VB40170C Search Results
VB40170C Price and Stock
Vishay Semiconductors VB40170C-E3-8WDIODE ARR SCHOT 170V 20A TO263AB |
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VB40170C-E3-8W | Cut Tape | 7,670 | 1 |
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Vishay Semiconductors VB40170C-M3-IDIODE ARR SCHOT 170V 20A TO263AB |
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VB40170C-M3-I | Reel | 8,000 |
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Vishay Semiconductors VB40170C-E3-4WDIODE ARR SCHOT 170V 20A TO263AB |
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VB40170C-E3-4W | Tube | 8,000 |
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Vishay Intertechnologies VB40170C-E3/8W40A,170V,TRENCH SKY RECT. - Tape and Reel (Alt: VB40170C-E3/8W) |
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VB40170C-E3/8W | Reel | 7 Weeks | 8,000 |
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VB40170C-E3/8W | 7,498 |
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VB40170C-E3/8W | Reel | 8,000 |
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VB40170C-E3/8W | 8 Weeks | 800 |
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Vishay Intertechnologies VB40170C-M3/I40A, 170V, TO-263, TRENCH SKY RECT. - Tape and Reel (Alt: VB40170C-M3/I) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VB40170C-M3/I | Reel | 7 Weeks | 8,000 |
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VB40170C-M3/I |
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VB40170C-M3/I | Bulk | 8,000 |
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VB40170C-M3/I | Reel | 8,000 |
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VB40170C Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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VB40170C-E3/8W | Vishay Semiconductors | Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 170V 20A TO263AB | Original | 4 | ||||
VB40170CHM3/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 170V TO263 | Original | 99.71KB | ||||
VB40170C-M3/I | Vishay Semiconductors | 40A 170V TO-263 TRENCH SKY RECT | Original | 96.61KB |
VB40170C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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VB40170CContextual Info: VB40170C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VB40170C-E3 O-263AB VB40170C J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VB40170C | |
VB40170CContextual Info: VB40170C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VB40170C O-263AB J-STD-020, 17trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VB40170C | |
VB40170CContextual Info: VB40170C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VB40170C O-263AB J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VB40170C | |
VB40170CContextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . RECTIFIERS 170 V TMBS Rectifiers 170 V TMBS® Rectifiers in Power TO-220AB, TO-263AB, and TO-3PW Packages KEY BENEFITS • • • • • • Current ratings from 10 A to 80 A Low forward voltage drops down to 0.65 V typical at 30 A |
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O-220AB, O-263AB, VMN-PT0340-1411 VB40170C |