circuit diagram of tilt down reverse HMC1023PCB differential magnetoresistive sensor resistive humidity temperature sensor Tilt Sensors degree 3 axis Wheatstone Bridge IRF7509
Contextual Info: HMC1023 SENSOR PRODUCTS 3-AXIS MAGNETIC SENSOR Features x x x x x x Ball Grid Array BGA Surface-Mount Package Three Orthogonal Magneto-Resistive Sensors Wide Field Range of ± 6 Gauss 1.0 mV/V/gauss Sensitivity Minimum Detectable Field to 85Pgauss

PLESSEY CLA

Abstract: gh160 FG48
Contextual Info: FEBRUARY 1996 PRELIMINARY INFORMATION DS4375-1.1 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 series is the latest family of gate arrays from GEC Plessey Semiconductors GPS . It consists of 14 fixedsize arrays with the option of building larger optimized arrays

CHARCROFT

Abstract: CSM2512 CSM3637 S102C VCS1625 VCS1625Z VHP100 VSMP0805 VSMP1206 Z201
Contextual Info: Any value at any tolerance within the standard resistance range Turnaround time in just 48 hours features: • Temperature Coefficient of Resistance TCR Absolute: ±0.05 ppm/ºC (0 ºC to +60 ºC) typical Tracking: 0.1 ppm/ºC typical • Tolerance - Absolute: ±0.001 % Match: 0.001 %

v 3700 bga

Contextual Info: SN54ALS37A, SN74ALS37A QUADRUPLE 2-INPUT POSITIVE-NAND BUFFERS SDAS195A – APRIL 1982 – REVISED DECEMBER 1994 • SN54ALS37A . . . J PACKAGE SN74ALS37A . . . D OR N PACKAGE TOP VIEW Package Options Include Plastic Small-Outline (D) Packages, Ceramic Chip

Contextual Info: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9  9/7$(' *HQHUDO ,QIRUPDWLRQ *% 0[ ''5 6'5$0 8//< %8)(5(' ',00 )%',00 (&&  3,1 'HVFULSWLRQ The VL395T5160A is a 512M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of thirty-six CMOS 256MX4 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages,

SN1176

Abstract: hy 3005-2 SA2148
Contextual Info: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9  9/7$(' *HQHUDO ,QIRUPDWLRQ *% 0[ ''5 6'5$0 8//< %8)(5(' ',00 )%',00 (&&  3,1 'HVFULSWLRQ The VL395T5160A is a 512M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of thirty-six CMOS 256MX4 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages,

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

P2QFP100-GH-1420

Abstract: O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 CLA90000 transistors for oscillators
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

USART 8251 interfacing with 8051 microcontroller

Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

microprocessors interface 8086 to 8251

Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

HYE18L256160BF-7

Abstract: intech tsop 4021 Fbga54
Contextual Info: Infineon Specialty DRAMs Mobile-RAM w w w. i n f i n e o n . c o m / m e m o r y / Mo b i l e - R A M Never stop thinking. Mobile-RAM – Extended Battery Lifetime for Handhelds A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of

soc toshiba

Abstract: 90 nm CMOS soc 1044 TC280 B707 cmos logic 90nm 90-nm CMOS standard cell library process technology toshiba transistors selection guide TOSHIBA
Contextual Info: 2003-2 PRODUCT GUIDE BCE0012A 90nm Ldrawn=70nm CMOS ASIC TC300 Family 2003 http://www.semicon.toshiba.co.jp/eng SoC Solution for a Wide Range of UltraHigh-Performance and Ultra-Low-Power Applications TC300 Family Features and Benefits Ultra-High Density and Ultra-Low Power

spansion solder profile

Abstract: D-DQ11
Contextual Info: S72XS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 1Gb 64M x 16 bit , 1.8 Volt-only, Address-High, Address-Low, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72XS-S Based MCPs Cover Sheet

2035 zilog

Abstract: zilog 2035 TC81221F set top box block diagram TX3904 QFP304 LSI ASIC MIPS R3000A toshiba semiconductor catalog TX39
Contextual Info: SYSTEM CATALOG FOR DIGITAL SET TOP BOXES Set Top Box Block Diagram Example of Digital Satellite Broadcast Set Top Box for Japanese Systems Tuner TD7627FN TA1248F F-Syn. I/Q Demo. Modem Codec TC90A48F TC90A32F QPSK System MPU TX39 Software Modem Video Encoder

TH58NVG2S3

Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
Contextual Info: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60

DRAM11

Abstract: ADVA 186-ball NOR Flash
Contextual Info: S72WS-S based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit Eclipse NOR Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72WS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: SN54HC175, SN74HC175 QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR SCLS299B – JANUARY 1996 – REVISED DECEMBER 2002 D D D D D D ±4-mA Output Drive at 5 V D Low Input Current of 1 µA Max D Applications Include: Wide Operating Voltage Range of 2 V to 6 V Outputs Can Drive Up To 10 LSTTL Loads

ahct125

Abstract: hb125 A115A SN74AHCT125PWR
Contextual Info: SN54AHCT125, SN74AHCT125 QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS SCLS264N – DECEMBER 1995 – REVISED SEPTEMBER 2002 D Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 3 12 4 11 5 10 6 9 7 8 1A 1Y 2OE 2A 2Y 14 1A

240-PIN

Abstract: DDR2-667 PC2-5300 SN13 ps3109
Contextual Info: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module

AMD Thermal Design Guide socket am3

Abstract: Phenom II X6 TEN54LSDV23GME AMD ATHLON 64 X2 AM2 pin out RADEON e2400 AMD Phenom II AMD turion 64 X2 TEN40LGAV23GME ATI E2400 E2400
Contextual Info: AMD Embedded Solutions AMD Embedded Solutions Product Selection Guide Product Selection Guide AMD EMBEDDED DISCRETE GRAPHICS AMD Geode Solutions Based Reference Design Kits • LX Ultra Value Client AMD Geode™ LX 800@0.9W2 AMD CS5536 5.5x5 CRT • •