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    VBE 8 V Search Results

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    VBE 8 V Price and Stock

    Samtec Inc HLE-108-02-G-DV-BE-K-TR

    Headers & Wire Housings Cost-Effective Reliable Socket, .100" (2.54 mm) Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HLE-108-02-G-DV-BE-K-TR 760
    • 1 $3.53
    • 10 $3.53
    • 100 $2.71
    • 1000 $2.42
    • 10000 $2.3
    		Buy Now

    Samtec Inc HLE-108-02-F-DV-BE

    Headers & Wire Housings Cost-Effective Reliable Socket, .100" (2.54 mm) Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HLE-108-02-F-DV-BE 83
    • 1 $3.74
    • 10 $3.74
    • 100 $3.05
    • 1000 $2.3
    • 10000 $1.09
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    NXP Semiconductors KITPF0100SKTEVBE

    Sockets & Adapters Evaluation Board - MMPF0100, OTP Programming Socket for the PF Family of PMIC Devices
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KITPF0100SKTEVBE 18
    • 1 $200.59
    • 10 $200.59
    • 100 $200.59
    • 1000 $200.59
    • 10000 $200.59
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    NXP Semiconductors KITPF0100EPEVBE

    Power Management IC Development Tools MMPF0100 Eval Boar
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KITPF0100EPEVBE 8
    • 1 $588.1
    • 10 $588.1
    • 100 $588.1
    • 1000 $588.1
    • 10000 $588.1
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    Lattice Semiconductor Corporation LC4256V-B-EVN

    Programmable Logic IC Development Tools ispMACH4256V Breakout Board
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LC4256V-B-EVN 5
    • 1 $198.06
    • 10 $198.06
    • 100 $198.06
    • 1000 $198.06
    • 10000 $198.06
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    Find more VBE 8 V price and stock on Findchips.com

    VBE 8 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CSA 70

    Abstract: No abstract text available
    Text: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1


    Original     		PDF 20-20NO1 VUE30-20NO1 D-68623 CSA 70

    FMMT2907

    Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
    Text: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0


    Original     		PDF FZT2907 FZT2907A FMMT2907 FMMT2907A 100KHz -150mA, -15mA -150mA FMMT2907 FMMT2907A FZT2907 FZT2907A DSA003709

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time


    Original     		PDF FXT2907A 100KHz -150mA -15mA -150mA, 200ns -15mA*

    MPS2907A

    Abstract: No abstract text available
    Text: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns


    Original     		PDF MPS2907A 100KHz -150mA -15mA -150mA, -15mA* MPS2907A

    FXT2907A

    Abstract: No abstract text available
    Text: FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time ton 50 ns


    Original     		PDF FXT2907A 100KHz -150mA -15mA -150mA, 200ns -15mA* FXT2907A

    2SC3835

    Abstract: DSA0016507
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max


    Original     		PDF 2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2SC3835 DSA0016507

    2SC3834

    Abstract: transistor 1022
    Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC3834 100max 120min Pulse14) 30typ 110typ MT-25 2SC3834 transistor 1022

    Untitled

    Abstract: No abstract text available
    Text: -10 -50 VCE=-6V Ta=100˚C 25˚C -40˚C -20 -35.0 Ta=25˚C -31.5 -28.0 -8 -10 -24.5 IC mA IC (mA) -5 -2 -1 -21.0 -6 -17.5 -14.0 -4 -10.5 -0.5 -7.0 -2 -3.5mA -0.2 -0.1 IB=0 -0.4 -0.2 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.8 -0.4 -1.2 -1.6 -2.0 VCE (V) VBE (V) 500


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 50 10 VCE=6V 20 8 5 IC mA IC (mA) 10 2 6 4 1 0.5 2 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4 8 VBE (V) 12 16 20 VCE (V) 500 500 VCE = 5V 3V 1V 200 200 100 hFE hFE 100 50 50 20 20 10 0.2 0.5 1 2 5 10 20 50 100 10 0.2 200 0.5 1 2 IC (mA) 5 10 20 50 100 200


    Original     		PDF

    2-21F1A

    Abstract: No abstract text available
    Text: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03


    Original     		PDF 2-21F1A 2-21F1A

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


    Original     		PDF 2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    FZT951

    Abstract: FZT953 fzt853 FZT851 DSA003718
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718

    TIS84

    Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
    Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125


    Original     		PDF TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763

    2N5154

    Abstract: No abstract text available
    Text: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )


    Original     		PDF 2N5152 2N5154 2N5154 2N5151 2N5153 20MHz 300ms

    Untitled

    Abstract: No abstract text available
    Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF BUX33A BUX33B BUX33 300ms,

    npn 1000V 15A

    Abstract: BUX33 transistor VCE 1000V vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor VCEO 1000V BUX33A BUX33B
    Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF BUX33A BUX33B BUX33 300ms, npn 1000V 15A transistor VCE 1000V vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor VCEO 1000V BUX33A BUX33B

    2n6259

    Abstract: 2n4348
    Text: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS Ic 25*C BVcbo BVceo BVebo A V V V Watts hrE @ <5 MIN MAX Ic A VCE V Sat Test Voltages Conditions Ib VcE Vbe Ic I ebo V A V A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7 10 15 60


    OCR Scan     		PDF 2N3773 2N4348 2N6259 TWX-510-224-6582 T0-58 O-114 00435c 2n6259 2n4348

    VQE 23 E

    Abstract: VQE 23 F
    Text: euoec BSM 200 GA 170 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on,min = 6-8 Ohm Type VbE Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67


    OCR Scan     		PDF C67070-A2705-A67 C67070-A2707-A67 Oct-27-1997 VQE 23 E VQE 23 F

    PN4250

    Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
    Text: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »


    OCR Scan     		PDF bSD1130 0035M4E PN4250 2N4248 2N4288 2N4249 2N4250A 2N4250

    AX2200

    Abstract: Semikron sk 100 dal
    Text: se MIKRQN Maximum Ratings Symbol Values Units lc = 1 A, V b e = - 2 V 1200 V Vbe = - 2 V 1200 V 1200 V Conditions VcEVsus lc = 0 7 V lc D. C. 150 A tp = 1 m s 300 A If = - l c 150 A Ib 8 A 1000 W Tv] - 4 0 , . . + 150 °C Tstg - 4 0 . . . + 125 °c 2500- V


    OCR Scan     		PDF

    2N2067

    Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
    Text: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE


    OCR Scan     		PDF 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B 2N1183 Ind50-100/3/2 2N1541S 2N15425 2N2067 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1184A

    NPN Power Darlington Modules

    Abstract: No abstract text available
    Text: s e MIKRDn Maxim um Ratings Sym bol C onditions Values Units lc = 1 A, Vbe = - 2 V 1000 V VCEV V be = - 2 V 1000 \n VcBO Ie = 0 1000 V V ebo lc = 0 7 V lc D. C. 150 A tp = 1 ms 300 VcEVsus ICM Ib Tease = 2 5 °C Ptot I- A 8 A 1000 W Tvj - 4 0 . . . + 150 °C


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b S b l4tìlì3 G O D D O S l 725 M N E S I max = 0 .0 5 to lO A V ceo(sus) = 4 0 -8 0 0 V fi = 1 to 5 0 MHz NPN TO-39/TO-5 Case 801 T -3 3 ~ o ( VCE (SAT) @ IC/ lB ( V A/A) VBE (SAT) @ |C/lB (V ® A/A)


    OCR Scan     		PDF 2N1479 2N1480 2N1481 2N1482 2N5729 2N5784 2N5785 2N5786