V1411 Search Results

HDB3 matlab

Abstract: block diagram prbs generator in matlab matlab pn sequence generator HP54502A
Contextual Info: DART Device Advanced E3/DS3 Receiver/Transmitter TXC-02030 FEATURES DESCRIPTION • Single LIU for E3 and DS3 The Dual-market Advanced E3/DS3 Receiver/Transmitter DART device performs the receive and transmit line interface functions required for transmission of E3

HDB3 matlab

Abstract: block diagram prbs generator in matlab DFV S1-KHR matlab code for pn sequence generator HDB3 nrz e2 TXC-02030BILQ AN-525 GR-499-CORE JESD22-A112-A TBR24
Contextual Info: DART Device Advanced E3/DS3 Receiver/Transmitter TXC-02030 DATA SHEET DESCRIPTION • Single LIU for E3 and DS3 • Meets ‘cross-connect frame’ mask requirements • Adaptive equalization for 0 - 900 ft of cable for DS3, 0-1300 ft for E3 • Input dynamic range of 30 dB 35 mVp - 1.1Vp

V7471U

Abstract: v7471 V7271U v14431u V7470 V9431 V10511U V10271 V14112U V10621U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ■ Applicable Standards ■ Handling Precautions and Minimum Quantity / ● Large withstanding surge current capability in compact

ZNR V10471U

Abstract: znr varistor v10471u ZNR V10511U V7471U znr -v14471u V10511U V10471U V14471U V7271U V14241U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ● Large withstanding surge current capability in compact sizes ● Large “Energy Handling Capability” absorbing transient

Contextual Info: I nternational S em ico nducto r , TMV1401 thru TMV1412 in c . SILICON HYPERABRUPT TUNING DIODES .1T6 ~ r~ .1 7 0 o.s F Min 1051 4 « " h Pin 1: Anode Pin 2: Cathode l\inlng Ratio TR (CT) Civ/C,ov pF @ IV, 1M H z pF @ 2V, 1MHZ Num ber Min Nom Max Min TNI V I 401

TXC-03452B

Abstract: TXC-03452BIOG
Contextual Info: L3M Device Level 3 Mapper TXC-03452B DATA SHEET FEATURES DESCRIPTION • Maps DS3 44.736 Mbit/s or E3 (34.368 Mbit/s) line formats into SDH/SONET formats as follows: - DS3 to/from STM-1/TUG-3 - DS3 to/from STS-3/STS-1 SPE or STS-1 SPE - E3 to/from STM-1/TUG-3 only

SIGNETICS 25120

Contextual Info: L3M Device Level 3 Mapper TXC-03452B DATA SHEET DESCRIPTION FEATURES The L3M maps a DS3 line signal into an STM-1 TUG-3 or STS-3/ STS-1 SPE or STS-1 SPE SDH/SONET signal. An E3 line signal is mapped into an STM-1 TUG-3 signal only. The L3M provides a TUG-3 formatted signal for STM-1 operation, or an STS SPE for

SMV1204

Abstract: SMV1200-02 SMV1200-04 SMV1200-05 SMV1200-07 SMV1201-16 SMV1201-20 SMV1204-99 SMV1411
Contextual Info: Surface-Mounted Varactor and Multiplier Devices and Capacitors alpha IN] / SEMICONDUCTOR 4AE D 05A5443 0001334 40f l T -& 7-h *A LP Features • ■ ■ ■ ■ Description The traditional quality of Alpha varactor devices is available for volume production operations in the form of

JAN 6418

Abstract: TXC-03452B FORDAHL Frequency Control Products SIGNETICS 25120
Contextual Info: L3M Device Level 3 Mapper TXC-03452B FEATURES DESCRIPTION • Maps DS3 44.736 Mbit/s or E3 (34.368 Mbit/s) line formats into SDH/SONET formats as follows: - DS3 to/from STM-1/TUG-3 - DS3 to/from STS-3/STS-1 SPE or STS-1 SPE - E3 to/from STM-1/TUG-3 only

Contextual Info: M S I •f ^ q -j ~/ f ELECTRONICS INC 1QE 0 | SbSb4bb D0D03Sfi S | DtfDSD MORE HYPERABRUPT TUNING DIODES electronics m e. The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of

144111P

Abstract: 144110P OUT13Q T121-1 1441H C144110D
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC144110 MC144111 DIGITAL-TO-ANALOG CONVERTERS W ITH SERIAL INTERFACE CMOS LSI L O W P O W E R C O M P L E M E N T A R Y M O S I The MC14411Q and MC144111 are fo w -c o s t s ix -b it D / A c onve rters w ith serial in terface po rts to provid e co m m u n ic a tio n w ith CM OS

Contextual Info: I n ter n a tio n a l MV1401 S e m ic o n d u c to r , I n c . thru HYPERABRUPT TUNING DIODES MV1412 10 TO 550 pF ELECTRICAL CHARACTERISTICS /'CHARACTERISTICS - 1 25 °C unless o th e rw is e specified TEST CONDITIONS M in. ALL TYPES M ax. U nit - vd c 0 .0 0 1

ade 633

Abstract: MV1401 MV1402 MV1403 MV1406 MV1407
Contextual Info: \Æ MORE HYPERABRUPT TUNING DIODES electronics The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tu ning applications. Their large values of nom inal capacitance are for A M applications w ith the low er capacitance

Contextual Info: M SI BSE D ELECTRONICS INC electronics E3 SbSbMbb □□□□363 4 B3MSI MORE HYPERABRUPT TUNING DIODES me The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nominal capacitance are for A M applications with the lower capacitance

V14112

Abstract: temperature controller using microprocessor K9127
Contextual Info: L3M Device Level 3 Mapper TXC-03452B DATA SHEET FEATURES DESCRIPTION • Maps DS3 44.736 Mbit/s or E3 (34.368 Mbit/s) line formats into SDH/SONET formats as follows: - DS3 to/from STM-1/TUG-3 - DS3 to/from STS-3/STS-1 SPE or STS-1 SPE - E3 to/from STM-1/TUG-3 only

Contextual Info: tmän S w it c h x- „ L3M Device Level 3 Mapper TXC-03452B DATA SHEET FEATURES DESCRIPTION ^ • Maps DS3 44.736 Mbit/s or E3 (34.368 Mbit/s) line formats into S D H /S O N E T formats as follows: - DS3 to/from STM-1/TUG-3 - DS3 to/from STS-3/STS-1 S P E or STS-1 S P E

SMD 236 DIODE

Contextual Info: K n o x S e m ic o n d u c t o r , I n c SILICON HYPERABRUPT TUNING DIODES The SMV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large number of broadband applications thru the

V1408

Abstract: V1406 v1402
Contextual Info: INTERNATIONAL SEMICONDUCTOR INC. , 1MV1401 thru SURFACE MOUNT HYPERABRUPT TUNING DIODES 1MV1412 10 TO 550 pF ELECTRICAL CHARACTERISTICS /C H A R A C T ER IST IC S A LL TYPES = T* 2 5 °C u n l e s s o t h e r w is e s p e c if ie d TEST C O N D IT IO N S Min.