VBE 10V Search Results

CMPT6517

Abstract: CMPT6520
Contextual Info: Central TM Semiconductor Corp. 315 R3 28-Mar 2001 SYMBOL VBE (SAT) TEST CONDITIONS IC=30mA, IB=3.0mA MIN MAX 0.90 UNITS V 2.0 V VBE (ON) hFE VCE=10V, IC=100mA VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA VCE=10V, IC=30mA 30 30 200 VCE=10V, IC=50mA VCE=10V, IC=100mA

MPSH10P

Abstract: DSA003760
Contextual Info: MPSH10P 1.0 VCE=-10V VCE=-10V 175°C -55°C 0.8 100 VBE - Volts hFE -Gain 150 100°C 25°C 0.6 25°C 100°C 0.4 175°C -55°C 50 0.1 1 10 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1000 10 100 500 0.1 1 10 100 E-Line TO92 Compatible

2N4400

Contextual Info: i TOSHIBA SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SUITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current : ICEV^'lOOnAiMax.), lBEV= 100nA(Max.) <? VCe =-35V, VBE=0.4V

ZTX957

Abstract: TO-1 amps pnp transistor DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio

Contextual Info: DISCONTINUED FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time

BC858C

Abstract: 65 marking sot23
Contextual Info: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V

Harris CA3046

Abstract: an5296 d143 T transistor CA3045 HARRIS AN5296 application note ca3046 CA3046 equivalent CA3045 CA3045F CA3046 Harris
Contextual Info: CA3045, CA3046 S E M I C O N D U C T O R General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA Max

FMMT2907

Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
Contextual Info: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0

MPS2907A

Contextual Info: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns

FXT2907A

Contextual Info: FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time ton 50 ns

BC858C

Abstract: 2KW sot23
Contextual Info: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP transistors. Package Outline Details Pin Configuration 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Absolute Maximum Ratings - Symbol Collector–emitter voltage +VBE = 1V

LM394BN

Abstract: SSM2210P SMM210 OP-97 SSM-2210 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance
Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX • Excellent Current Gain Match.0.5% TYP • Tight VBE Match VQS . 200^V MAX

Contextual Info: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity

ZTX849

Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward Current Transfer Ratio

Contextual Info: SPICE MODEL: DMMT3906W DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package SOT-363 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)

YTS3904

Contextual Info: TO SHIBA YTS3904 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqev = 50nA Max. , Ibev = 50nA (Max.) - @ VCE = 30V, VBE = 3V • Excellent DC Current Gain Linearity

MARKING k4a

Contextual Info: SPICE MODEL: DMMT3904W DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Intrinsically Matched NPN Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

BC547 smd

Abstract: BC547B SMD BC547 BC546 smd BC548 smd BC546B BC547C BC547b smd hie for bc547b BC547 smd package
Contextual Info: BC546 BC547 BC548 NPN Silicon Planar Epitaxial Transistors 1 2 3 TO-92 SMD Package Absolute Maximum Ratings Ta = 25 oC unless specified otherwise DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage

ZTX958

Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo

ZTX949

Abstract: DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* Static Forward Current Transfer Ratio

ztx953

Abstract: IN 3319 B DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*

DMMT3906W

Abstract: DMMT3906W-7 J-STD-020A
Contextual Info: DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)

ZTX955

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio